Effect of Atomic Layer Deposition Temperature on the Growth Orientation, Morphology, and Electrical, Optical, and Band-Structural Properties of ZnO and Fluorine-Doped ZnO Thin Films

Kyung Mun Kang, Hyung Ho Park

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The deposition temperature has a significant effect on the growth and physicochemical properties of ZnO thin films. However, changes within a low temperature range have not yet been fully investigated. In this study, ZnO and fluorine-doped (F-doped) ZnO (ZnO:F) thin films were synthesized on glass substrates by atomic layer deposition, and the effect of deposition temperature (80-160 °C) on the crystallization behavior and electrical, optical, and band-structural properties of the thin films were analyzed. During deposition, a constant fluorine concentration was maintained in the anionic pulse gas by employing a 200:1 (v/v) mixing ratio of deionized water to hydrofluoric acid. We found that c-axis growth was preferred with ZnO thin films, while a-axis growth was preferred for ZnO:F thin films. An enhancement in the carrier concentration was also observed in both thin films with increase in the deposition temperature. In addition, the optical transmittance of ZnO:F thin films was slightly higher than that of ZnO thin films, and this transmittance decreased with increasing deposition temperature. More significantly, F-doping led to a larger optical band gap in ZnO:F thin films than in ZnO thin films due to an increase in the carrier concentration with F-doping.

Original languageEnglish
Pages (from-to)377-385
Number of pages9
JournalJournal of Physical Chemistry C
Volume122
Issue number1
DOIs
Publication statusPublished - 2018 Jan 11

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Fluorine
Atomic layer deposition
atomic layer epitaxy
fluorine
Structural properties
Thin films
thin films
Temperature
temperature
Carrier concentration
transmittance
Doping (additives)
Hydrofluoric Acid
Hydrofluoric acid
Deionized water
Optical band gaps
hydrofluoric acid
Opacity
mixing ratios
Crystallization

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

Cite this

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abstract = "The deposition temperature has a significant effect on the growth and physicochemical properties of ZnO thin films. However, changes within a low temperature range have not yet been fully investigated. In this study, ZnO and fluorine-doped (F-doped) ZnO (ZnO:F) thin films were synthesized on glass substrates by atomic layer deposition, and the effect of deposition temperature (80-160 °C) on the crystallization behavior and electrical, optical, and band-structural properties of the thin films were analyzed. During deposition, a constant fluorine concentration was maintained in the anionic pulse gas by employing a 200:1 (v/v) mixing ratio of deionized water to hydrofluoric acid. We found that c-axis growth was preferred with ZnO thin films, while a-axis growth was preferred for ZnO:F thin films. An enhancement in the carrier concentration was also observed in both thin films with increase in the deposition temperature. In addition, the optical transmittance of ZnO:F thin films was slightly higher than that of ZnO thin films, and this transmittance decreased with increasing deposition temperature. More significantly, F-doping led to a larger optical band gap in ZnO:F thin films than in ZnO thin films due to an increase in the carrier concentration with F-doping.",
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N2 - The deposition temperature has a significant effect on the growth and physicochemical properties of ZnO thin films. However, changes within a low temperature range have not yet been fully investigated. In this study, ZnO and fluorine-doped (F-doped) ZnO (ZnO:F) thin films were synthesized on glass substrates by atomic layer deposition, and the effect of deposition temperature (80-160 °C) on the crystallization behavior and electrical, optical, and band-structural properties of the thin films were analyzed. During deposition, a constant fluorine concentration was maintained in the anionic pulse gas by employing a 200:1 (v/v) mixing ratio of deionized water to hydrofluoric acid. We found that c-axis growth was preferred with ZnO thin films, while a-axis growth was preferred for ZnO:F thin films. An enhancement in the carrier concentration was also observed in both thin films with increase in the deposition temperature. In addition, the optical transmittance of ZnO:F thin films was slightly higher than that of ZnO thin films, and this transmittance decreased with increasing deposition temperature. More significantly, F-doping led to a larger optical band gap in ZnO:F thin films than in ZnO thin films due to an increase in the carrier concentration with F-doping.

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