Effect of boron dose and post-thermal budget on electrical properties of MOS-capacitors with a W/WN x /poly-Si 1-x Ge x gate stack

Sung Kwan Kang, Byoung Gi Min, Jae Jin Kim, Dae Hong Ko, Han Byul Kang, Cheol Woong Yang, Tae Hang Ahn

Research output: Contribution to journalArticle

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Abstract

We investigated the effect of boron dosage and post-thermal budget on the electrical properties such as capacitance-voltage (C-V), gate leakage current-voltage (I-V), and charge-to-breakdown (Q BD ) of metal oxide semiconductor (CMOS) capacitors with W/WN x /poly-Si 1-x Ge x gates stack. The C-V curve of the MOS-capacitors with the W/WN x /poly-Si 0.4 Ge 0.6 stack had a lower flatband voltage (V FB ) and showed less gate depletion effect (GDE), compared with that of the W/WN x /poly-Si 0.8 Ge 0.2 stack due to the decrease of gate electrode work function and the increase of dopant activation rate with the increase of Ge content, respectively. Although the I-V curves of MOS-capacitors with W/WN x /poly-Si 1-x Ge x gates stack exhibited similar behaviors regardless of Ge content, the beginning of conduction in the I-V curves accelerated with the increase of Ge content due to the decrease of the gate electrode work function. The Q BD of W/WN x /poly-Si 0.4 Ge 0.6 gates stack was much higher than that of the W/WN x /poly-Si gates stack due to the reduced boron penetration in the gate oxide. We also found that annealing temperatures between 800 and 850°C has no influence on the electrical properties of MOS capacitors with W/WN x /poly-Si 1-x Ge x gates stack.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume151
Issue number1
DOIs
Publication statusPublished - 2004 Feb 16

Fingerprint

MOS capacitors
Boron
Polysilicon
Electric properties
Electric potential
Capacitance
Electrodes
Hot Temperature
Leakage currents
Oxides
Capacitors
Metals
Chemical activation
Doping (additives)
Annealing

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

Kang, Sung Kwan ; Min, Byoung Gi ; Kim, Jae Jin ; Ko, Dae Hong ; Kang, Han Byul ; Yang, Cheol Woong ; Ahn, Tae Hang. / Effect of boron dose and post-thermal budget on electrical properties of MOS-capacitors with a W/WN x /poly-Si 1-x Ge x gate stack In: Journal of the Electrochemical Society. 2004 ; Vol. 151, No. 1.
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abstract = "We investigated the effect of boron dosage and post-thermal budget on the electrical properties such as capacitance-voltage (C-V), gate leakage current-voltage (I-V), and charge-to-breakdown (Q BD ) of metal oxide semiconductor (CMOS) capacitors with W/WN x /poly-Si 1-x Ge x gates stack. The C-V curve of the MOS-capacitors with the W/WN x /poly-Si 0.4 Ge 0.6 stack had a lower flatband voltage (V FB ) and showed less gate depletion effect (GDE), compared with that of the W/WN x /poly-Si 0.8 Ge 0.2 stack due to the decrease of gate electrode work function and the increase of dopant activation rate with the increase of Ge content, respectively. Although the I-V curves of MOS-capacitors with W/WN x /poly-Si 1-x Ge x gates stack exhibited similar behaviors regardless of Ge content, the beginning of conduction in the I-V curves accelerated with the increase of Ge content due to the decrease of the gate electrode work function. The Q BD of W/WN x /poly-Si 0.4 Ge 0.6 gates stack was much higher than that of the W/WN x /poly-Si gates stack due to the reduced boron penetration in the gate oxide. We also found that annealing temperatures between 800 and 850°C has no influence on the electrical properties of MOS capacitors with W/WN x /poly-Si 1-x Ge x gates stack.",
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Effect of boron dose and post-thermal budget on electrical properties of MOS-capacitors with a W/WN x /poly-Si 1-x Ge x gate stack . / Kang, Sung Kwan; Min, Byoung Gi; Kim, Jae Jin; Ko, Dae Hong; Kang, Han Byul; Yang, Cheol Woong; Ahn, Tae Hang.

In: Journal of the Electrochemical Society, Vol. 151, No. 1, 16.02.2004.

Research output: Contribution to journalArticle

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AU - Kang, Sung Kwan

AU - Min, Byoung Gi

AU - Kim, Jae Jin

AU - Ko, Dae Hong

AU - Kang, Han Byul

AU - Yang, Cheol Woong

AU - Ahn, Tae Hang

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N2 - We investigated the effect of boron dosage and post-thermal budget on the electrical properties such as capacitance-voltage (C-V), gate leakage current-voltage (I-V), and charge-to-breakdown (Q BD ) of metal oxide semiconductor (CMOS) capacitors with W/WN x /poly-Si 1-x Ge x gates stack. The C-V curve of the MOS-capacitors with the W/WN x /poly-Si 0.4 Ge 0.6 stack had a lower flatband voltage (V FB ) and showed less gate depletion effect (GDE), compared with that of the W/WN x /poly-Si 0.8 Ge 0.2 stack due to the decrease of gate electrode work function and the increase of dopant activation rate with the increase of Ge content, respectively. Although the I-V curves of MOS-capacitors with W/WN x /poly-Si 1-x Ge x gates stack exhibited similar behaviors regardless of Ge content, the beginning of conduction in the I-V curves accelerated with the increase of Ge content due to the decrease of the gate electrode work function. The Q BD of W/WN x /poly-Si 0.4 Ge 0.6 gates stack was much higher than that of the W/WN x /poly-Si gates stack due to the reduced boron penetration in the gate oxide. We also found that annealing temperatures between 800 and 850°C has no influence on the electrical properties of MOS capacitors with W/WN x /poly-Si 1-x Ge x gates stack.

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