Effect of charge trapping/detrapping on threshold voltage shift of IGZO TFTs under AC bias stress

Sun Jae Kim; Soo Yeon Lee; Young Wook Lee; Seung Hee Kuk; Jang Yeon Kwon; Min Koo Han

doi:10.1149/2.026204esl

Effect of charge trapping/detrapping on threshold voltage shift of IGZO TFTs under AC bias stress

Sun Jae Kim, Soo Yeon Lee, Young Wook Lee, Seung Hee Kuk, Jang Yeon Kwon, Min Koo Han

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

We have investigated the dependency of alternating current (AC) stress duty ratio on the stability of indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs). As the duty ratio increases from 0.25 to 0.75, threshold voltage (V _TH) shift under the AC gate bias stress was increased from 4.10 V to 5.01 V, without degradation of subthreshold slope and mobility. The dominant mechanism of V _TH shift was considered the charge trapping and V _TH shift along with time was well fitted to a stretched-exponential model. The V _TH shift was suppressed with a reduction of trap density by employing N ₂O plasma treatment on the gate insulator.

Original language	English
Pages (from-to)	H108-H110
Journal	Electrochemical and Solid-State Letters
Volume	15
Issue number	4
DOIs	https://doi.org/10.1149/2.026204esl
Publication status	Published - 2012

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/2.026204esl

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abstract = "We have investigated the dependency of alternating current (AC) stress duty ratio on the stability of indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs). As the duty ratio increases from 0.25 to 0.75, threshold voltage (V TH) shift under the AC gate bias stress was increased from 4.10 V to 5.01 V, without degradation of subthreshold slope and mobility. The dominant mechanism of V TH shift was considered the charge trapping and V TH shift along with time was well fitted to a stretched-exponential model. The V TH shift was suppressed with a reduction of trap density by employing N 2O plasma treatment on the gate insulator.",

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T1 - Effect of charge trapping/detrapping on threshold voltage shift of IGZO TFTs under AC bias stress

AU - Kim, Sun Jae

AU - Lee, Soo Yeon

AU - Lee, Young Wook

AU - Kuk, Seung Hee

AU - Kwon, Jang Yeon

AU - Han, Min Koo

PY - 2012

Y1 - 2012

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AB - We have investigated the dependency of alternating current (AC) stress duty ratio on the stability of indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs). As the duty ratio increases from 0.25 to 0.75, threshold voltage (V TH) shift under the AC gate bias stress was increased from 4.10 V to 5.01 V, without degradation of subthreshold slope and mobility. The dominant mechanism of V TH shift was considered the charge trapping and V TH shift along with time was well fitted to a stretched-exponential model. The V TH shift was suppressed with a reduction of trap density by employing N 2O plasma treatment on the gate insulator.

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Effect of charge trapping/detrapping on threshold voltage shift of IGZO TFTs under AC bias stress

Abstract

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