Effect of acetic acid on the performance of solution-processed gallium doped indium oxide thin film transistors

Jee Ho Park, Young Bum Yoo, Keun Ho Lee, Sun Woong Han, Won Jin Choi, Hong Koo Baik

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We investigated a role of acetic acid for solution processed gallium doped indium oxide thin film transistors (TFTs). By adding acetic acid in solution instead of commonly used ethanolamine, electrical performance of GIO TFTs is significantly enhanced. We demonstrated that acetic acid plays a role in enhancing crystallinity, lowering decomposition temperature and reducing hydroxyl groups in the film. The GIO TFTs formed from acetic acid added solution have mobility of 12.68 cm2 V-1 s-1, threshold voltage of -7.4 V, on/off current ratio of 1.07 × 108 and subthreshold slope of 0.78 V/decade.

Original languageEnglish
Pages (from-to)130-134
Number of pages5
JournalJournal of Sol-Gel Science and Technology
Volume67
Issue number1
DOIs
Publication statusPublished - 2013 Jul 1

Fingerprint

Gallium
Thin film transistors
acetic acid
Acetic acid
Acetic Acid
indium oxides
Indium
Oxide films
gallium
transistors
thin films
Ethanolamines
Ethanolamine
Threshold voltage
Hydroxyl Radical
threshold voltage
crystallinity
slopes
Decomposition
decomposition

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Chemistry(all)
  • Biomaterials
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Park, Jee Ho ; Yoo, Young Bum ; Lee, Keun Ho ; Han, Sun Woong ; Choi, Won Jin ; Baik, Hong Koo. / Effect of acetic acid on the performance of solution-processed gallium doped indium oxide thin film transistors. In: Journal of Sol-Gel Science and Technology. 2013 ; Vol. 67, No. 1. pp. 130-134.
@article{496a1331a2e54987ad1788919e36cc94,
title = "Effect of acetic acid on the performance of solution-processed gallium doped indium oxide thin film transistors",
abstract = "We investigated a role of acetic acid for solution processed gallium doped indium oxide thin film transistors (TFTs). By adding acetic acid in solution instead of commonly used ethanolamine, electrical performance of GIO TFTs is significantly enhanced. We demonstrated that acetic acid plays a role in enhancing crystallinity, lowering decomposition temperature and reducing hydroxyl groups in the film. The GIO TFTs formed from acetic acid added solution have mobility of 12.68 cm2 V-1 s-1, threshold voltage of -7.4 V, on/off current ratio of 1.07 × 108 and subthreshold slope of 0.78 V/decade.",
author = "Park, {Jee Ho} and Yoo, {Young Bum} and Lee, {Keun Ho} and Han, {Sun Woong} and Choi, {Won Jin} and Baik, {Hong Koo}",
year = "2013",
month = "7",
day = "1",
doi = "10.1007/s10971-013-3058-x",
language = "English",
volume = "67",
pages = "130--134",
journal = "Journal of Sol-Gel Science and Technology",
issn = "0928-0707",
publisher = "Springer Netherlands",
number = "1",

}

Effect of acetic acid on the performance of solution-processed gallium doped indium oxide thin film transistors. / Park, Jee Ho; Yoo, Young Bum; Lee, Keun Ho; Han, Sun Woong; Choi, Won Jin; Baik, Hong Koo.

In: Journal of Sol-Gel Science and Technology, Vol. 67, No. 1, 01.07.2013, p. 130-134.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effect of acetic acid on the performance of solution-processed gallium doped indium oxide thin film transistors

AU - Park, Jee Ho

AU - Yoo, Young Bum

AU - Lee, Keun Ho

AU - Han, Sun Woong

AU - Choi, Won Jin

AU - Baik, Hong Koo

PY - 2013/7/1

Y1 - 2013/7/1

N2 - We investigated a role of acetic acid for solution processed gallium doped indium oxide thin film transistors (TFTs). By adding acetic acid in solution instead of commonly used ethanolamine, electrical performance of GIO TFTs is significantly enhanced. We demonstrated that acetic acid plays a role in enhancing crystallinity, lowering decomposition temperature and reducing hydroxyl groups in the film. The GIO TFTs formed from acetic acid added solution have mobility of 12.68 cm2 V-1 s-1, threshold voltage of -7.4 V, on/off current ratio of 1.07 × 108 and subthreshold slope of 0.78 V/decade.

AB - We investigated a role of acetic acid for solution processed gallium doped indium oxide thin film transistors (TFTs). By adding acetic acid in solution instead of commonly used ethanolamine, electrical performance of GIO TFTs is significantly enhanced. We demonstrated that acetic acid plays a role in enhancing crystallinity, lowering decomposition temperature and reducing hydroxyl groups in the film. The GIO TFTs formed from acetic acid added solution have mobility of 12.68 cm2 V-1 s-1, threshold voltage of -7.4 V, on/off current ratio of 1.07 × 108 and subthreshold slope of 0.78 V/decade.

UR - http://www.scopus.com/inward/record.url?scp=84881022553&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84881022553&partnerID=8YFLogxK

U2 - 10.1007/s10971-013-3058-x

DO - 10.1007/s10971-013-3058-x

M3 - Article

AN - SCOPUS:84881022553

VL - 67

SP - 130

EP - 134

JO - Journal of Sol-Gel Science and Technology

JF - Journal of Sol-Gel Science and Technology

SN - 0928-0707

IS - 1

ER -