Advanced capacity and density of memory have resulted in an increase in the probability of memory faults. The in-memory Error Correction Code (ECC), which solves this problem, is a widely used technology to improve the yield of highly integrated memory. However, the use of in-memory ECC causes problems that have not been considered in memory repair algorithms. Redundancy analysis is effective for repairing memory with redundant memory and in-memory ECC. In this paper, an ECC-aware fast and reliable pattern matching redundancy analysis algorithm for memory using both spare memory and in-memory ECC is proposed. This algorithm simplifies large-scale fault groups using in-memory ECC and includes an early termination method that can determine whether a memory that cannot be repaired with line spares can be repaired considering in-memory ECC. Experimental results show that the proposed pattern matching redundancy analysis algorithm achieves a similar yield but 14.6% less RA time and 8.6 times higher reliability compared to the existing redundancy analysis algorithms.
|Number of pages||15|
|Publication status||Published - 2021|
Bibliographical notePublisher Copyright:
© 2013 IEEE.
All Science Journal Classification (ASJC) codes
- Computer Science(all)
- Materials Science(all)