Dual gate ZnO-based thin-film transistors operating at 5 V: Nor gate application

C. H. Park; Kwang H. Lee; Min Suk Oh; Kimoon Lee; Seongil Im; Byoung H. Lee; Myung M. Sung

doi:10.1109/LED.2008.2007973

Dual gate ZnO-based thin-film transistors operating at 5 V: Nor gate application

C. H. Park, Kwang H. Lee, Min Suk Oh, Kimoon Lee, Seongil Im, Byoung H. Lee, Myung M. Sung

Department of Physics

Research output: Contribution to journal › Article

24 Citations (Scopus)

Abstract

We report on the fabrication of ZnO-based dual gate (DG) thin-film transistors (TFTs) with 20-nm-thick AI₂O₃ for both top and bottom dielectrics, which were deposited by atomic layer deposition on glass substrates at 200 °C. As characterized with single gate (SG), DG, and ground plane (GP) modes, our ZnO TFTs are well operated under 5 V. DG-mode TFT showed a field mobility of 0.38 cm²/V · s, a high saturation current of 6 μA, and an on/off current ratio of ∼10⁶, while SG- and GP-mode TFTs showed a similar value of mobility but with lower current. Using DG and GP modes, nor gate operation was well demonstrated.

Original language	English
Pages (from-to)	30-32
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	30
Issue number	1
DOIs	https://doi.org/10.1109/LED.2008.2007973
Publication status	Published - 2009 Jan 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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Park, C. H., Lee, K. H., Oh, M. S., Lee, K., Im, S., Lee, B. H., & Sung, M. M. (2009). Dual gate ZnO-based thin-film transistors operating at 5 V: Nor gate application. IEEE Electron Device Letters, 30(1), 30-32. https://doi.org/10.1109/LED.2008.2007973

@article{0296a984a02c43db95bb7c3b84b67e70,

title = "Dual gate ZnO-based thin-film transistors operating at 5 V: Nor gate application",

abstract = "We report on the fabrication of ZnO-based dual gate (DG) thin-film transistors (TFTs) with 20-nm-thick AI2O3 for both top and bottom dielectrics, which were deposited by atomic layer deposition on glass substrates at 200 °C. As characterized with single gate (SG), DG, and ground plane (GP) modes, our ZnO TFTs are well operated under 5 V. DG-mode TFT showed a field mobility of 0.38 cm2/V · s, a high saturation current of 6 μA, and an on/off current ratio of ∼106, while SG- and GP-mode TFTs showed a similar value of mobility but with lower current. Using DG and GP modes, nor gate operation was well demonstrated.",

author = "Park, {C. H.} and Lee, {Kwang H.} and Oh, {Min Suk} and Kimoon Lee and Seongil Im and Lee, {Byoung H.} and Sung, {Myung M.}",

year = "2009",

month = jan,

day = "1",

doi = "10.1109/LED.2008.2007973",

language = "English",

volume = "30",

pages = "30--32",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - Dual gate ZnO-based thin-film transistors operating at 5 V

T2 - Nor gate application

AU - Park, C. H.

AU - Lee, Kwang H.

AU - Oh, Min Suk

AU - Lee, Kimoon

AU - Im, Seongil

AU - Lee, Byoung H.

AU - Sung, Myung M.

PY - 2009/1/1

Y1 - 2009/1/1

N2 - We report on the fabrication of ZnO-based dual gate (DG) thin-film transistors (TFTs) with 20-nm-thick AI2O3 for both top and bottom dielectrics, which were deposited by atomic layer deposition on glass substrates at 200 °C. As characterized with single gate (SG), DG, and ground plane (GP) modes, our ZnO TFTs are well operated under 5 V. DG-mode TFT showed a field mobility of 0.38 cm2/V · s, a high saturation current of 6 μA, and an on/off current ratio of ∼106, while SG- and GP-mode TFTs showed a similar value of mobility but with lower current. Using DG and GP modes, nor gate operation was well demonstrated.

AB - We report on the fabrication of ZnO-based dual gate (DG) thin-film transistors (TFTs) with 20-nm-thick AI2O3 for both top and bottom dielectrics, which were deposited by atomic layer deposition on glass substrates at 200 °C. As characterized with single gate (SG), DG, and ground plane (GP) modes, our ZnO TFTs are well operated under 5 V. DG-mode TFT showed a field mobility of 0.38 cm2/V · s, a high saturation current of 6 μA, and an on/off current ratio of ∼106, while SG- and GP-mode TFTs showed a similar value of mobility but with lower current. Using DG and GP modes, nor gate operation was well demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=58149510095&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=58149510095&partnerID=8YFLogxK

U2 - 10.1109/LED.2008.2007973

DO - 10.1109/LED.2008.2007973

M3 - Article

AN - SCOPUS:58149510095

VL - 30

SP - 30

EP - 32

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 1

ER -