Effect of Al2O3 Deposition on Performance of Top-Gated Monolayer MoS2-Based Field Effect Transistor

Jeong Gyu Song, Seok Jin Kim, Whang Je Woo, Youngjun Kim, Il Kwon Oh, Gyeong Hee Ryu, Zonghoon Lee, Jun Hyung Lim, Jusang Park, Hyungjun Kim

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Deposition of high-k dielectrics on two-dimensional MoS2 is an important process for successful application of the transition-metal dichalcogenides in electronic devices. Here, we show the effect of H2O reactant exposure on monolayer (1L) MoS2 during atomic layer deposition (ALD) of Al2O3. The results showed that the ALD-Al2O3 caused degradation of the performance of 1L MoS2 field effect transistors (FETs) owing to the formation of Mo-O bonding and trapping of H2O molecules at the Al2O3/MoS2 interface. Furthermore, we demonstrated that reduced duration of exposure to H2O reactant and postdeposition annealing were essential to the enhancement of the performance of top-gated 1L MoS2 FETs. The mobility and on/off current ratios were increased by factors of approximately 40 and 103, respectively, with reduced duration of exposure to H2O reactant and with postdeposition annealing.

Original languageEnglish
Pages (from-to)28130-28135
Number of pages6
JournalACS Applied Materials and Interfaces
Volume8
Issue number41
DOIs
Publication statusPublished - 2016 Oct 19

Fingerprint

Atomic layer deposition
Field effect transistors
Monolayers
Annealing
Transition metals
Degradation
Molecules
High-k dielectric

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Song, Jeong Gyu ; Kim, Seok Jin ; Woo, Whang Je ; Kim, Youngjun ; Oh, Il Kwon ; Ryu, Gyeong Hee ; Lee, Zonghoon ; Lim, Jun Hyung ; Park, Jusang ; Kim, Hyungjun. / Effect of Al2O3 Deposition on Performance of Top-Gated Monolayer MoS2-Based Field Effect Transistor. In: ACS Applied Materials and Interfaces. 2016 ; Vol. 8, No. 41. pp. 28130-28135.
@article{7bebb0e7215a4b39902597c5b92b3c54,
title = "Effect of Al2O3 Deposition on Performance of Top-Gated Monolayer MoS2-Based Field Effect Transistor",
abstract = "Deposition of high-k dielectrics on two-dimensional MoS2 is an important process for successful application of the transition-metal dichalcogenides in electronic devices. Here, we show the effect of H2O reactant exposure on monolayer (1L) MoS2 during atomic layer deposition (ALD) of Al2O3. The results showed that the ALD-Al2O3 caused degradation of the performance of 1L MoS2 field effect transistors (FETs) owing to the formation of Mo-O bonding and trapping of H2O molecules at the Al2O3/MoS2 interface. Furthermore, we demonstrated that reduced duration of exposure to H2O reactant and postdeposition annealing were essential to the enhancement of the performance of top-gated 1L MoS2 FETs. The mobility and on/off current ratios were increased by factors of approximately 40 and 103, respectively, with reduced duration of exposure to H2O reactant and with postdeposition annealing.",
author = "Song, {Jeong Gyu} and Kim, {Seok Jin} and Woo, {Whang Je} and Youngjun Kim and Oh, {Il Kwon} and Ryu, {Gyeong Hee} and Zonghoon Lee and Lim, {Jun Hyung} and Jusang Park and Hyungjun Kim",
year = "2016",
month = "10",
day = "19",
doi = "10.1021/acsami.6b07271",
language = "English",
volume = "8",
pages = "28130--28135",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "41",

}

Song, JG, Kim, SJ, Woo, WJ, Kim, Y, Oh, IK, Ryu, GH, Lee, Z, Lim, JH, Park, J & Kim, H 2016, 'Effect of Al2O3 Deposition on Performance of Top-Gated Monolayer MoS2-Based Field Effect Transistor', ACS Applied Materials and Interfaces, vol. 8, no. 41, pp. 28130-28135. https://doi.org/10.1021/acsami.6b07271

Effect of Al2O3 Deposition on Performance of Top-Gated Monolayer MoS2-Based Field Effect Transistor. / Song, Jeong Gyu; Kim, Seok Jin; Woo, Whang Je; Kim, Youngjun; Oh, Il Kwon; Ryu, Gyeong Hee; Lee, Zonghoon; Lim, Jun Hyung; Park, Jusang; Kim, Hyungjun.

In: ACS Applied Materials and Interfaces, Vol. 8, No. 41, 19.10.2016, p. 28130-28135.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effect of Al2O3 Deposition on Performance of Top-Gated Monolayer MoS2-Based Field Effect Transistor

AU - Song, Jeong Gyu

AU - Kim, Seok Jin

AU - Woo, Whang Je

AU - Kim, Youngjun

AU - Oh, Il Kwon

AU - Ryu, Gyeong Hee

AU - Lee, Zonghoon

AU - Lim, Jun Hyung

AU - Park, Jusang

AU - Kim, Hyungjun

PY - 2016/10/19

Y1 - 2016/10/19

N2 - Deposition of high-k dielectrics on two-dimensional MoS2 is an important process for successful application of the transition-metal dichalcogenides in electronic devices. Here, we show the effect of H2O reactant exposure on monolayer (1L) MoS2 during atomic layer deposition (ALD) of Al2O3. The results showed that the ALD-Al2O3 caused degradation of the performance of 1L MoS2 field effect transistors (FETs) owing to the formation of Mo-O bonding and trapping of H2O molecules at the Al2O3/MoS2 interface. Furthermore, we demonstrated that reduced duration of exposure to H2O reactant and postdeposition annealing were essential to the enhancement of the performance of top-gated 1L MoS2 FETs. The mobility and on/off current ratios were increased by factors of approximately 40 and 103, respectively, with reduced duration of exposure to H2O reactant and with postdeposition annealing.

AB - Deposition of high-k dielectrics on two-dimensional MoS2 is an important process for successful application of the transition-metal dichalcogenides in electronic devices. Here, we show the effect of H2O reactant exposure on monolayer (1L) MoS2 during atomic layer deposition (ALD) of Al2O3. The results showed that the ALD-Al2O3 caused degradation of the performance of 1L MoS2 field effect transistors (FETs) owing to the formation of Mo-O bonding and trapping of H2O molecules at the Al2O3/MoS2 interface. Furthermore, we demonstrated that reduced duration of exposure to H2O reactant and postdeposition annealing were essential to the enhancement of the performance of top-gated 1L MoS2 FETs. The mobility and on/off current ratios were increased by factors of approximately 40 and 103, respectively, with reduced duration of exposure to H2O reactant and with postdeposition annealing.

UR - http://www.scopus.com/inward/record.url?scp=84992202148&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84992202148&partnerID=8YFLogxK

U2 - 10.1021/acsami.6b07271

DO - 10.1021/acsami.6b07271

M3 - Article

VL - 8

SP - 28130

EP - 28135

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 41

ER -