Dynamic and static photoresponse of ultraviolet-detecting thin-film transistors based on transparent Ni Ox electrodes and an n-ZnO channel

H. S. Bae, C. M. Choi, Jae Hoon Kim, Seongil Im

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Abstract

We report on the fabrication of an ultraviolet (UV)-detecting thin-film transistor (TFT) using Ni Ox as sourcedrain electrodes and n-ZnO as its channel layer deposited on a Si O2 p-Si substrate. Rapid thermal annealing of the TFT was carried out in an O2 ambient at 350 °C for 1 min to increase the transparency of Ni Ox. In an accumulation mode with a gate bias of 40 V, a drain current of only 2 μA was obtained in the dark. However, under an illumination of UV light with wavelength 325 nm, the drain current dramatically increased up to 13 μA. Under UV photons with wavelength 254 nm or energy of 4.9 eV, much higher than 4.1 eV, the energy gap of Ni Ox, the photocurrent slightly decreased to ~10 μA due to the absorption by Ni Ox. These photoelectric effects were more pronounced under a gate-bias condition for a depletion (off) mode. The UV-dynamic behavior of our TFTs was also investigated, yielding the UV response time of ~300 ms and UV-onoff ratio of about 10.

Original languageEnglish
Article number076104
JournalJournal of Applied Physics
Volume97
Issue number7
DOIs
Publication statusPublished - 2005 Apr 1

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transistors
photoelectric effect
electrodes
thin films
wavelengths
ultraviolet radiation
photocurrents
depletion
illumination
fabrication
annealing
photons
energy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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title = "Dynamic and static photoresponse of ultraviolet-detecting thin-film transistors based on transparent Ni Ox electrodes and an n-ZnO channel",
abstract = "We report on the fabrication of an ultraviolet (UV)-detecting thin-film transistor (TFT) using Ni Ox as sourcedrain electrodes and n-ZnO as its channel layer deposited on a Si O2 p-Si substrate. Rapid thermal annealing of the TFT was carried out in an O2 ambient at 350 °C for 1 min to increase the transparency of Ni Ox. In an accumulation mode with a gate bias of 40 V, a drain current of only 2 μA was obtained in the dark. However, under an illumination of UV light with wavelength 325 nm, the drain current dramatically increased up to 13 μA. Under UV photons with wavelength 254 nm or energy of 4.9 eV, much higher than 4.1 eV, the energy gap of Ni Ox, the photocurrent slightly decreased to ~10 μA due to the absorption by Ni Ox. These photoelectric effects were more pronounced under a gate-bias condition for a depletion (off) mode. The UV-dynamic behavior of our TFTs was also investigated, yielding the UV response time of ~300 ms and UV-onoff ratio of about 10.",
author = "Bae, {H. S.} and Choi, {C. M.} and Kim, {Jae Hoon} and Seongil Im",
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T1 - Dynamic and static photoresponse of ultraviolet-detecting thin-film transistors based on transparent Ni Ox electrodes and an n-ZnO channel

AU - Bae, H. S.

AU - Choi, C. M.

AU - Kim, Jae Hoon

AU - Im, Seongil

PY - 2005/4/1

Y1 - 2005/4/1

N2 - We report on the fabrication of an ultraviolet (UV)-detecting thin-film transistor (TFT) using Ni Ox as sourcedrain electrodes and n-ZnO as its channel layer deposited on a Si O2 p-Si substrate. Rapid thermal annealing of the TFT was carried out in an O2 ambient at 350 °C for 1 min to increase the transparency of Ni Ox. In an accumulation mode with a gate bias of 40 V, a drain current of only 2 μA was obtained in the dark. However, under an illumination of UV light with wavelength 325 nm, the drain current dramatically increased up to 13 μA. Under UV photons with wavelength 254 nm or energy of 4.9 eV, much higher than 4.1 eV, the energy gap of Ni Ox, the photocurrent slightly decreased to ~10 μA due to the absorption by Ni Ox. These photoelectric effects were more pronounced under a gate-bias condition for a depletion (off) mode. The UV-dynamic behavior of our TFTs was also investigated, yielding the UV response time of ~300 ms and UV-onoff ratio of about 10.

AB - We report on the fabrication of an ultraviolet (UV)-detecting thin-film transistor (TFT) using Ni Ox as sourcedrain electrodes and n-ZnO as its channel layer deposited on a Si O2 p-Si substrate. Rapid thermal annealing of the TFT was carried out in an O2 ambient at 350 °C for 1 min to increase the transparency of Ni Ox. In an accumulation mode with a gate bias of 40 V, a drain current of only 2 μA was obtained in the dark. However, under an illumination of UV light with wavelength 325 nm, the drain current dramatically increased up to 13 μA. Under UV photons with wavelength 254 nm or energy of 4.9 eV, much higher than 4.1 eV, the energy gap of Ni Ox, the photocurrent slightly decreased to ~10 μA due to the absorption by Ni Ox. These photoelectric effects were more pronounced under a gate-bias condition for a depletion (off) mode. The UV-dynamic behavior of our TFTs was also investigated, yielding the UV response time of ~300 ms and UV-onoff ratio of about 10.

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