Dramatic change of electrical properties in La-Ba-Mn-O thin films prepared using bias sputtering

Jong Cheol Lee, Sang Yub Le, Seung Lel Park, Yeonjin Yi, Gyu In Jang, Ho Shik Song, Dong Gyun You, Kwangho Jeong

Research output: Contribution to journalArticle

Abstract

Bias sputtering was employed to reduce the bombardment to the growing film by negative metal oxide ions or negative oxygen ions. Polycrystalline La-Ba-Mn-O thin films were grown using rf magnetron sputtering on Si (100) substrates. The temperature dependence of electrical resistivity was shown for films with grounded or negatively biased substrate.

Original languageEnglish
Pages (from-to)2115-2118
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume20
Issue number6
DOIs
Publication statusPublished - 2002 Nov 1

Fingerprint

Sputtering
Electric properties
sputtering
electrical properties
Ions
Thin films
Film growth
Substrates
thin films
oxygen ions
negative ions
Magnetron sputtering
Oxides
metal oxides
bombardment
magnetron sputtering
Metals
Oxygen
temperature dependence
electrical resistivity

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Lee, Jong Cheol ; Le, Sang Yub ; Park, Seung Lel ; Yi, Yeonjin ; Jang, Gyu In ; Song, Ho Shik ; You, Dong Gyun ; Jeong, Kwangho. / Dramatic change of electrical properties in La-Ba-Mn-O thin films prepared using bias sputtering. In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 2002 ; Vol. 20, No. 6. pp. 2115-2118.
@article{27f22fbd8d764e9a825523f0a70c9161,
title = "Dramatic change of electrical properties in La-Ba-Mn-O thin films prepared using bias sputtering",
abstract = "Bias sputtering was employed to reduce the bombardment to the growing film by negative metal oxide ions or negative oxygen ions. Polycrystalline La-Ba-Mn-O thin films were grown using rf magnetron sputtering on Si (100) substrates. The temperature dependence of electrical resistivity was shown for films with grounded or negatively biased substrate.",
author = "Lee, {Jong Cheol} and Le, {Sang Yub} and Park, {Seung Lel} and Yeonjin Yi and Jang, {Gyu In} and Song, {Ho Shik} and You, {Dong Gyun} and Kwangho Jeong",
year = "2002",
month = "11",
day = "1",
doi = "10.1116/1.1519866",
language = "English",
volume = "20",
pages = "2115--2118",
journal = "Journal of Vacuum Science and Technology A",
issn = "0734-2101",
publisher = "AVS Science and Technology Society",
number = "6",

}

Dramatic change of electrical properties in La-Ba-Mn-O thin films prepared using bias sputtering. / Lee, Jong Cheol; Le, Sang Yub; Park, Seung Lel; Yi, Yeonjin; Jang, Gyu In; Song, Ho Shik; You, Dong Gyun; Jeong, Kwangho.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 20, No. 6, 01.11.2002, p. 2115-2118.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Dramatic change of electrical properties in La-Ba-Mn-O thin films prepared using bias sputtering

AU - Lee, Jong Cheol

AU - Le, Sang Yub

AU - Park, Seung Lel

AU - Yi, Yeonjin

AU - Jang, Gyu In

AU - Song, Ho Shik

AU - You, Dong Gyun

AU - Jeong, Kwangho

PY - 2002/11/1

Y1 - 2002/11/1

N2 - Bias sputtering was employed to reduce the bombardment to the growing film by negative metal oxide ions or negative oxygen ions. Polycrystalline La-Ba-Mn-O thin films were grown using rf magnetron sputtering on Si (100) substrates. The temperature dependence of electrical resistivity was shown for films with grounded or negatively biased substrate.

AB - Bias sputtering was employed to reduce the bombardment to the growing film by negative metal oxide ions or negative oxygen ions. Polycrystalline La-Ba-Mn-O thin films were grown using rf magnetron sputtering on Si (100) substrates. The temperature dependence of electrical resistivity was shown for films with grounded or negatively biased substrate.

UR - http://www.scopus.com/inward/record.url?scp=0036864417&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036864417&partnerID=8YFLogxK

U2 - 10.1116/1.1519866

DO - 10.1116/1.1519866

M3 - Article

VL - 20

SP - 2115

EP - 2118

JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

SN - 0734-2101

IS - 6

ER -