Effect of charge trapping/detrapping on threshold voltage shift of IGZO TFTs under AC bias stress

Sun Jae Kim, Soo Yeon Lee, Young Wook Lee, Seung Hee Kuk, Jang Yeon Kwon, Min Koo Han

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

We have investigated the dependency of alternating current (AC) stress duty ratio on the stability of indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs). As the duty ratio increases from 0.25 to 0.75, threshold voltage (V TH) shift under the AC gate bias stress was increased from 4.10 V to 5.01 V, without degradation of subthreshold slope and mobility. The dominant mechanism of V TH shift was considered the charge trapping and V TH shift along with time was well fitted to a stretched-exponential model. The V TH shift was suppressed with a reduction of trap density by employing N 2O plasma treatment on the gate insulator.

Original languageEnglish
Pages (from-to)H108-H110
JournalElectrochemical and Solid-State Letters
Volume15
Issue number4
DOIs
Publication statusPublished - 2012 Feb 27

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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