Reducing computational complexity is essential in future computing systems for processing a large amount of unstructured data simultaneously. Dot-product operations using crossbar array devices have attracted considerable attention owing to their simple device structure, intuitive operation scheme, and high computational efficiency of parallel operation. The resistive switching device is considered a promising candidate as the main data storage in the crossbar array owing to its highly reliable performance. In this study, a tri-layer TaOx/Al2O3/Ti:SiOx-based resistive switching device is proposed. The proposed device exhibits a high electrical selectivity of 2.5 × 105 based on the optimized biasing scheme, a stable non-volatility, and reliable read disturbance characteristic of up to 108. Additionally, the device achieves high reading current of 1 µA and a low off-leakage current of 1 pA, which favors the reliable characteristics in the data writing sequence and the dot-product operation in the crossbar array device. Furthermore, the resistive switching mechanism based on the material and electrical conduction characteristics is analyzed. Lastly, the dot-product operation in an 8 × 8 crossbar array is performed. As a result, the calculated and measured signal values in each column in the crossbar array of the device are found to be in good agreement.
|Journal||Advanced Materials Interfaces|
|Publication status||Published - 2022 Jul 12|
Bibliographical noteFunding Information:
This research was supported by the Ministry of Trade, Industry & Energy (Grant No. 20012002), and the Korea Semiconductor Research Consortium program for the development of future semiconductor devices. This work was partly supported by a grant from the Korea Research Institute of Chemical Technology (Grant No. SS2221‐10; Development of Smart Chemical Materials for IoT Devices).
© 2022 Wiley-VCH GmbH.
All Science Journal Classification (ASJC) codes
- Mechanics of Materials
- Mechanical Engineering