Effect of back channel passivation on the operation stability of solution-processed transparent oxide TFTs and ring oscillators

Yong Hoon Kim, Min Suk Oh, Kwang Ho Kim, Hyun Jae Kim, Jeong In Han, Sung Kyu Park

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this paper, the effects of back channel passivation on the electrical stability of solution-processed zinc-tin-oxide thin-film transistors (ZTO TFTs) and ring oscillators have been investigated. Based on solution-processed ZTO TFTs, ring oscillators with an oscillation frequency up to 769 kHz were realized and it was found that the passivation layer had a strong influence on the operation stability of the ring oscillators.

Original languageEnglish
Title of host publication49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011
Pages1166-1169
Number of pages4
Publication statusPublished - 2011
Event49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011 - Los Angeles, CA, United States
Duration: 2011 May 152011 May 20

Publication series

Name49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011
Volume3

Other

Other49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011
CountryUnited States
CityLos Angeles, CA
Period11/5/1511/5/20

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture

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  • Cite this

    Kim, Y. H., Oh, M. S., Kim, K. H., Kim, H. J., Han, J. I., & Park, S. K. (2011). Effect of back channel passivation on the operation stability of solution-processed transparent oxide TFTs and ring oscillators. In 49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011 (pp. 1166-1169). (49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011; Vol. 3).