Double Negative Differential Resistance Device Based on Hafnium Disulfide/Pentacene Hybrid Structure

Kil Su Jung; Keun Heo; Min Je Kim; Maksim Andreev; Seunghwan Seo; Jin Ok Kim; Ji Hye Lim; Kwan Ho Kim; Sungho Kim; Ki Seok Kim; Geun Yong Yeom; Jeong Ho Cho; Jin Hong Park

doi:10.1002/advs.202000991

Double Negative Differential Resistance Device Based on Hafnium Disulfide/Pentacene Hybrid Structure

Kil Su Jung, Keun Heo, Min Je Kim, Maksim Andreev, Seunghwan Seo, Jin Ok Kim, Ji Hye Lim, Kwan Ho Kim, Sungho Kim, Ki Seok Kim, Geun Yong Yeom, Jeong Ho Cho, Jin Hong Park

Department of Chemical and Biomolecular Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Recently, combinations of 2D van der Waals (2D vdW) materials and organic materials have attracted attention because they facilitate the formation of various heterojunctions with excellent interface quality owing to the absence of dangling bonds on their surface. In this work, a double negative differential resistance (D-NDR) characteristic of a hybrid 2D vdW/organic tunneling device consisting of a hafnium disulfide/pentacene heterojunction and a 3D pentacene resistor is reported. This D-NDR phenomenon is achieved by precisely controlling an NDR peak voltage with the pentacene resistor and then integrating two distinct NDR devices in parallel. Then, the operation of a controllable-gain amplifier configured with the D-NDR device and an n-channel transistor is demonstrated using the Cadence Spectre simulation platform. The proposed D-NDR device technology based on a hybrid 2D vdW/organic heterostructure provides a scientific foundation for various circuit applications that require the NDR phenomenon.

Original language	English
Article number	2000991
Journal	Advanced Science
Volume	7
Issue number	19
DOIs	https://doi.org/10.1002/advs.202000991
Publication status	Published - 2020 Oct 1

Bibliographical note

Funding Information:
K.‐S.J. and K.H. contributed equally to this work. This research was supported by the Basic Science Research Program, Basic Research Lab Program, and Nano‐Material Technology Development Program through National Research Foundation of Korea (NRF) grants funded by the Korea government (MSIP) (Grant Nos. 2020R1A4A2002806, 2019M3F3A1A01074451, 2018R1A2A2A05020475, and 2016M3A7B4910426), and the Future Semiconductor Device Technology Development Program (10067739) funded by Ministry of Trade, Industry and Energy (MOTIE), and Korea Semiconductor Research Consortium (KSRC).

Publisher Copyright:
© 2020 The Authors. Published by Wiley-VCH GmbH

All Science Journal Classification (ASJC) codes

Medicine (miscellaneous)
Chemical Engineering(all)
Materials Science(all)
Biochemistry, Genetics and Molecular Biology (miscellaneous)
Engineering(all)
Physics and Astronomy(all)

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10.1002/advs.202000991

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@article{4386f605f1c243e4a2d69744f5ea29f4,

title = "Double Negative Differential Resistance Device Based on Hafnium Disulfide/Pentacene Hybrid Structure",

abstract = "Recently, combinations of 2D van der Waals (2D vdW) materials and organic materials have attracted attention because they facilitate the formation of various heterojunctions with excellent interface quality owing to the absence of dangling bonds on their surface. In this work, a double negative differential resistance (D-NDR) characteristic of a hybrid 2D vdW/organic tunneling device consisting of a hafnium disulfide/pentacene heterojunction and a 3D pentacene resistor is reported. This D-NDR phenomenon is achieved by precisely controlling an NDR peak voltage with the pentacene resistor and then integrating two distinct NDR devices in parallel. Then, the operation of a controllable-gain amplifier configured with the D-NDR device and an n-channel transistor is demonstrated using the Cadence Spectre simulation platform. The proposed D-NDR device technology based on a hybrid 2D vdW/organic heterostructure provides a scientific foundation for various circuit applications that require the NDR phenomenon.",

author = "Jung, {Kil Su} and Keun Heo and Kim, {Min Je} and Maksim Andreev and Seunghwan Seo and Kim, {Jin Ok} and Lim, {Ji Hye} and Kim, {Kwan Ho} and Sungho Kim and Kim, {Ki Seok} and Yeom, {Geun Yong} and Cho, {Jeong Ho} and Park, {Jin Hong}",

note = "Funding Information: K.‐S.J. and K.H. contributed equally to this work. This research was supported by the Basic Science Research Program, Basic Research Lab Program, and Nano‐Material Technology Development Program through National Research Foundation of Korea (NRF) grants funded by the Korea government (MSIP) (Grant Nos. 2020R1A4A2002806, 2019M3F3A1A01074451, 2018R1A2A2A05020475, and 2016M3A7B4910426), and the Future Semiconductor Device Technology Development Program (10067739) funded by Ministry of Trade, Industry and Energy (MOTIE), and Korea Semiconductor Research Consortium (KSRC). Publisher Copyright: {\textcopyright} 2020 The Authors. Published by Wiley-VCH GmbH",

year = "2020",

month = oct,

day = "1",

doi = "10.1002/advs.202000991",

language = "English",

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Double Negative Differential Resistance Device Based on Hafnium Disulfide/Pentacene Hybrid Structure. / Jung, Kil Su; Heo, Keun; Kim, Min Je; Andreev, Maksim; Seo, Seunghwan; Kim, Jin Ok; Lim, Ji Hye; Kim, Kwan Ho; Kim, Sungho; Kim, Ki Seok; Yeom, Geun Yong; Cho, Jeong Ho; Park, Jin Hong.

In: Advanced Science, Vol. 7, No. 19, 2000991, 01.10.2020.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Double Negative Differential Resistance Device Based on Hafnium Disulfide/Pentacene Hybrid Structure

AU - Jung, Kil Su

AU - Heo, Keun

AU - Kim, Min Je

AU - Andreev, Maksim

AU - Seo, Seunghwan

AU - Kim, Jin Ok

AU - Lim, Ji Hye

AU - Kim, Kwan Ho

AU - Kim, Sungho

AU - Kim, Ki Seok

AU - Yeom, Geun Yong

AU - Cho, Jeong Ho

AU - Park, Jin Hong

N1 - Funding Information: K.‐S.J. and K.H. contributed equally to this work. This research was supported by the Basic Science Research Program, Basic Research Lab Program, and Nano‐Material Technology Development Program through National Research Foundation of Korea (NRF) grants funded by the Korea government (MSIP) (Grant Nos. 2020R1A4A2002806, 2019M3F3A1A01074451, 2018R1A2A2A05020475, and 2016M3A7B4910426), and the Future Semiconductor Device Technology Development Program (10067739) funded by Ministry of Trade, Industry and Energy (MOTIE), and Korea Semiconductor Research Consortium (KSRC). Publisher Copyright: © 2020 The Authors. Published by Wiley-VCH GmbH

PY - 2020/10/1

Y1 - 2020/10/1

N2 - Recently, combinations of 2D van der Waals (2D vdW) materials and organic materials have attracted attention because they facilitate the formation of various heterojunctions with excellent interface quality owing to the absence of dangling bonds on their surface. In this work, a double negative differential resistance (D-NDR) characteristic of a hybrid 2D vdW/organic tunneling device consisting of a hafnium disulfide/pentacene heterojunction and a 3D pentacene resistor is reported. This D-NDR phenomenon is achieved by precisely controlling an NDR peak voltage with the pentacene resistor and then integrating two distinct NDR devices in parallel. Then, the operation of a controllable-gain amplifier configured with the D-NDR device and an n-channel transistor is demonstrated using the Cadence Spectre simulation platform. The proposed D-NDR device technology based on a hybrid 2D vdW/organic heterostructure provides a scientific foundation for various circuit applications that require the NDR phenomenon.

AB - Recently, combinations of 2D van der Waals (2D vdW) materials and organic materials have attracted attention because they facilitate the formation of various heterojunctions with excellent interface quality owing to the absence of dangling bonds on their surface. In this work, a double negative differential resistance (D-NDR) characteristic of a hybrid 2D vdW/organic tunneling device consisting of a hafnium disulfide/pentacene heterojunction and a 3D pentacene resistor is reported. This D-NDR phenomenon is achieved by precisely controlling an NDR peak voltage with the pentacene resistor and then integrating two distinct NDR devices in parallel. Then, the operation of a controllable-gain amplifier configured with the D-NDR device and an n-channel transistor is demonstrated using the Cadence Spectre simulation platform. The proposed D-NDR device technology based on a hybrid 2D vdW/organic heterostructure provides a scientific foundation for various circuit applications that require the NDR phenomenon.

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DO - 10.1002/advs.202000991

M3 - Article

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VL - 7

JO - Advanced Science

JF - Advanced Science

SN - 2198-3844

IS - 19

M1 - 2000991

ER -

Double Negative Differential Resistance Device Based on Hafnium Disulfide/Pentacene Hybrid Structure

Abstract

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