Effect of carrier concentration on optical bandgap shift in ZnO:Ga thin films

Chang Eun Kim; Pyung Moon; Sungyeon Kim; Jae Min Myoung; Hyeon Woo Jang; Jungsik Bang; Ilgu Yun

doi:10.1016/j.tsf.2010.03.042

Effect of carrier concentration on optical bandgap shift in ZnO:Ga thin films

Chang Eun Kim, Pyung Moon, Sungyeon Kim, Jae Min Myoung, Hyeon Woo Jang, Jungsik Bang, Ilgu Yun

Research output: Contribution to journal › Article › peer-review

141 Citations (Scopus)

Abstract

The Ga-doped ZnO thin films were deposited on glass substrate by sputtering and annealed at 350 °C in hydrogen atmosphere for 1 h. The optical bandgap of thin films showed the lower blueshift than the theoretical value of the Burstein-Moss (BM) effect. The shift of bandgap was dependent on the carrier concentration and acquired by combining the nonparabolic BM effect and bandgap narrowing (BGN). The modified BM effect equation was proposed to substitute the nonparabolic BM effect and BGN. The exponent in the modified BM equation was affected by carrier concentration and it was decreased with carrier concentration.

Original language	English
Pages (from-to)	6304-6307
Number of pages	4
Journal	Thin Solid Films
Volume	518
Issue number	22
DOIs	https://doi.org/10.1016/j.tsf.2010.03.042
Publication status	Published - 2010 Sep 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2010.03.042

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abstract = "The Ga-doped ZnO thin films were deposited on glass substrate by sputtering and annealed at 350 °C in hydrogen atmosphere for 1 h. The optical bandgap of thin films showed the lower blueshift than the theoretical value of the Burstein-Moss (BM) effect. The shift of bandgap was dependent on the carrier concentration and acquired by combining the nonparabolic BM effect and bandgap narrowing (BGN). The modified BM effect equation was proposed to substitute the nonparabolic BM effect and BGN. The exponent in the modified BM equation was affected by carrier concentration and it was decreased with carrier concentration.",

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AU - Kim, Chang Eun

AU - Moon, Pyung

AU - Kim, Sungyeon

AU - Myoung, Jae Min

AU - Jang, Hyeon Woo

AU - Bang, Jungsik

AU - Yun, Ilgu

PY - 2010/9/1

Y1 - 2010/9/1

N2 - The Ga-doped ZnO thin films were deposited on glass substrate by sputtering and annealed at 350 °C in hydrogen atmosphere for 1 h. The optical bandgap of thin films showed the lower blueshift than the theoretical value of the Burstein-Moss (BM) effect. The shift of bandgap was dependent on the carrier concentration and acquired by combining the nonparabolic BM effect and bandgap narrowing (BGN). The modified BM effect equation was proposed to substitute the nonparabolic BM effect and BGN. The exponent in the modified BM equation was affected by carrier concentration and it was decreased with carrier concentration.

AB - The Ga-doped ZnO thin films were deposited on glass substrate by sputtering and annealed at 350 °C in hydrogen atmosphere for 1 h. The optical bandgap of thin films showed the lower blueshift than the theoretical value of the Burstein-Moss (BM) effect. The shift of bandgap was dependent on the carrier concentration and acquired by combining the nonparabolic BM effect and bandgap narrowing (BGN). The modified BM effect equation was proposed to substitute the nonparabolic BM effect and BGN. The exponent in the modified BM equation was affected by carrier concentration and it was decreased with carrier concentration.

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Effect of carrier concentration on optical bandgap shift in ZnO:Ga thin films

Abstract

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