Effect of Al2O3 Deposition on Performance of Top-Gated Monolayer MoS2-Based Field Effect Transistor

Jeong Gyu Song, Seok Jin Kim, Whang Je Woo, Youngjun Kim, Il Kwon Oh, Gyeong Hee Ryu, Zonghoon Lee, Jun Hyung Lim, Jusang Park, Hyungjun Kim

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18 Citations (Scopus)

Abstract

Deposition of high-k dielectrics on two-dimensional MoS2 is an important process for successful application of the transition-metal dichalcogenides in electronic devices. Here, we show the effect of H2O reactant exposure on monolayer (1L) MoS2 during atomic layer deposition (ALD) of Al2O3. The results showed that the ALD-Al2O3 caused degradation of the performance of 1L MoS2 field effect transistors (FETs) owing to the formation of Mo-O bonding and trapping of H2O molecules at the Al2O3/MoS2 interface. Furthermore, we demonstrated that reduced duration of exposure to H2O reactant and postdeposition annealing were essential to the enhancement of the performance of top-gated 1L MoS2 FETs. The mobility and on/off current ratios were increased by factors of approximately 40 and 103, respectively, with reduced duration of exposure to H2O reactant and with postdeposition annealing.

Original languageEnglish
Pages (from-to)28130-28135
Number of pages6
JournalACS Applied Materials and Interfaces
Volume8
Issue number41
DOIs
Publication statusPublished - 2016 Oct 19

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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    Song, J. G., Kim, S. J., Woo, W. J., Kim, Y., Oh, I. K., Ryu, G. H., Lee, Z., Lim, J. H., Park, J., & Kim, H. (2016). Effect of Al2O3 Deposition on Performance of Top-Gated Monolayer MoS2-Based Field Effect Transistor. ACS Applied Materials and Interfaces, 8(41), 28130-28135. https://doi.org/10.1021/acsami.6b07271