Effect of boron dose and post-thermal budget on electrical properties of MOS-capacitors with a W/WNx/poly-Si1-xGex gate stack

Sung Kwan Kang, Byoung Gi Min, Jae Jin Kim, Dae Hong Ko, Han Byul Kang, Cheol Woong Yang, Tae Hang Ahn

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Abstract

We investigated the effect of boron dosage and post-thermal budget on the electrical properties such as capacitance-voltage (C-V), gate leakage current-voltage (I-V), and charge-to-breakdown (QBD) of metal oxide semiconductor (CMOS) capacitors with W/WNx/poly-Si1-xGex gates stack. The C-V curve of the MOS-capacitors with the W/WNx/poly-Si0.4Ge0.6 stack had a lower flatband voltage (VFB) and showed less gate depletion effect (GDE), compared with that of the W/WNx/poly-Si0.8Ge0.2 stack due to the decrease of gate electrode work function and the increase of dopant activation rate with the increase of Ge content, respectively. Although the I-V curves of MOS-capacitors with W/WNx/poly-Si1-xGex gates stack exhibited similar behaviors regardless of Ge content, the beginning of conduction in the I-V curves accelerated with the increase of Ge content due to the decrease of the gate electrode work function. The QBD of W/WNx/poly-Si0.4Ge0.6 gates stack was much higher than that of the W/WNx/poly-Si gates stack due to the reduced boron penetration in the gate oxide. We also found that annealing temperatures between 800 and 850°C has no influence on the electrical properties of MOS capacitors with W/WNx/poly-Si1-xGex gates stack.

Original languageEnglish
Pages (from-to)G67-G70
JournalJournal of the Electrochemical Society
Volume151
Issue number1
DOIs
Publication statusPublished - 2004 Feb 16

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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