Dual gate ZnO-based thin-film transistors operating at 5 V: Nor gate application

C. H. Park; Kwang H. Lee; Min Suk Oh; Kimoon Lee; Seongil Im; Byoung H. Lee; Myung M. Sung

doi:10.1109/LED.2008.2007973

Dual gate ZnO-based thin-film transistors operating at 5 V: Nor gate application

C. H. Park, Kwang H. Lee, Min Suk Oh, Kimoon Lee, Seongil Im, Byoung H. Lee, Myung M. Sung

Department of Physics

Research output: Contribution to journal › Article

23 Citations (Scopus)

Abstract

We report on the fabrication of ZnO-based dual gate (DG) thin-film transistors (TFTs) with 20-nm-thick AI₂O₃ for both top and bottom dielectrics, which were deposited by atomic layer deposition on glass substrates at 200 °C. As characterized with single gate (SG), DG, and ground plane (GP) modes, our ZnO TFTs are well operated under 5 V. DG-mode TFT showed a field mobility of 0.38 cm²/V · s, a high saturation current of 6 μA, and an on/off current ratio of ∼10⁶, while SG- and GP-mode TFTs showed a similar value of mobility but with lower current. Using DG and GP modes, nor gate operation was well demonstrated.

Original language	English
Pages (from-to)	30-32
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	30
Issue number	1
DOIs	https://doi.org/10.1109/LED.2008.2007973
Publication status	Published - 2009 Jan 1

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

Park, C. H., Lee, K. H., Oh, M. S., Lee, K., Im, S., Lee, B. H., & Sung, M. M. (2009). Dual gate ZnO-based thin-film transistors operating at 5 V: Nor gate application. IEEE Electron Device Letters, 30(1), 30-32. https://doi.org/10.1109/LED.2008.2007973

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abstract = "We report on the fabrication of ZnO-based dual gate (DG) thin-film transistors (TFTs) with 20-nm-thick AI2O3 for both top and bottom dielectrics, which were deposited by atomic layer deposition on glass substrates at 200 °C. As characterized with single gate (SG), DG, and ground plane (GP) modes, our ZnO TFTs are well operated under 5 V. DG-mode TFT showed a field mobility of 0.38 cm2/V · s, a high saturation current of 6 μA, and an on/off current ratio of ∼106, while SG- and GP-mode TFTs showed a similar value of mobility but with lower current. Using DG and GP modes, nor gate operation was well demonstrated.",

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10.1109/LED.2008.2007973