Effect of bonding characteristics on the instability of gex Sb1-x Films

S. J. Park, M. H. Jang, Sung Jin Park, M. H. Cho, J. K. Kim, D. H. Ko, H. C. Sohn

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Phase change characteristics in Gex Sb1-x films with various compositions (Ge20.3 Sb79.7, Ge14.2 Sb85.8, and Ge7.6 Sb92.4) were investigated. A change in crystalline structure indicated that the phase separation occurred at temperatures that exceeded the phase transition temperatures of the films, and this change was dependant on the composition of Gex Sb1-x. The extended X-ray absorption fine structure data showed a change in the bond coordination of Ge from fourfold to threefold during the phase transition. Moreover, the phase separation of Ge occurred gradually with increasing temperature, due to the weak Ge-Sb bonds in the crystalline state. The Raman spectroscopy data showed a suppressed Peierls distortion caused by the Ge-Sb bonds in the crystalline state. The presence of weak Ge-Sb bonds results in instability of the Gex Sb1-x films, resulting in an irreversible transition.

Original languageEnglish
Pages (from-to)H1078-H1081
JournalJournal of the Electrochemical Society
Volume157
Issue number12
DOIs
Publication statusPublished - 2010 Nov 24

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Crystalline materials
Phase separation
Phase transitions
X ray absorption
Chemical analysis
Superconducting transition temperature
Raman spectroscopy
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

Park, S. J. ; Jang, M. H. ; Park, Sung Jin ; Cho, M. H. ; Kim, J. K. ; Ko, D. H. ; Sohn, H. C. / Effect of bonding characteristics on the instability of gex Sb1-x Films. In: Journal of the Electrochemical Society. 2010 ; Vol. 157, No. 12. pp. H1078-H1081.
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Effect of bonding characteristics on the instability of gex Sb1-x Films. / Park, S. J.; Jang, M. H.; Park, Sung Jin; Cho, M. H.; Kim, J. K.; Ko, D. H.; Sohn, H. C.

In: Journal of the Electrochemical Society, Vol. 157, No. 12, 24.11.2010, p. H1078-H1081.

Research output: Contribution to journalArticle

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AU - Jang, M. H.

AU - Park, Sung Jin

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