We have investigated the dependency of alternating current (AC) stress duty ratio on the stability of indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs). As the duty ratio increases from 0.25 to 0.75, threshold voltage (V TH) shift under the AC gate bias stress was increased from 4.10 V to 5.01 V, without degradation of subthreshold slope and mobility. The dominant mechanism of V TH shift was considered the charge trapping and V TH shift along with time was well fitted to a stretched-exponential model. The V TH shift was suppressed with a reduction of trap density by employing N 2O plasma treatment on the gate insulator.
|Journal||Electrochemical and Solid-State Letters|
|Publication status||Published - 2012|
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering