Dual Gate Black Phosphorus Field Effect Transistors on Glass for NOR Logic and Organic Light Emitting Diode Switching

Jin Sung Kim, Pyo Jin Jeon, Junyeong Lee, Kyunghee Choi, Hee Sung Lee, Youngsuk Cho, Young Tack Lee, Do Kyung Hwang, Seongil Im

Research output: Contribution to journalArticle

51 Citations (Scopus)


We have fabricated dual gate field effect transistors (FETs) with 12 nm-thin black phosphorus (BP) channel on glass substrate, where our BP FETs have a patterned-gate architecture with 30 nm-thick Al2O3 dielectrics on top and bottom of a BP channel. Top gate dielectric has simultaneously been used as device encapsulation layer, controlling the threshold voltage of FETs as well when FETs mainly operate under bottom gate bias. Bottom, top, and dual gate-controlling mobilities were estimated to be 277, 92, and 213 cm2/V s, respectively. Maximum ON-current was measured to be ∼5 μA at a drain voltage of -0.1 V but to be as high as ∼50 μA at -1 V, while ON/OFF current ratio appeared to be 3.6 × 103 V. As a result, our dual gate BP FETs demonstrate organic light emitting diode (OLED) switching for green and blue OLEDs, also demonstrating NOR logic functions by separately using top- and bottom-input.

Original languageEnglish
Pages (from-to)5778-5783
Number of pages6
JournalNano letters
Issue number9
Publication statusPublished - 2015 Sep 9


All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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