Effect of Bi 2 O 3 doping on the sintering temperature and microwave dielectric properties of Li Al SiO 4 ceramics

Byoung Jik Jeong, Mi Ri Joung, Sang Hyo Kweon, Jin Seong Kim, Sahn Nahm, Ji Won Choi, Seong Ju Hwang

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11 Citations (Scopus)


When Bi 2O 3 was added to LiAlSiO 4 ceramics, Bi 12SiO 20 secondary phase was formed. Since the melting temperature of Bi 12SiO 20 ceramics is 880°C, the liquid phase is expected to form during sintering and to assist the densification of LiAlSiO 4 ceramics. When 15.0 mol% Bi 2O 3 was added, the LiAlSiO 4 ceramics could be sintered at 900°C, and with 20.0 mol% Bi 2O 3 they could even be sintered at 875°C. The 15.0 mol% Bi 2O 3-doped LiAlSiO 4 ceramics sintered at 900°C exhibited good microwave dielectric properties, namely, a low ε r of 4.3, a high Q × f of 62 430 GHz and a small τ f of -16.21 ppm/ oC.

Original languageEnglish
Pages (from-to)1811-1813
Number of pages3
JournalJournal of the American Ceramic Society
Issue number6
Publication statusPublished - 2012 Jun 1


All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Materials Chemistry

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