Effect of active layer thickness on the indium-gallium-zinc-oxide TFTs

Sun Jae Kim, Soo Yeon Lee, Jang Yeon Kwon, Woo Geun Lee, Kap Soo Yoon, Young Wook Lee, Min Koo Han

Research output: Contribution to conferencePaper

Abstract

IGZO TFTs with various active-layer thick-nesses were investigated. V TH of TFT with 400Å active-layer was -0.6V at R.T. and shifted 0.83 V at 230 °C while that of TFT with 700A° active-layer was -1.2V and shifted 2.3V. We have investigated the effect of active-layer thickness on the IGZO TFTs.

Original languageEnglish
Pages767-769
Number of pages3
Publication statusPublished - 2010 Dec 1
Event17th International Display Workshops, IDW'10 - Fukuoka, Japan
Duration: 2010 Dec 12010 Dec 3

Other

Other17th International Display Workshops, IDW'10
CountryJapan
CityFukuoka
Period10/12/110/12/3

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All Science Journal Classification (ASJC) codes

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction

Cite this

Kim, S. J., Lee, S. Y., Kwon, J. Y., Lee, W. G., Yoon, K. S., Lee, Y. W., & Han, M. K. (2010). Effect of active layer thickness on the indium-gallium-zinc-oxide TFTs. 767-769. Paper presented at 17th International Display Workshops, IDW'10, Fukuoka, Japan.