Effect of Al distribution on carrier generation of atomic layer deposited Al-doped ZnO films

Do Joong Lee; Jang Yeon Kwon; Soo Hyun Kim; Hyun Mi Kim; Ki Bum Kim

doi:10.1149/1.3568881

Effect of Al distribution on carrier generation of atomic layer deposited Al-doped ZnO films

Do Joong Lee, Jang Yeon Kwon, Soo Hyun Kim, Hyun Mi Kim, Ki Bum Kim

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

36 Citations (Scopus)

Abstract

The effect of the Al distribution on the electrical properties of Al-doped ZnO (AZO) films deposited by atomic layer deposition (ALD) is investigated. In order to control the Al distribution, the pulsing time of trimethylaluminum (TMA) is varied from 2 (within an ALD window) to 0.1 s. As a result, the areal density of Al atoms incorporated in a single dopant layer decreases from 3.3 10¹⁴ to 1.2 × 10¹⁴ cm^-2. Hall measurements reveal that the minimum resistivity of the ALD-AZO films is decreased from 3.2 × 10^-3 to 1.7 × 10^-3 ωcm as a result of reducing the TMA pulsing time from 2 to 0.1 s. This decrease is due to the obvious increase of the carrier concentration from 1.4 10²⁰ to 4.7 × 10²⁰ cm^-3. It is suggested that both the improved doping efficiency (from 13 to 58) and the insertion of more dopant layers within the ZnO matrix are responsible for the increase of the carrier concentration.

Original language	English
Pages (from-to)	D277-D281
Journal	Journal of the Electrochemical Society
Volume	158
Issue number	5
DOIs	https://doi.org/10.1149/1.3568881
Publication status	Published - 2011

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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title = "Effect of Al distribution on carrier generation of atomic layer deposited Al-doped ZnO films",

abstract = "The effect of the Al distribution on the electrical properties of Al-doped ZnO (AZO) films deposited by atomic layer deposition (ALD) is investigated. In order to control the Al distribution, the pulsing time of trimethylaluminum (TMA) is varied from 2 (within an ALD window) to 0.1 s. As a result, the areal density of Al atoms incorporated in a single dopant layer decreases from 3.3 1014 to 1.2 × 1014 cm-2. Hall measurements reveal that the minimum resistivity of the ALD-AZO films is decreased from 3.2 × 10-3 to 1.7 × 10-3 ωcm as a result of reducing the TMA pulsing time from 2 to 0.1 s. This decrease is due to the obvious increase of the carrier concentration from 1.4 1020 to 4.7 × 1020 cm-3. It is suggested that both the improved doping efficiency (from 13 to 58) and the insertion of more dopant layers within the ZnO matrix are responsible for the increase of the carrier concentration.",

author = "Lee, {Do Joong} and Kwon, {Jang Yeon} and Kim, {Soo Hyun} and Kim, {Hyun Mi} and Kim, {Ki Bum}",

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T1 - Effect of Al distribution on carrier generation of atomic layer deposited Al-doped ZnO films

AU - Lee, Do Joong

AU - Kwon, Jang Yeon

AU - Kim, Soo Hyun

AU - Kim, Hyun Mi

AU - Kim, Ki Bum

PY - 2011

Y1 - 2011

N2 - The effect of the Al distribution on the electrical properties of Al-doped ZnO (AZO) films deposited by atomic layer deposition (ALD) is investigated. In order to control the Al distribution, the pulsing time of trimethylaluminum (TMA) is varied from 2 (within an ALD window) to 0.1 s. As a result, the areal density of Al atoms incorporated in a single dopant layer decreases from 3.3 1014 to 1.2 × 1014 cm-2. Hall measurements reveal that the minimum resistivity of the ALD-AZO films is decreased from 3.2 × 10-3 to 1.7 × 10-3 ωcm as a result of reducing the TMA pulsing time from 2 to 0.1 s. This decrease is due to the obvious increase of the carrier concentration from 1.4 1020 to 4.7 × 1020 cm-3. It is suggested that both the improved doping efficiency (from 13 to 58) and the insertion of more dopant layers within the ZnO matrix are responsible for the increase of the carrier concentration.

AB - The effect of the Al distribution on the electrical properties of Al-doped ZnO (AZO) films deposited by atomic layer deposition (ALD) is investigated. In order to control the Al distribution, the pulsing time of trimethylaluminum (TMA) is varied from 2 (within an ALD window) to 0.1 s. As a result, the areal density of Al atoms incorporated in a single dopant layer decreases from 3.3 1014 to 1.2 × 1014 cm-2. Hall measurements reveal that the minimum resistivity of the ALD-AZO films is decreased from 3.2 × 10-3 to 1.7 × 10-3 ωcm as a result of reducing the TMA pulsing time from 2 to 0.1 s. This decrease is due to the obvious increase of the carrier concentration from 1.4 1020 to 4.7 × 1020 cm-3. It is suggested that both the improved doping efficiency (from 13 to 58) and the insertion of more dopant layers within the ZnO matrix are responsible for the increase of the carrier concentration.

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