Dynamic voltage frequency scaling-aware refresh management for 3D DRAM over processor architecture

J. Lim, H. Kim, H. Oh, Sungho Kang

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Three-dimensional integrated systems that combine large-capacity dynamic random access memory (DRAM) with high-performance processors represent a promising solution to implementing high-performance computing. However, in such configurations stacked DRAM cells will inevitably be exposed to high temperatures generated by the processor, thereby necessitating DRAMs with high refresh rates driven by embedded temperature sensors. In this Letter, a thermally aware refresh-control method that accounts for abrupt changes in temperature and thermal distribution using low-power techniques such as dynamic voltage frequency scaling is proposed. Comparisons with previous systems via single- and eight-core simulations reveal that the proposed method improves efficiency with no additional overhead.

Original languageEnglish
Pages (from-to)910-912
Number of pages3
JournalElectronics Letters
Volume53
Issue number14
DOIs
Publication statusPublished - 2017 Jul 6

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Data storage equipment
Electric potential
Dynamic random access storage
Temperature sensors
Computer systems
Temperature
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

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Dynamic voltage frequency scaling-aware refresh management for 3D DRAM over processor architecture. / Lim, J.; Kim, H.; Oh, H.; Kang, Sungho.

In: Electronics Letters, Vol. 53, No. 14, 06.07.2017, p. 910-912.

Research output: Contribution to journalArticle

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