Drastic improvement of oxide thermoelectric performance using thermal and plasma treatments of the InGaZnO thin films grown by sputtering

Dong Kyu Seo, Sangwoo Shin, Hyung Hee Cho, Bo Hyun Kong, Dong Mok Whang, Hyung Koun Cho

Research output: Contribution to journalArticle

59 Citations (Scopus)

Abstract

Single-crystal InGaO3(ZnO)m thin films with periodic superlattice structures suitable for transparent thermoelectric applications were fabricated using a commercially available c-plane sapphire substrate, an epitaxial ZnO buffer layer, a thermal treatment at 900 °C, and an Ar plasma treatment. The introduction of the epitaxial ZnO buffer layer led to a significant reduction in the lattice mismatch at the interface with the InGaO3(ZnO)m films. The sandwich structure of the ZnO/InGaZnO/ZnO resulted in an increase in the ZnO content in the superlattice InGaO3(ZnO)m thin films. With respect to thermoelectric properties, the formation of a perfect, layered structure induced an increase in the Seebeck coefficient and, at the same time, a decrease in the thermal conductivity. After complete crystallization, the Ar plasma treatment resulted in a considerable decrease in the electrical resistivity without microstructural changes and without a large decrease in the thermal conductivity. As a result, the thermoelectric properties using n-type oxide semiconductors were dramatically improved.

Original languageEnglish
Pages (from-to)6743-6750
Number of pages8
JournalActa Materialia
Volume59
Issue number17
DOIs
Publication statusPublished - 2011 Oct

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Polymers and Plastics
  • Metals and Alloys

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