Effect of annealing temperature on liquid crystal alignment using ion-beam irradiated gallium tin oxide as an alignment layer and effective liquid crystal switching in twisted nematic mode

Hae Chang Jeong, Ju Hwan Lee, Sang Bok Jang, Hong Gyu Park, Dae Shik Seo

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We investigated the effect of annealing temperature on liquid crystal (LC) alignment layers. LCs were homogeneously aligned to an ion beam (IB)-irradiated Gallium tin oxide film (GaSnO) at selected high annealing temperatures. To understand the mechanism of LC alignment, SEM and XPS were conducted. At high annealing temperatures, topographical and chemical modifications occurred on the surface. Consequently, the LC molecules were well aligned on the IB-irradiated GaSnO film. To confirm the possible utility of IB-irradiated GaSnO films as alternative LC alignment layers, the electro-optical performance of the new LC cells was tested by assessing the transmittance versus applied voltage and was compared with that of rubbed PI. The threshold voltage of the GaSnOcontaining cell was similar to that of rubbed PI, while amplitude of switching voltage (ASV) of IB-irradiated GaSnO film was larger than that of rubbed PI. This indicated that the LC cell containing IB-irradiated GaSnO should effectively yield excellent color depth. Therefore, IB-irradiated GaSnO annealed at a high annealing temperature could be used an alternative alignment layer for the preparation of LC cells that exhibit stable and effective performance in LC applications.

Original languageEnglish
Pages (from-to)7240-7245
Number of pages6
JournalJournal of Nanoscience and Nanotechnology
Volume17
Issue number10
DOIs
Publication statusPublished - 2017 Oct 1

Fingerprint

gallium oxides
Liquid Crystals
Gallium
Tin oxides
Liquid crystals
Ion beams
tin oxides
ion beams
liquid crystals
alignment
Annealing
Ions
Temperature
annealing
temperature
cells
stannic oxide
gallium oxide
Chemical modification
Electric potential

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

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title = "Effect of annealing temperature on liquid crystal alignment using ion-beam irradiated gallium tin oxide as an alignment layer and effective liquid crystal switching in twisted nematic mode",
abstract = "We investigated the effect of annealing temperature on liquid crystal (LC) alignment layers. LCs were homogeneously aligned to an ion beam (IB)-irradiated Gallium tin oxide film (GaSnO) at selected high annealing temperatures. To understand the mechanism of LC alignment, SEM and XPS were conducted. At high annealing temperatures, topographical and chemical modifications occurred on the surface. Consequently, the LC molecules were well aligned on the IB-irradiated GaSnO film. To confirm the possible utility of IB-irradiated GaSnO films as alternative LC alignment layers, the electro-optical performance of the new LC cells was tested by assessing the transmittance versus applied voltage and was compared with that of rubbed PI. The threshold voltage of the GaSnOcontaining cell was similar to that of rubbed PI, while amplitude of switching voltage (ASV) of IB-irradiated GaSnO film was larger than that of rubbed PI. This indicated that the LC cell containing IB-irradiated GaSnO should effectively yield excellent color depth. Therefore, IB-irradiated GaSnO annealed at a high annealing temperature could be used an alternative alignment layer for the preparation of LC cells that exhibit stable and effective performance in LC applications.",
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Effect of annealing temperature on liquid crystal alignment using ion-beam irradiated gallium tin oxide as an alignment layer and effective liquid crystal switching in twisted nematic mode. / Jeong, Hae Chang; Lee, Ju Hwan; Jang, Sang Bok; Park, Hong Gyu; Seo, Dae Shik.

In: Journal of Nanoscience and Nanotechnology, Vol. 17, No. 10, 01.10.2017, p. 7240-7245.

Research output: Contribution to journalArticle

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AU - Jeong, Hae Chang

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AU - Seo, Dae Shik

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