Abstract
Phase change characteristics in Gex Sb1-x films with various compositions (Ge20.3 Sb79.7, Ge14.2 Sb85.8, and Ge7.6 Sb92.4) were investigated. A change in crystalline structure indicated that the phase separation occurred at temperatures that exceeded the phase transition temperatures of the films, and this change was dependant on the composition of Gex Sb1-x. The extended X-ray absorption fine structure data showed a change in the bond coordination of Ge from fourfold to threefold during the phase transition. Moreover, the phase separation of Ge occurred gradually with increasing temperature, due to the weak Ge-Sb bonds in the crystalline state. The Raman spectroscopy data showed a suppressed Peierls distortion caused by the Ge-Sb bonds in the crystalline state. The presence of weak Ge-Sb bonds results in instability of the Gex Sb1-x films, resulting in an irreversible transition.
| Original language | English |
|---|---|
| Pages (from-to) | H1078-H1081 |
| Journal | Journal of the Electrochemical Society |
| Volume | 157 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2010 Nov 24 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry
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Effect of bonding characteristics on the instability of gex Sb1-x Films. / Park, S. J.; Jang, M. H.; Park, Sung Jin; Cho, M. H.; Kim, J. K.; Ko, D. H.; Sohn, H. C.
In: Journal of the Electrochemical Society, Vol. 157, No. 12, 24.11.2010, p. H1078-H1081.Research output: Contribution to journal › Article
TY - JOUR
T1 - Effect of bonding characteristics on the instability of gex Sb1-x Films
AU - Park, S. J.
AU - Jang, M. H.
AU - Park, Sung Jin
AU - Cho, M. H.
AU - Kim, J. K.
AU - Ko, D. H.
AU - Sohn, H. C.
PY - 2010/11/24
Y1 - 2010/11/24
N2 - Phase change characteristics in Gex Sb1-x films with various compositions (Ge20.3 Sb79.7, Ge14.2 Sb85.8, and Ge7.6 Sb92.4) were investigated. A change in crystalline structure indicated that the phase separation occurred at temperatures that exceeded the phase transition temperatures of the films, and this change was dependant on the composition of Gex Sb1-x. The extended X-ray absorption fine structure data showed a change in the bond coordination of Ge from fourfold to threefold during the phase transition. Moreover, the phase separation of Ge occurred gradually with increasing temperature, due to the weak Ge-Sb bonds in the crystalline state. The Raman spectroscopy data showed a suppressed Peierls distortion caused by the Ge-Sb bonds in the crystalline state. The presence of weak Ge-Sb bonds results in instability of the Gex Sb1-x films, resulting in an irreversible transition.
AB - Phase change characteristics in Gex Sb1-x films with various compositions (Ge20.3 Sb79.7, Ge14.2 Sb85.8, and Ge7.6 Sb92.4) were investigated. A change in crystalline structure indicated that the phase separation occurred at temperatures that exceeded the phase transition temperatures of the films, and this change was dependant on the composition of Gex Sb1-x. The extended X-ray absorption fine structure data showed a change in the bond coordination of Ge from fourfold to threefold during the phase transition. Moreover, the phase separation of Ge occurred gradually with increasing temperature, due to the weak Ge-Sb bonds in the crystalline state. The Raman spectroscopy data showed a suppressed Peierls distortion caused by the Ge-Sb bonds in the crystalline state. The presence of weak Ge-Sb bonds results in instability of the Gex Sb1-x films, resulting in an irreversible transition.
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U2 - 10.1149/1.3491738
DO - 10.1149/1.3491738
M3 - Article
AN - SCOPUS:78449302445
VL - 157
SP - H1078-H1081
JO - Journal of the Electrochemical Society
JF - Journal of the Electrochemical Society
SN - 0013-4651
IS - 12
ER -