Abstract
The (Ga,Mn)N nanowires with different Mn concentrations of 0.5%-10% were synthesized by varying the separation between Mn Cl2 and GaN powders under N H3 gas flow via the chemical vapor deposition method. The structural analyses demonstrate that all the nanowires are a single crystal without secondary phases. The room-temperature ferromagnetism was found to depend on Mn concentration in the (Ga,Mn)N nanowires which were converted from n type to p type with increasing Mn concentration. In particular, the highest magnetic moment was shown in the p -type (Ga,Mn)N nanowires with Mn concentration of 5% and hole concentration of 1017 cm-3.
| Original language | English |
|---|---|
| Article number | 173117 |
| Journal | Applied Physics Letters |
| Volume | 89 |
| Issue number | 17 |
| DOIs | |
| Publication status | Published - 2006 Nov 6 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Ham, M. H., & Myoung, J. M. (2006). Doping concentration dependence of ferromagnetic ordering in (Ga,Mn)N nanowires. Applied Physics Letters, 89(17), [173117]. https://doi.org/10.1063/1.2364882