Double boosting pump, hybrid current sense amplifier, and binary weighted temperature sensor adjustment schemes for 1.8V 128Mb mobile DRAMs

Jae Yoon Sim, Hongil Yoon, Ki Chul Chun, Hyun Seok Lee, Sang Pyo Hong, Soo Young Kim, Min Soo Kim, Kyu Chan Lee, Jei Hwan Yoo, Dong Il Seo, Soo In Cho

Research output: Contribution to conferencePaper

9 Citations (Scopus)

Abstract

A 1.8V 128Mb SDRAM is implemented for low current mobile applications with a 0.15μm technology. The double boosting pump and hybrid current sense amplifier schemes are optimized for the low voltage regime with high pumping efficiency and stable I-to-V gain, respectively. A Temperature sensor together with the binary weighted adjustment technique allow a very accurate implementation without loss in productivity.

Original languageEnglish
Pages294-297
Number of pages4
Publication statusPublished - 2002
Event2002 Symposium on VLSI Circuits Digest of Technical Papers - Honolulu, HI, United States
Duration: 2002 Jun 132002 Jun 15

Other

Other2002 Symposium on VLSI Circuits Digest of Technical Papers
CountryUnited States
CityHonolulu, HI
Period02/6/1302/6/15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Sim, J. Y., Yoon, H., Chun, K. C., Lee, H. S., Hong, S. P., Kim, S. Y., Kim, M. S., Lee, K. C., Yoo, J. H., Seo, D. I., & Cho, S. I. (2002). Double boosting pump, hybrid current sense amplifier, and binary weighted temperature sensor adjustment schemes for 1.8V 128Mb mobile DRAMs. 294-297. Paper presented at 2002 Symposium on VLSI Circuits Digest of Technical Papers, Honolulu, HI, United States.