Dual-gate InGaZnO thin-film transistors with organic polymer as a dielectric layer

Ji Hyuk Choi, Hyun Sik Seo, Jae Min Myoung

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16 Citations (Scopus)

Abstract

Dual-gated (DG) thin-film transistors (TFTs) with an amorphous InGaZnO (IGZO) channel are fabricated using a poly(4-vinyl phenol) polymer as a dielectric layer. Compared to single-gated (SG) devices, DG devices showed much stronger gate controllability and greatly enhanced device performance over conventional SG TFTs. Although all devices exhibited a positive Vth shift under positive bias stress, the highly stable Vth shift of 0.17 V was observed for the IGZO TFT with DG structure. It is demonstrated that DG operation is an appropriate gate configuration to produce high-performance TFTs, which is applicable to low-power devices.

Original languageEnglish
Pages (from-to)H145-H148
JournalElectrochemical and Solid-State Letters
Volume12
Issue number4
DOIs
Publication statusPublished - 2009 Feb 24

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All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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