Effect of charge trapping/detrapping on threshold voltage shift of IGZO TFTs under AC bias stress

Sun Jae Kim, Soo Yeon Lee, Young Wook Lee, Seung Hee Kuk, Jang Yeon Kwon, Min Koo Han

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We have investigated the dependency of alternating current (AC) stress duty ratio on the stability of indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs). As the duty ratio increases from 0.25 to 0.75, threshold voltage (V TH) shift under the AC gate bias stress was increased from 4.10 V to 5.01 V, without degradation of subthreshold slope and mobility. The dominant mechanism of V TH shift was considered the charge trapping and V TH shift along with time was well fitted to a stretched-exponential model. The V TH shift was suppressed with a reduction of trap density by employing N 2O plasma treatment on the gate insulator.

Original languageEnglish
Pages (from-to)H108-H110
JournalElectrochemical and Solid-State Letters
Issue number4
Publication statusPublished - 2012 Feb 27


All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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