We investigated a role of acetic acid for solution processed gallium doped indium oxide thin film transistors (TFTs). By adding acetic acid in solution instead of commonly used ethanolamine, electrical performance of GIO TFTs is significantly enhanced. We demonstrated that acetic acid plays a role in enhancing crystallinity, lowering decomposition temperature and reducing hydroxyl groups in the film. The GIO TFTs formed from acetic acid added solution have mobility of 12.68 cm2 V-1 s-1, threshold voltage of -7.4 V, on/off current ratio of 1.07 × 108 and subthreshold slope of 0.78 V/decade.
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Acknowledgments This work was supported by the National Research Foundation of Korea (NRF, 2012-0008721) funded by the government of Korea (MEST). Further funding came from LG Display.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry