Dual-gate InGaZnO thin-film transistors with organic polymer as a dielectric layer

Ji Hyuk Choi, Hyun Sik Seo, Jae Min Myoung

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Dual-gated (DG) thin-film transistors (TFTs) with an amorphous InGaZnO (IGZO) channel are fabricated using a poly(4-vinyl phenol) polymer as a dielectric layer. Compared to single-gated (SG) devices, DG devices showed much stronger gate controllability and greatly enhanced device performance over conventional SG TFTs. Although all devices exhibited a positive Vth shift under positive bias stress, the highly stable Vth shift of 0.17 V was observed for the IGZO TFT with DG structure. It is demonstrated that DG operation is an appropriate gate configuration to produce high-performance TFTs, which is applicable to low-power devices.

Original languageEnglish
Pages (from-to)H145-H148
JournalElectrochemical and Solid-State Letters
Volume12
Issue number4
DOIs
Publication statusPublished - 2009 Feb 24

Fingerprint

Organic polymers
Thin film transistors
transistors
polymers
thin films
Phenol
Controllability
Phenols
shift
controllability
Polymers
phenols
configurations

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

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Dual-gate InGaZnO thin-film transistors with organic polymer as a dielectric layer. / Choi, Ji Hyuk; Seo, Hyun Sik; Myoung, Jae Min.

In: Electrochemical and Solid-State Letters, Vol. 12, No. 4, 24.02.2009, p. H145-H148.

Research output: Contribution to journalArticle

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