Effect of assist ion beam voltage on intrinsic stress and optical properties of Ta2O5 thin films deposited by dual ion beam sputtering

S. G. Yoon; S. M. Kang; W. S. Jung; S. W. Kim; D. H. Yoon

doi:10.1016/j.tsf.2007.08.051

Effect of assist ion beam voltage on intrinsic stress and optical properties of Ta₂O₅ thin films deposited by dual ion beam sputtering

S. G. Yoon, S. M. Kang, W. S. Jung, S. W. Kim, D. H. Yoon

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The optical properties and intrinsic stress of Ta₂O₅ thin films deposited by dual ion beam sputtering (DIBS) were studied as a function of the assist ion beam voltage (250-650 V). When the assist ion beam voltage was in the range of 350-450 V, the transmittance at the quarter-wave point reached its highest value (lowest absorption). The refractive index increased to 2.185 as the assist ion beam voltage increased from 250 to 350 V, but decreased as the assist ion beam voltage was further increased from 350 to 650 V.

Original language	English
Pages (from-to)	3582-3585
Number of pages	4
Journal	Thin Solid Films
Volume	516
Issue number	11
DOIs	https://doi.org/10.1016/j.tsf.2007.08.051
Publication status	Published - 2008 Apr 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2007.08.051

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@article{5d092f653b21476fb5ef047bebcca7b1,

title = "Effect of assist ion beam voltage on intrinsic stress and optical properties of Ta2O5 thin films deposited by dual ion beam sputtering",

abstract = "The optical properties and intrinsic stress of Ta2O5 thin films deposited by dual ion beam sputtering (DIBS) were studied as a function of the assist ion beam voltage (250-650 V). When the assist ion beam voltage was in the range of 350-450 V, the transmittance at the quarter-wave point reached its highest value (lowest absorption). The refractive index increased to 2.185 as the assist ion beam voltage increased from 250 to 350 V, but decreased as the assist ion beam voltage was further increased from 350 to 650 V.",

author = "Yoon, {S. G.} and Kang, {S. M.} and Jung, {W. S.} and Kim, {S. W.} and Yoon, {D. H.}",

year = "2008",

month = apr,

day = "1",

doi = "10.1016/j.tsf.2007.08.051",

language = "English",

volume = "516",

pages = "3582--3585",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "11",

}

TY - JOUR

T1 - Effect of assist ion beam voltage on intrinsic stress and optical properties of Ta2O5 thin films deposited by dual ion beam sputtering

AU - Yoon, S. G.

AU - Kang, S. M.

AU - Jung, W. S.

AU - Kim, S. W.

AU - Yoon, D. H.

PY - 2008/4/1

Y1 - 2008/4/1

N2 - The optical properties and intrinsic stress of Ta2O5 thin films deposited by dual ion beam sputtering (DIBS) were studied as a function of the assist ion beam voltage (250-650 V). When the assist ion beam voltage was in the range of 350-450 V, the transmittance at the quarter-wave point reached its highest value (lowest absorption). The refractive index increased to 2.185 as the assist ion beam voltage increased from 250 to 350 V, but decreased as the assist ion beam voltage was further increased from 350 to 650 V.

AB - The optical properties and intrinsic stress of Ta2O5 thin films deposited by dual ion beam sputtering (DIBS) were studied as a function of the assist ion beam voltage (250-650 V). When the assist ion beam voltage was in the range of 350-450 V, the transmittance at the quarter-wave point reached its highest value (lowest absorption). The refractive index increased to 2.185 as the assist ion beam voltage increased from 250 to 350 V, but decreased as the assist ion beam voltage was further increased from 350 to 650 V.

UR - http://www.scopus.com/inward/record.url?scp=40649121513&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=40649121513&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2007.08.051

DO - 10.1016/j.tsf.2007.08.051

M3 - Article

AN - SCOPUS:40649121513

SN - 0040-6090

VL - 516

SP - 3582

EP - 3585

JO - Thin Solid Films

JF - Thin Solid Films

IS - 11

ER -

Effect of assist ion beam voltage on intrinsic stress and optical properties of Ta₂O₅ thin films deposited by dual ion beam sputtering

Abstract

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