Doping concentration dependence of ferromagnetic ordering in (Ga,Mn)N nanowires

Moon Ho Ham; Jae Min Myoung

doi:10.1063/1.2364882

Doping concentration dependence of ferromagnetic ordering in (Ga,Mn)N nanowires

Moon Ho Ham, Jae Min Myoung

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

The (Ga,Mn)N nanowires with different Mn concentrations of 0.5%-10% were synthesized by varying the separation between Mn Cl2 and GaN powders under N H3 gas flow via the chemical vapor deposition method. The structural analyses demonstrate that all the nanowires are a single crystal without secondary phases. The room-temperature ferromagnetism was found to depend on Mn concentration in the (Ga,Mn)N nanowires which were converted from n type to p type with increasing Mn concentration. In particular, the highest magnetic moment was shown in the p -type (Ga,Mn)N nanowires with Mn concentration of 5% and hole concentration of 1017 cm-3.

Original language	English
Article number	173117
Journal	Applied Physics Letters
Volume	89
Issue number	17
DOIs	https://doi.org/10.1063/1.2364882
Publication status	Published - 2006

Bibliographical note

Funding Information:
This work was supported by National R&D Project for Nano Science and Technology. The authors are grateful to D. K. Oh at the Korea Basic Science Institute for his assistance with the SQUID magnetometer.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2364882

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abstract = "The (Ga,Mn)N nanowires with different Mn concentrations of 0.5%-10% were synthesized by varying the separation between Mn Cl2 and GaN powders under N H3 gas flow via the chemical vapor deposition method. The structural analyses demonstrate that all the nanowires are a single crystal without secondary phases. The room-temperature ferromagnetism was found to depend on Mn concentration in the (Ga,Mn)N nanowires which were converted from n type to p type with increasing Mn concentration. In particular, the highest magnetic moment was shown in the p -type (Ga,Mn)N nanowires with Mn concentration of 5% and hole concentration of 1017 cm-3.",

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AB - The (Ga,Mn)N nanowires with different Mn concentrations of 0.5%-10% were synthesized by varying the separation between Mn Cl2 and GaN powders under N H3 gas flow via the chemical vapor deposition method. The structural analyses demonstrate that all the nanowires are a single crystal without secondary phases. The room-temperature ferromagnetism was found to depend on Mn concentration in the (Ga,Mn)N nanowires which were converted from n type to p type with increasing Mn concentration. In particular, the highest magnetic moment was shown in the p -type (Ga,Mn)N nanowires with Mn concentration of 5% and hole concentration of 1017 cm-3.

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