Effect of amorphization on the structural stability and reversibility of Ge 2Sb 2Te 5 and oxygen incorporated Ge 2Sb 2Te 5 films

Seung Jong Park, Moon Hyung Jang, Sung Jin Park, Min Ahn, Dam Bi Park, Dae Hong Ko, Mann-Ho Cho

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The structural stability of Ge 2Sb 2Te 5 (GST) and oxygen incorporated Ge 2Sb 2Te 5 (GSTO) films was investigated during crystallization and amorphization processes. Variations in the transition temperature for the amorphized films during recrystallization showed that the amorphized GSTO film loses its enhanced amorphous stability due to oxygen incorporation, while the stability is maintained in the GST film. EXAFS and XANES data suggest that a tetrahedral-like Ge-Te(O) bonding structure is generated, forming crystalline and amorphized GSTO films. Moreover, an ab initio XANES simulation indicates that the tetrahedral-like Ge-Te(O) geometry, which is similar to the atomic configuration of the crystalline structure, exists in the form of ordered domains with medium range ordering in the amorphized film. This effect can lead to large variations in T c and can inhibit reversible phase change characteristics.

Original languageEnglish
Pages (from-to)16527-16533
Number of pages7
JournalJournal of Materials Chemistry
Volume22
Issue number32
DOIs
Publication statusPublished - 2012 Aug 28

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Amorphization
Oxygen
Crystalline materials
Crystallization
Superconducting transition temperature
Geometry

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

Cite this

Park, Seung Jong ; Jang, Moon Hyung ; Park, Sung Jin ; Ahn, Min ; Park, Dam Bi ; Ko, Dae Hong ; Cho, Mann-Ho. / Effect of amorphization on the structural stability and reversibility of Ge 2Sb 2Te 5 and oxygen incorporated Ge 2Sb 2Te 5 films. In: Journal of Materials Chemistry. 2012 ; Vol. 22, No. 32. pp. 16527-16533.
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abstract = "The structural stability of Ge 2Sb 2Te 5 (GST) and oxygen incorporated Ge 2Sb 2Te 5 (GSTO) films was investigated during crystallization and amorphization processes. Variations in the transition temperature for the amorphized films during recrystallization showed that the amorphized GSTO film loses its enhanced amorphous stability due to oxygen incorporation, while the stability is maintained in the GST film. EXAFS and XANES data suggest that a tetrahedral-like Ge-Te(O) bonding structure is generated, forming crystalline and amorphized GSTO films. Moreover, an ab initio XANES simulation indicates that the tetrahedral-like Ge-Te(O) geometry, which is similar to the atomic configuration of the crystalline structure, exists in the form of ordered domains with medium range ordering in the amorphized film. This effect can lead to large variations in T c and can inhibit reversible phase change characteristics.",
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Effect of amorphization on the structural stability and reversibility of Ge 2Sb 2Te 5 and oxygen incorporated Ge 2Sb 2Te 5 films. / Park, Seung Jong; Jang, Moon Hyung; Park, Sung Jin; Ahn, Min; Park, Dam Bi; Ko, Dae Hong; Cho, Mann-Ho.

In: Journal of Materials Chemistry, Vol. 22, No. 32, 28.08.2012, p. 16527-16533.

Research output: Contribution to journalArticle

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T1 - Effect of amorphization on the structural stability and reversibility of Ge 2Sb 2Te 5 and oxygen incorporated Ge 2Sb 2Te 5 films

AU - Park, Seung Jong

AU - Jang, Moon Hyung

AU - Park, Sung Jin

AU - Ahn, Min

AU - Park, Dam Bi

AU - Ko, Dae Hong

AU - Cho, Mann-Ho

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AB - The structural stability of Ge 2Sb 2Te 5 (GST) and oxygen incorporated Ge 2Sb 2Te 5 (GSTO) films was investigated during crystallization and amorphization processes. Variations in the transition temperature for the amorphized films during recrystallization showed that the amorphized GSTO film loses its enhanced amorphous stability due to oxygen incorporation, while the stability is maintained in the GST film. EXAFS and XANES data suggest that a tetrahedral-like Ge-Te(O) bonding structure is generated, forming crystalline and amorphized GSTO films. Moreover, an ab initio XANES simulation indicates that the tetrahedral-like Ge-Te(O) geometry, which is similar to the atomic configuration of the crystalline structure, exists in the form of ordered domains with medium range ordering in the amorphized film. This effect can lead to large variations in T c and can inhibit reversible phase change characteristics.

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