Doping concentration dependence of ferromagnetic ordering in (Ga,Mn)N nanowires

Moon Ho Ham, Jae Min Myoung

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16 Citations (Scopus)


The (Ga,Mn)N nanowires with different Mn concentrations of 0.5%-10% were synthesized by varying the separation between Mn Cl2 and GaN powders under N H3 gas flow via the chemical vapor deposition method. The structural analyses demonstrate that all the nanowires are a single crystal without secondary phases. The room-temperature ferromagnetism was found to depend on Mn concentration in the (Ga,Mn)N nanowires which were converted from n type to p type with increasing Mn concentration. In particular, the highest magnetic moment was shown in the p -type (Ga,Mn)N nanowires with Mn concentration of 5% and hole concentration of 1017 cm-3.

Original languageEnglish
Article number173117
JournalApplied Physics Letters
Issue number17
Publication statusPublished - 2006 Nov 6

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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