Effect of active layer thickness on the indium-gallium-zinc-oxide TFTs

Sun Jae Kim, Soo Yeon Lee, Jang Yeon Kwon, Woo Geun Lee, Kap Soo Yoon, Young Wook Lee, Min Koo Han

Research output: Contribution to conferencePaper

Abstract

IGZO TFTs with various active-layer thick-nesses were investigated. V TH of TFT with 400Å active-layer was -0.6V at R.T. and shifted 0.83 V at 230 °C while that of TFT with 700A° active-layer was -1.2V and shifted 2.3V. We have investigated the effect of active-layer thickness on the IGZO TFTs.

Original languageEnglish
Pages767-769
Number of pages3
Publication statusPublished - 2010 Dec 1
Event17th International Display Workshops, IDW'10 - Fukuoka, Japan
Duration: 2010 Dec 12010 Dec 3

Other

Other17th International Display Workshops, IDW'10
CountryJapan
CityFukuoka
Period10/12/110/12/3

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Gallium
Zinc oxide
Indium

All Science Journal Classification (ASJC) codes

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction

Cite this

Kim, S. J., Lee, S. Y., Kwon, J. Y., Lee, W. G., Yoon, K. S., Lee, Y. W., & Han, M. K. (2010). Effect of active layer thickness on the indium-gallium-zinc-oxide TFTs. 767-769. Paper presented at 17th International Display Workshops, IDW'10, Fukuoka, Japan.
Kim, Sun Jae ; Lee, Soo Yeon ; Kwon, Jang Yeon ; Lee, Woo Geun ; Yoon, Kap Soo ; Lee, Young Wook ; Han, Min Koo. / Effect of active layer thickness on the indium-gallium-zinc-oxide TFTs. Paper presented at 17th International Display Workshops, IDW'10, Fukuoka, Japan.3 p.
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abstract = "IGZO TFTs with various active-layer thick-nesses were investigated. V TH of TFT with 400{\AA} active-layer was -0.6V at R.T. and shifted 0.83 V at 230 °C while that of TFT with 700A° active-layer was -1.2V and shifted 2.3V. We have investigated the effect of active-layer thickness on the IGZO TFTs.",
author = "Kim, {Sun Jae} and Lee, {Soo Yeon} and Kwon, {Jang Yeon} and Lee, {Woo Geun} and Yoon, {Kap Soo} and Lee, {Young Wook} and Han, {Min Koo}",
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Kim, SJ, Lee, SY, Kwon, JY, Lee, WG, Yoon, KS, Lee, YW & Han, MK 2010, 'Effect of active layer thickness on the indium-gallium-zinc-oxide TFTs' Paper presented at 17th International Display Workshops, IDW'10, Fukuoka, Japan, 10/12/1 - 10/12/3, pp. 767-769.

Effect of active layer thickness on the indium-gallium-zinc-oxide TFTs. / Kim, Sun Jae; Lee, Soo Yeon; Kwon, Jang Yeon; Lee, Woo Geun; Yoon, Kap Soo; Lee, Young Wook; Han, Min Koo.

2010. 767-769 Paper presented at 17th International Display Workshops, IDW'10, Fukuoka, Japan.

Research output: Contribution to conferencePaper

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AU - Kim, Sun Jae

AU - Lee, Soo Yeon

AU - Kwon, Jang Yeon

AU - Lee, Woo Geun

AU - Yoon, Kap Soo

AU - Lee, Young Wook

AU - Han, Min Koo

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N2 - IGZO TFTs with various active-layer thick-nesses were investigated. V TH of TFT with 400Å active-layer was -0.6V at R.T. and shifted 0.83 V at 230 °C while that of TFT with 700A° active-layer was -1.2V and shifted 2.3V. We have investigated the effect of active-layer thickness on the IGZO TFTs.

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Kim SJ, Lee SY, Kwon JY, Lee WG, Yoon KS, Lee YW et al. Effect of active layer thickness on the indium-gallium-zinc-oxide TFTs. 2010. Paper presented at 17th International Display Workshops, IDW'10, Fukuoka, Japan.