Effect of boron and silicon doping on the surface and electrical properties of diamond like carbon films by magnetron sputtering technique

Chang Sun Park, Sun Gyu Choi, Jin Nyoung Jang, Mun Pyo Hong, Kwang Ho Kwon, Hyung-Ho Park

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

To improve the surface and electrical properties, silicon (Si) and boron (B) were co-doped in diamond-like carbon (DLC) films prepared on silica substrates by RF magnetron sputtering. In the deposition of a Si, B co-doped DLC film, Si content was controlled by the number of intrinsic Si wafer piece and B content by B target power. The surface roughness and resistivity of film increased by increment in the CC sp 3 bond content due to added Si and the surface roughness and resistivity of film decreased by decrement in the CC sp 2 bond content due to added B. A CC sp 3 bond content in the Si, B co-doped DLC films decreased from 47.4% to 36.5% with increasing B target power compared with from 46.7% to 23.9% in case of the only B doped DLC films. From this result, it can be said that Si can suppress a graphitization of DLC with presence of B. However, the surface roughness and resistivity values of Si, B co-doped DLC films decreased similarly as in only B doped DLC films with an increase in the B target power. These results were caused the SiB sp 3 bonds formed smaller than Si sp 3 bonds with increase in the B target power as a result of the B-doping effect. In order to minimize the reduction in sp 3 bond content over the decrease roughness and resistivity, DLC films were prepared by Si, B co-doping. So, these films can be applied in chemical sensing, electro-synthesis, and electrochemical-based toxic waste detection, remediation, and so on at industrial level.

Original languageEnglish
Pages (from-to)131-134
Number of pages4
JournalSurface and Coatings Technology
Volume231
DOIs
Publication statusPublished - 2013 Sep 25

Fingerprint

Diamond like carbon films
Boron
Silicon
Magnetron sputtering
surface properties
Surface properties
magnetron sputtering
boron
Electric properties
diamonds
electrical properties
Doping (additives)
carbon
silicon
Surface roughness
surface roughness
electrical resistivity
Toxic materials
electrochemical synthesis
Graphitization

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Park, Chang Sun ; Choi, Sun Gyu ; Jang, Jin Nyoung ; Hong, Mun Pyo ; Kwon, Kwang Ho ; Park, Hyung-Ho. / Effect of boron and silicon doping on the surface and electrical properties of diamond like carbon films by magnetron sputtering technique. In: Surface and Coatings Technology. 2013 ; Vol. 231. pp. 131-134.
@article{8f26b79f000b459ca5ec05bee6aa8b77,
title = "Effect of boron and silicon doping on the surface and electrical properties of diamond like carbon films by magnetron sputtering technique",
abstract = "To improve the surface and electrical properties, silicon (Si) and boron (B) were co-doped in diamond-like carbon (DLC) films prepared on silica substrates by RF magnetron sputtering. In the deposition of a Si, B co-doped DLC film, Si content was controlled by the number of intrinsic Si wafer piece and B content by B target power. The surface roughness and resistivity of film increased by increment in the CC sp 3 bond content due to added Si and the surface roughness and resistivity of film decreased by decrement in the CC sp 2 bond content due to added B. A CC sp 3 bond content in the Si, B co-doped DLC films decreased from 47.4{\%} to 36.5{\%} with increasing B target power compared with from 46.7{\%} to 23.9{\%} in case of the only B doped DLC films. From this result, it can be said that Si can suppress a graphitization of DLC with presence of B. However, the surface roughness and resistivity values of Si, B co-doped DLC films decreased similarly as in only B doped DLC films with an increase in the B target power. These results were caused the SiB sp 3 bonds formed smaller than Si sp 3 bonds with increase in the B target power as a result of the B-doping effect. In order to minimize the reduction in sp 3 bond content over the decrease roughness and resistivity, DLC films were prepared by Si, B co-doping. So, these films can be applied in chemical sensing, electro-synthesis, and electrochemical-based toxic waste detection, remediation, and so on at industrial level.",
author = "Park, {Chang Sun} and Choi, {Sun Gyu} and Jang, {Jin Nyoung} and Hong, {Mun Pyo} and Kwon, {Kwang Ho} and Hyung-Ho Park",
year = "2013",
month = "9",
day = "25",
doi = "10.1016/j.surfcoat.2012.01.014",
language = "English",
volume = "231",
pages = "131--134",
journal = "Surface and Coatings Technology",
issn = "0257-8972",
publisher = "Elsevier",

}

Effect of boron and silicon doping on the surface and electrical properties of diamond like carbon films by magnetron sputtering technique. / Park, Chang Sun; Choi, Sun Gyu; Jang, Jin Nyoung; Hong, Mun Pyo; Kwon, Kwang Ho; Park, Hyung-Ho.

In: Surface and Coatings Technology, Vol. 231, 25.09.2013, p. 131-134.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effect of boron and silicon doping on the surface and electrical properties of diamond like carbon films by magnetron sputtering technique

AU - Park, Chang Sun

AU - Choi, Sun Gyu

AU - Jang, Jin Nyoung

AU - Hong, Mun Pyo

AU - Kwon, Kwang Ho

AU - Park, Hyung-Ho

PY - 2013/9/25

Y1 - 2013/9/25

N2 - To improve the surface and electrical properties, silicon (Si) and boron (B) were co-doped in diamond-like carbon (DLC) films prepared on silica substrates by RF magnetron sputtering. In the deposition of a Si, B co-doped DLC film, Si content was controlled by the number of intrinsic Si wafer piece and B content by B target power. The surface roughness and resistivity of film increased by increment in the CC sp 3 bond content due to added Si and the surface roughness and resistivity of film decreased by decrement in the CC sp 2 bond content due to added B. A CC sp 3 bond content in the Si, B co-doped DLC films decreased from 47.4% to 36.5% with increasing B target power compared with from 46.7% to 23.9% in case of the only B doped DLC films. From this result, it can be said that Si can suppress a graphitization of DLC with presence of B. However, the surface roughness and resistivity values of Si, B co-doped DLC films decreased similarly as in only B doped DLC films with an increase in the B target power. These results were caused the SiB sp 3 bonds formed smaller than Si sp 3 bonds with increase in the B target power as a result of the B-doping effect. In order to minimize the reduction in sp 3 bond content over the decrease roughness and resistivity, DLC films were prepared by Si, B co-doping. So, these films can be applied in chemical sensing, electro-synthesis, and electrochemical-based toxic waste detection, remediation, and so on at industrial level.

AB - To improve the surface and electrical properties, silicon (Si) and boron (B) were co-doped in diamond-like carbon (DLC) films prepared on silica substrates by RF magnetron sputtering. In the deposition of a Si, B co-doped DLC film, Si content was controlled by the number of intrinsic Si wafer piece and B content by B target power. The surface roughness and resistivity of film increased by increment in the CC sp 3 bond content due to added Si and the surface roughness and resistivity of film decreased by decrement in the CC sp 2 bond content due to added B. A CC sp 3 bond content in the Si, B co-doped DLC films decreased from 47.4% to 36.5% with increasing B target power compared with from 46.7% to 23.9% in case of the only B doped DLC films. From this result, it can be said that Si can suppress a graphitization of DLC with presence of B. However, the surface roughness and resistivity values of Si, B co-doped DLC films decreased similarly as in only B doped DLC films with an increase in the B target power. These results were caused the SiB sp 3 bonds formed smaller than Si sp 3 bonds with increase in the B target power as a result of the B-doping effect. In order to minimize the reduction in sp 3 bond content over the decrease roughness and resistivity, DLC films were prepared by Si, B co-doping. So, these films can be applied in chemical sensing, electro-synthesis, and electrochemical-based toxic waste detection, remediation, and so on at industrial level.

UR - http://www.scopus.com/inward/record.url?scp=84882920327&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84882920327&partnerID=8YFLogxK

U2 - 10.1016/j.surfcoat.2012.01.014

DO - 10.1016/j.surfcoat.2012.01.014

M3 - Article

AN - SCOPUS:84882920327

VL - 231

SP - 131

EP - 134

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

SN - 0257-8972

ER -