We investigated a method to simultaneously improve the mobility and reliability of solution-processed zinc tin oxide thin film transistors (ZTO TFTs) using a dual-functional potassium superoxide precursor. Potassium cations in the potassium superoxide (KO 2 ) precursor act as carrier suppliers in the ZTO thin film to improve the carrier (electron) concentration, which allows the potassium-doped ZTO TFT to exhibit high mobility. The anions in the precursor exist as superoxide radicals that reduce oxygen vacancies during the formation of thin oxide film. Consequently, the KO 2 -treated ZTO TFTs exhibited improved mobility and reliability compared with pristine ZTO TFTs, with an increase in field effect mobility from 5.57 to 8.74 cm 2 /V s and a decrease in the threshold voltage shift from 7.18 to 3.85 V, after a positive bias temperature stress test conducted over 5000 s.
Bibliographical noteFunding Information:
This work was supported by the Industrial Strategic Technology Development Program (10063038, development of submicro in situ light patterning to minimize damage on flexible substrates) funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea).
Copyright © 2018 American Chemical Society.
All Science Journal Classification (ASJC) codes
- Materials Science(all)