Effect of alcohol-based sulfur treatment on Pt Ohmic contacts to p-type GaN

Chul Huh; Sang Woo Kim; Hyun Min Kim; Dong Joon Kim; Seong Ju Park

doi:10.1063/1.1358356

Effect of alcohol-based sulfur treatment on Pt Ohmic contacts to p-type GaN

Chul Huh, Sang Woo Kim, Hyun Min Kim, Dong Joon Kim, Seong Ju Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The effects of an alcohol-based (NH₄)₂S solution [t-C₄H₉OH+(NH₄)₂S] treatment on Pt Ohmic contacts to p-type GaN are presented. The specific contact resistance decreased by three orders of magnitude from 2.56x 10^-2to 4.71 x 10^-5Ω cm²as a result of surface treatment using an alcohol-based (NH₄)₂S solution compared to that of the untreated sample. The O 1s and Pt 4f core-level peaks in the x-ray photoemission spectra showed that the alcohol-based (NH₄)₂S treatment was effective in removing of the surface oxide layer. Compared to the untreated sample, the alcohol-based (NH₄)₂S-treated sample showed a Ga 2p core-level peak which was shifted toward the valence-band edge by 0.25 eV, indicating that the surface Fermi level was shifted toward the valence-band edge. These results suggest that the surface barrier height for hole injection from Pt metal to p-type GaN can be lowered by the surface treatment, thus resulting in a drastic reduction in specific contact resistance.

Original language	English
Pages (from-to)	1942-1944
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	13
DOIs	https://doi.org/10.1063/1.1358356
Publication status	Published - 2001 Mar 26

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1358356

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title = "Effect of alcohol-based sulfur treatment on Pt Ohmic contacts to p-type GaN",

abstract = "The effects of an alcohol-based (NH4)2S solution [t-C4H9OH+(NH4)2S] treatment on Pt Ohmic contacts to p-type GaN are presented. The specific contact resistance decreased by three orders of magnitude from 2.56x 10-2to 4.71 x 10-5Ω cm2as a result of surface treatment using an alcohol-based (NH4)2S solution compared to that of the untreated sample. The O 1s and Pt 4f core-level peaks in the x-ray photoemission spectra showed that the alcohol-based (NH4)2S treatment was effective in removing of the surface oxide layer. Compared to the untreated sample, the alcohol-based (NH4)2S-treated sample showed a Ga 2p core-level peak which was shifted toward the valence-band edge by 0.25 eV, indicating that the surface Fermi level was shifted toward the valence-band edge. These results suggest that the surface barrier height for hole injection from Pt metal to p-type GaN can be lowered by the surface treatment, thus resulting in a drastic reduction in specific contact resistance.",

author = "Chul Huh and Kim, {Sang Woo} and Kim, {Hyun Min} and Kim, {Dong Joon} and Park, {Seong Ju}",

year = "2001",

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doi = "10.1063/1.1358356",

language = "English",

volume = "78",

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journal = "Applied Physics Letters",

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T1 - Effect of alcohol-based sulfur treatment on Pt Ohmic contacts to p-type GaN

AU - Huh, Chul

AU - Kim, Sang Woo

AU - Kim, Hyun Min

AU - Kim, Dong Joon

AU - Park, Seong Ju

PY - 2001/3/26

Y1 - 2001/3/26

N2 - The effects of an alcohol-based (NH4)2S solution [t-C4H9OH+(NH4)2S] treatment on Pt Ohmic contacts to p-type GaN are presented. The specific contact resistance decreased by three orders of magnitude from 2.56x 10-2to 4.71 x 10-5Ω cm2as a result of surface treatment using an alcohol-based (NH4)2S solution compared to that of the untreated sample. The O 1s and Pt 4f core-level peaks in the x-ray photoemission spectra showed that the alcohol-based (NH4)2S treatment was effective in removing of the surface oxide layer. Compared to the untreated sample, the alcohol-based (NH4)2S-treated sample showed a Ga 2p core-level peak which was shifted toward the valence-band edge by 0.25 eV, indicating that the surface Fermi level was shifted toward the valence-band edge. These results suggest that the surface barrier height for hole injection from Pt metal to p-type GaN can be lowered by the surface treatment, thus resulting in a drastic reduction in specific contact resistance.

AB - The effects of an alcohol-based (NH4)2S solution [t-C4H9OH+(NH4)2S] treatment on Pt Ohmic contacts to p-type GaN are presented. The specific contact resistance decreased by three orders of magnitude from 2.56x 10-2to 4.71 x 10-5Ω cm2as a result of surface treatment using an alcohol-based (NH4)2S solution compared to that of the untreated sample. The O 1s and Pt 4f core-level peaks in the x-ray photoemission spectra showed that the alcohol-based (NH4)2S treatment was effective in removing of the surface oxide layer. Compared to the untreated sample, the alcohol-based (NH4)2S-treated sample showed a Ga 2p core-level peak which was shifted toward the valence-band edge by 0.25 eV, indicating that the surface Fermi level was shifted toward the valence-band edge. These results suggest that the surface barrier height for hole injection from Pt metal to p-type GaN can be lowered by the surface treatment, thus resulting in a drastic reduction in specific contact resistance.

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Effect of alcohol-based sulfur treatment on Pt Ohmic contacts to p-type GaN

Abstract

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