Dynamic power supply current testing for open defects in CMOS SRAMs

D. H. Yoon, H. S. Kim, Sungho Kang

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The detection of open defects in CMOS SRAM has been a time consuming process. This paper proposes a new dynamic power supply current testing method to detect open defects in CMOS SRAM cells. By monitoring a dynamic current pulse during a transition write operation or a read operation, open defects can be detected. In order to measure the dynamic power supply current pulse, a current monitoring circuit with low hardware overhead is developed. Using the sensor, the new testing method does not require any additional test sequence. The results show that the new test method is very efficient compared with other testing methods. Therefore, the new testing method is very attractive.

Original languageEnglish
Pages (from-to)77-84
Number of pages8
JournalETRI Journal
Volume23
Issue number2
DOIs
Publication statusPublished - 2001 Jan 1

Fingerprint

Static random access storage
Defects
Testing
Monitoring
Hardware
Networks (circuits)
Sensors

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Computer Science(all)
  • Electrical and Electronic Engineering

Cite this

Yoon, D. H. ; Kim, H. S. ; Kang, Sungho. / Dynamic power supply current testing for open defects in CMOS SRAMs. In: ETRI Journal. 2001 ; Vol. 23, No. 2. pp. 77-84.
@article{7ce6195efcf14d61ac0224dade32bda9,
title = "Dynamic power supply current testing for open defects in CMOS SRAMs",
abstract = "The detection of open defects in CMOS SRAM has been a time consuming process. This paper proposes a new dynamic power supply current testing method to detect open defects in CMOS SRAM cells. By monitoring a dynamic current pulse during a transition write operation or a read operation, open defects can be detected. In order to measure the dynamic power supply current pulse, a current monitoring circuit with low hardware overhead is developed. Using the sensor, the new testing method does not require any additional test sequence. The results show that the new test method is very efficient compared with other testing methods. Therefore, the new testing method is very attractive.",
author = "Yoon, {D. H.} and Kim, {H. S.} and Sungho Kang",
year = "2001",
month = "1",
day = "1",
doi = "10.4218/etrij.01.0101.0205",
language = "English",
volume = "23",
pages = "77--84",
journal = "ETRI Journal",
issn = "1225-6463",
publisher = "ETRI",
number = "2",

}

Dynamic power supply current testing for open defects in CMOS SRAMs. / Yoon, D. H.; Kim, H. S.; Kang, Sungho.

In: ETRI Journal, Vol. 23, No. 2, 01.01.2001, p. 77-84.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Dynamic power supply current testing for open defects in CMOS SRAMs

AU - Yoon, D. H.

AU - Kim, H. S.

AU - Kang, Sungho

PY - 2001/1/1

Y1 - 2001/1/1

N2 - The detection of open defects in CMOS SRAM has been a time consuming process. This paper proposes a new dynamic power supply current testing method to detect open defects in CMOS SRAM cells. By monitoring a dynamic current pulse during a transition write operation or a read operation, open defects can be detected. In order to measure the dynamic power supply current pulse, a current monitoring circuit with low hardware overhead is developed. Using the sensor, the new testing method does not require any additional test sequence. The results show that the new test method is very efficient compared with other testing methods. Therefore, the new testing method is very attractive.

AB - The detection of open defects in CMOS SRAM has been a time consuming process. This paper proposes a new dynamic power supply current testing method to detect open defects in CMOS SRAM cells. By monitoring a dynamic current pulse during a transition write operation or a read operation, open defects can be detected. In order to measure the dynamic power supply current pulse, a current monitoring circuit with low hardware overhead is developed. Using the sensor, the new testing method does not require any additional test sequence. The results show that the new test method is very efficient compared with other testing methods. Therefore, the new testing method is very attractive.

UR - http://www.scopus.com/inward/record.url?scp=0035364765&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035364765&partnerID=8YFLogxK

U2 - 10.4218/etrij.01.0101.0205

DO - 10.4218/etrij.01.0101.0205

M3 - Article

VL - 23

SP - 77

EP - 84

JO - ETRI Journal

JF - ETRI Journal

SN - 1225-6463

IS - 2

ER -