Effect of acetic acid on the performance of solution-processed gallium doped indium oxide thin film transistors

Jee Ho Park, Young Bum Yoo, Keun Ho Lee, Sun Woong Han, Won Jin Choi, Hong Koo Baik

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We investigated a role of acetic acid for solution processed gallium doped indium oxide thin film transistors (TFTs). By adding acetic acid in solution instead of commonly used ethanolamine, electrical performance of GIO TFTs is significantly enhanced. We demonstrated that acetic acid plays a role in enhancing crystallinity, lowering decomposition temperature and reducing hydroxyl groups in the film. The GIO TFTs formed from acetic acid added solution have mobility of 12.68 cm2 V-1 s-1, threshold voltage of -7.4 V, on/off current ratio of 1.07 × 108 and subthreshold slope of 0.78 V/decade.

Original languageEnglish
Pages (from-to)130-134
Number of pages5
JournalJournal of Sol-Gel Science and Technology
Volume67
Issue number1
DOIs
Publication statusPublished - 2013 Jul 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Chemistry(all)
  • Biomaterials
  • Condensed Matter Physics
  • Materials Chemistry

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