Dual gate ZnO-based thin-film transistors operating at 5 V: Nor gate application

C. H. Park; Kwang H. Lee; Min Suk Oh; Kimoon Lee; Seongil Im; Byoung H. Lee; Myung M. Sung

doi:10.1109/LED.2008.2007973

Dual gate ZnO-based thin-film transistors operating at 5 V: Nor gate application

C. H. Park, Kwang H. Lee, Min Suk Oh, Kimoon Lee, Seongil Im, Byoung H. Lee, Myung M. Sung

Department of Physics

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

We report on the fabrication of ZnO-based dual gate (DG) thin-film transistors (TFTs) with 20-nm-thick AI₂O₃ for both top and bottom dielectrics, which were deposited by atomic layer deposition on glass substrates at 200 °C. As characterized with single gate (SG), DG, and ground plane (GP) modes, our ZnO TFTs are well operated under 5 V. DG-mode TFT showed a field mobility of 0.38 cm²/V · s, a high saturation current of 6 μA, and an on/off current ratio of ∼10⁶, while SG- and GP-mode TFTs showed a similar value of mobility but with lower current. Using DG and GP modes, nor gate operation was well demonstrated.

Original language	English
Pages (from-to)	30-32
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	30
Issue number	1
DOIs	https://doi.org/10.1109/LED.2008.2007973
Publication status	Published - 2009

Bibliographical note

Funding Information:
Manuscript received September 25, 2008. Current version published December 24, 2008. This work was supported in part by the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Commerce, Industry and Energy, by the IT R&D program of MKE/IITA [2006-S079-02, Smart window with transparent electronic devices], and by the Brain Korea 21 Program. The review of this letter was arranged by Editor A. Nathan.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Dual gate ZnO-based thin-film transistors operating at 5 V: Nor gate application",

abstract = "We report on the fabrication of ZnO-based dual gate (DG) thin-film transistors (TFTs) with 20-nm-thick AI2O3 for both top and bottom dielectrics, which were deposited by atomic layer deposition on glass substrates at 200 °C. As characterized with single gate (SG), DG, and ground plane (GP) modes, our ZnO TFTs are well operated under 5 V. DG-mode TFT showed a field mobility of 0.38 cm2/V · s, a high saturation current of 6 μA, and an on/off current ratio of ∼106, while SG- and GP-mode TFTs showed a similar value of mobility but with lower current. Using DG and GP modes, nor gate operation was well demonstrated.",

author = "Park, {C. H.} and Lee, {Kwang H.} and Oh, {Min Suk} and Kimoon Lee and Seongil Im and Lee, {Byoung H.} and Sung, {Myung M.}",

note = "Funding Information: Manuscript received September 25, 2008. Current version published December 24, 2008. This work was supported in part by the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Commerce, Industry and Energy, by the IT R&D program of MKE/IITA [2006-S079-02, Smart window with transparent electronic devices], and by the Brain Korea 21 Program. The review of this letter was arranged by Editor A. Nathan.",

year = "2009",

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T1 - Dual gate ZnO-based thin-film transistors operating at 5 V

T2 - Nor gate application

AU - Park, C. H.

AU - Lee, Kwang H.

AU - Oh, Min Suk

AU - Lee, Kimoon

AU - Im, Seongil

AU - Lee, Byoung H.

AU - Sung, Myung M.

N1 - Funding Information: Manuscript received September 25, 2008. Current version published December 24, 2008. This work was supported in part by the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Commerce, Industry and Energy, by the IT R&D program of MKE/IITA [2006-S079-02, Smart window with transparent electronic devices], and by the Brain Korea 21 Program. The review of this letter was arranged by Editor A. Nathan.

PY - 2009

Y1 - 2009

N2 - We report on the fabrication of ZnO-based dual gate (DG) thin-film transistors (TFTs) with 20-nm-thick AI2O3 for both top and bottom dielectrics, which were deposited by atomic layer deposition on glass substrates at 200 °C. As characterized with single gate (SG), DG, and ground plane (GP) modes, our ZnO TFTs are well operated under 5 V. DG-mode TFT showed a field mobility of 0.38 cm2/V · s, a high saturation current of 6 μA, and an on/off current ratio of ∼106, while SG- and GP-mode TFTs showed a similar value of mobility but with lower current. Using DG and GP modes, nor gate operation was well demonstrated.

AB - We report on the fabrication of ZnO-based dual gate (DG) thin-film transistors (TFTs) with 20-nm-thick AI2O3 for both top and bottom dielectrics, which were deposited by atomic layer deposition on glass substrates at 200 °C. As characterized with single gate (SG), DG, and ground plane (GP) modes, our ZnO TFTs are well operated under 5 V. DG-mode TFT showed a field mobility of 0.38 cm2/V · s, a high saturation current of 6 μA, and an on/off current ratio of ∼106, while SG- and GP-mode TFTs showed a similar value of mobility but with lower current. Using DG and GP modes, nor gate operation was well demonstrated.

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