Effect of charge trapping/detrapping on threshold voltage shift of IGZO TFTs under AC bias stress

Sun Jae Kim, Soo Yeon Lee, Young Wook Lee, Seung Hee Kuk, Jang Yeon Kwon, Min Koo Han

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

We have investigated the dependency of alternating current (AC) stress duty ratio on the stability of indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs). As the duty ratio increases from 0.25 to 0.75, threshold voltage (V TH) shift under the AC gate bias stress was increased from 4.10 V to 5.01 V, without degradation of subthreshold slope and mobility. The dominant mechanism of V TH shift was considered the charge trapping and V TH shift along with time was well fitted to a stretched-exponential model. The V TH shift was suppressed with a reduction of trap density by employing N 2O plasma treatment on the gate insulator.

Original languageEnglish
Pages (from-to)H108-H110
JournalElectrochemical and Solid-State Letters
Volume15
Issue number4
DOIs
Publication statusPublished - 2012 Feb 27

Fingerprint

Zinc Oxide
gallium oxides
Charge trapping
Gallium
Indium
Bias currents
Thin film transistors
Zinc oxide
Threshold voltage
threshold voltage
zinc oxides
Oxide films
indium
alternating current
transistors
trapping
shift
thin films
stress ratio
Plasmas

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

Kim, Sun Jae ; Lee, Soo Yeon ; Lee, Young Wook ; Kuk, Seung Hee ; Kwon, Jang Yeon ; Han, Min Koo. / Effect of charge trapping/detrapping on threshold voltage shift of IGZO TFTs under AC bias stress. In: Electrochemical and Solid-State Letters. 2012 ; Vol. 15, No. 4. pp. H108-H110.
@article{2096e7ef3487408783400e9713a44541,
title = "Effect of charge trapping/detrapping on threshold voltage shift of IGZO TFTs under AC bias stress",
abstract = "We have investigated the dependency of alternating current (AC) stress duty ratio on the stability of indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs). As the duty ratio increases from 0.25 to 0.75, threshold voltage (V TH) shift under the AC gate bias stress was increased from 4.10 V to 5.01 V, without degradation of subthreshold slope and mobility. The dominant mechanism of V TH shift was considered the charge trapping and V TH shift along with time was well fitted to a stretched-exponential model. The V TH shift was suppressed with a reduction of trap density by employing N 2O plasma treatment on the gate insulator.",
author = "Kim, {Sun Jae} and Lee, {Soo Yeon} and Lee, {Young Wook} and Kuk, {Seung Hee} and Kwon, {Jang Yeon} and Han, {Min Koo}",
year = "2012",
month = "2",
day = "27",
doi = "10.1149/2.026204esl",
language = "English",
volume = "15",
pages = "H108--H110",
journal = "Electrochemical and Solid-State Letters",
issn = "1099-0062",
publisher = "Electrochemical Society, Inc.",
number = "4",

}

Effect of charge trapping/detrapping on threshold voltage shift of IGZO TFTs under AC bias stress. / Kim, Sun Jae; Lee, Soo Yeon; Lee, Young Wook; Kuk, Seung Hee; Kwon, Jang Yeon; Han, Min Koo.

In: Electrochemical and Solid-State Letters, Vol. 15, No. 4, 27.02.2012, p. H108-H110.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effect of charge trapping/detrapping on threshold voltage shift of IGZO TFTs under AC bias stress

AU - Kim, Sun Jae

AU - Lee, Soo Yeon

AU - Lee, Young Wook

AU - Kuk, Seung Hee

AU - Kwon, Jang Yeon

AU - Han, Min Koo

PY - 2012/2/27

Y1 - 2012/2/27

N2 - We have investigated the dependency of alternating current (AC) stress duty ratio on the stability of indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs). As the duty ratio increases from 0.25 to 0.75, threshold voltage (V TH) shift under the AC gate bias stress was increased from 4.10 V to 5.01 V, without degradation of subthreshold slope and mobility. The dominant mechanism of V TH shift was considered the charge trapping and V TH shift along with time was well fitted to a stretched-exponential model. The V TH shift was suppressed with a reduction of trap density by employing N 2O plasma treatment on the gate insulator.

AB - We have investigated the dependency of alternating current (AC) stress duty ratio on the stability of indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs). As the duty ratio increases from 0.25 to 0.75, threshold voltage (V TH) shift under the AC gate bias stress was increased from 4.10 V to 5.01 V, without degradation of subthreshold slope and mobility. The dominant mechanism of V TH shift was considered the charge trapping and V TH shift along with time was well fitted to a stretched-exponential model. The V TH shift was suppressed with a reduction of trap density by employing N 2O plasma treatment on the gate insulator.

UR - http://www.scopus.com/inward/record.url?scp=84863182904&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863182904&partnerID=8YFLogxK

U2 - 10.1149/2.026204esl

DO - 10.1149/2.026204esl

M3 - Article

AN - SCOPUS:84863182904

VL - 15

SP - H108-H110

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

IS - 4

ER -