E-band Power Forward and Divider Switch for On-Chip Reconfigurable and Scalable Arrays

Kyu Jong Choi; Byung Wook Min

doi:10.1109/IMS37962.2022.9865416

E-band Power Forward and Divider Switch for On-Chip Reconfigurable and Scalable Arrays

Kyu Jong Choi, Byung Wook Min

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper presents a power forward and divider switch (FDSW) which is a newly required switching circuit for a on-chip reconfigurable and scalable array. The FDSW has 4 input and output ports, and the input power at all 4 ports can be divided into two adjacent ports or forward to the other port, depending on the switch modes. The FDSW consists of a coupler and shunt switches at all coupler ports, and can switch between a forward mode and a divider mode by turning on/off the shunt switches. The proposed FDSW is designed at E-band using 28-nm FD-SOI CMOS process for a wafer-scale array. The coupler is based on a synthetic coupled line to accommodate the parasitic capacitance of the shunt transistor switch. Measurements show that the FDSW achieves the divide-mode loss of 1.4 dB and the forward-mode loss of 4.0 dB with the 1-dB power imbalance bandwidth of 76-92 GHz.

Original language	English
Title of host publication	2022 IEEE/MTT-S International Microwave Symposium, IMS 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	259-262
Number of pages	4
ISBN (Electronic)	9781665496131
DOIs	https://doi.org/10.1109/IMS37962.2022.9865416
Publication status	Published - 2022
Event	2022 IEEE/MTT-S International Microwave Symposium, IMS 2022 - Denver, United States Duration: 2022 Jun 19 → 2022 Jun 24

Publication series

Name	IEEE MTT-S International Microwave Symposium Digest
Volume	2022-June
ISSN (Print)	0149-645X

Conference

Conference	2022 IEEE/MTT-S International Microwave Symposium, IMS 2022
Country/Territory	United States
City	Denver
Period	22/6/19 → 22/6/24

Bibliographical note

Funding Information:
ACKNOWLEDGMENT This work was supported by IITP grant funded by the Korea government(MSIT) (No. 2020000218). The EDA tool was supported by the IC Design Education Center(IDEC), Korea.

Publisher Copyright:
© 2022 IEEE.

All Science Journal Classification (ASJC) codes

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/IMS37962.2022.9865416

Cite this

Choi, K. J., & Min, B. W. (2022). E-band Power Forward and Divider Switch for On-Chip Reconfigurable and Scalable Arrays. In 2022 IEEE/MTT-S International Microwave Symposium, IMS 2022 (pp. 259-262). (IEEE MTT-S International Microwave Symposium Digest; Vol. 2022-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMS37962.2022.9865416

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title = "E-band Power Forward and Divider Switch for On-Chip Reconfigurable and Scalable Arrays",

abstract = "This paper presents a power forward and divider switch (FDSW) which is a newly required switching circuit for a on-chip reconfigurable and scalable array. The FDSW has 4 input and output ports, and the input power at all 4 ports can be divided into two adjacent ports or forward to the other port, depending on the switch modes. The FDSW consists of a coupler and shunt switches at all coupler ports, and can switch between a forward mode and a divider mode by turning on/off the shunt switches. The proposed FDSW is designed at E-band using 28-nm FD-SOI CMOS process for a wafer-scale array. The coupler is based on a synthetic coupled line to accommodate the parasitic capacitance of the shunt transistor switch. Measurements show that the FDSW achieves the divide-mode loss of 1.4 dB and the forward-mode loss of 4.0 dB with the 1-dB power imbalance bandwidth of 76-92 GHz.",

author = "Choi, {Kyu Jong} and Min, {Byung Wook}",

note = "Funding Information: ACKNOWLEDGMENT This work was supported by IITP grant funded by the Korea government(MSIT) (No. 2020000218). The EDA tool was supported by the IC Design Education Center(IDEC), Korea. Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE/MTT-S International Microwave Symposium, IMS 2022 ; Conference date: 19-06-2022 Through 24-06-2022",

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doi = "10.1109/IMS37962.2022.9865416",

language = "English",

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Choi, KJ & Min, BW 2022, E-band Power Forward and Divider Switch for On-Chip Reconfigurable and Scalable Arrays. in 2022 IEEE/MTT-S International Microwave Symposium, IMS 2022. IEEE MTT-S International Microwave Symposium Digest, vol. 2022-June, Institute of Electrical and Electronics Engineers Inc., pp. 259-262, 2022 IEEE/MTT-S International Microwave Symposium, IMS 2022, Denver, United States, 22/6/19. https://doi.org/10.1109/IMS37962.2022.9865416

E-band Power Forward and Divider Switch for On-Chip Reconfigurable and Scalable Arrays. / Choi, Kyu Jong; Min, Byung Wook.

2022 IEEE/MTT-S International Microwave Symposium, IMS 2022. Institute of Electrical and Electronics Engineers Inc., 2022. p. 259-262 (IEEE MTT-S International Microwave Symposium Digest; Vol. 2022-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N1 - Funding Information: ACKNOWLEDGMENT This work was supported by IITP grant funded by the Korea government(MSIT) (No. 2020000218). The EDA tool was supported by the IC Design Education Center(IDEC), Korea. Publisher Copyright: © 2022 IEEE.

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N2 - This paper presents a power forward and divider switch (FDSW) which is a newly required switching circuit for a on-chip reconfigurable and scalable array. The FDSW has 4 input and output ports, and the input power at all 4 ports can be divided into two adjacent ports or forward to the other port, depending on the switch modes. The FDSW consists of a coupler and shunt switches at all coupler ports, and can switch between a forward mode and a divider mode by turning on/off the shunt switches. The proposed FDSW is designed at E-band using 28-nm FD-SOI CMOS process for a wafer-scale array. The coupler is based on a synthetic coupled line to accommodate the parasitic capacitance of the shunt transistor switch. Measurements show that the FDSW achieves the divide-mode loss of 1.4 dB and the forward-mode loss of 4.0 dB with the 1-dB power imbalance bandwidth of 76-92 GHz.

AB - This paper presents a power forward and divider switch (FDSW) which is a newly required switching circuit for a on-chip reconfigurable and scalable array. The FDSW has 4 input and output ports, and the input power at all 4 ports can be divided into two adjacent ports or forward to the other port, depending on the switch modes. The FDSW consists of a coupler and shunt switches at all coupler ports, and can switch between a forward mode and a divider mode by turning on/off the shunt switches. The proposed FDSW is designed at E-band using 28-nm FD-SOI CMOS process for a wafer-scale array. The coupler is based on a synthetic coupled line to accommodate the parasitic capacitance of the shunt transistor switch. Measurements show that the FDSW achieves the divide-mode loss of 1.4 dB and the forward-mode loss of 4.0 dB with the 1-dB power imbalance bandwidth of 76-92 GHz.

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E-band Power Forward and Divider Switch for On-Chip Reconfigurable and Scalable Arrays

Abstract

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