Abstract
The Ga-doped ZnO thin films were deposited on glass substrate by sputtering and annealed at 350 °C in hydrogen atmosphere for 1 h. The optical bandgap of thin films showed the lower blueshift than the theoretical value of the Burstein-Moss (BM) effect. The shift of bandgap was dependent on the carrier concentration and acquired by combining the nonparabolic BM effect and bandgap narrowing (BGN). The modified BM effect equation was proposed to substitute the nonparabolic BM effect and BGN. The exponent in the modified BM equation was affected by carrier concentration and it was decreased with carrier concentration.
| Original language | English |
|---|---|
| Pages (from-to) | 6304-6307 |
| Number of pages | 4 |
| Journal | Thin Solid Films |
| Volume | 518 |
| Issue number | 22 |
| DOIs | |
| Publication status | Published - 2010 Sep 1 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
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Kim, C. E., Moon, P., Kim, S., Myoung, J. M., Jang, H. W., Bang, J., & Yun, I. (2010). Effect of carrier concentration on optical bandgap shift in ZnO:Ga thin films. Thin Solid Films, 518(22), 6304-6307. https://doi.org/10.1016/j.tsf.2010.03.042