This paper presents the relationship between the dynamic power supply current and the switching behavior of an SRAM cell. Compared to a fault free cell, how the short, open and coupling faults can affect the peak value of a dynamic current pulse when a transition write is performed, is analyzed. In addition, the test for linked idempotent coupling faults is proposed. This new approach has reduced test length compared to the previous March B test. Finally the low overhead built-in current sensor that can detect a dynamic current pulse and distinguish its peak value, is proposed.
|Title of host publication||ICVC 1999 - 6th International Conference on VLSI and CAD|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|Number of pages||4|
|ISBN (Print)||0780357272, 9780780357273|
|Publication status||Published - 1999|
|Event||6th International Conference on VLSI and CAD, ICVC 1999 - Seoul, Korea, Republic of|
Duration: 1999 Oct 26 → 1999 Oct 27
|Name||ICVC 1999 - 6th International Conference on VLSI and CAD|
|Other||6th International Conference on VLSI and CAD, ICVC 1999|
|Country||Korea, Republic of|
|Period||99/10/26 → 99/10/27|
Bibliographical noteFunding Information:
In addition. the length of a test for linked coupling faults. is dramatically reduced because the test sequence *This research was supported by Samsung Electronics Co., Ltd.
© 1999 IEEE.
All Science Journal Classification (ASJC) codes
- Computer Graphics and Computer-Aided Design
- Hardware and Architecture
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials