Effect of chemical bonding states in TaOx base layers on rectifying bipolar resistive switching characteristics

Jonggi Kim, In Su Mok, Youngjae Kim, Kyumin Lee, Dae Hong Ko, Hyunchul Sohn

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

In this study, the authors investigated the rectifying bipolar resistive switching characteristics of Pt/HfO2/TaOx/Pt heterostacks with respect to the chemical bonding states of the TaOx base layer and the physical properties of the insulator layer. The authors demonstrated that the migration of oxygen ions at the interface between the HfO2 insulator layer and the TaOx base layer produced the rectifying bipolar resistive switching, and the switching current could be controlled via the oxygen concentration in the TaOx layer. They also observed that the current at the high-resistance state decreased with increasing thickness of the HfO2 insulator layer. Rectifying bipolar resistive switching behavior was additionally demonstrated by using an Al2O3 layer as an insulator instead of HfO2.

Original languageEnglish
Article number032206
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume31
Issue number3
DOIs
Publication statusPublished - 2013 May

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insulators
Oxygen
Physical properties
Ions
high resistance
oxygen ions
physical properties
oxygen

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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title = "Effect of chemical bonding states in TaOx base layers on rectifying bipolar resistive switching characteristics",
abstract = "In this study, the authors investigated the rectifying bipolar resistive switching characteristics of Pt/HfO2/TaOx/Pt heterostacks with respect to the chemical bonding states of the TaOx base layer and the physical properties of the insulator layer. The authors demonstrated that the migration of oxygen ions at the interface between the HfO2 insulator layer and the TaOx base layer produced the rectifying bipolar resistive switching, and the switching current could be controlled via the oxygen concentration in the TaOx layer. They also observed that the current at the high-resistance state decreased with increasing thickness of the HfO2 insulator layer. Rectifying bipolar resistive switching behavior was additionally demonstrated by using an Al2O3 layer as an insulator instead of HfO2.",
author = "Jonggi Kim and Mok, {In Su} and Youngjae Kim and Kyumin Lee and Ko, {Dae Hong} and Hyunchul Sohn",
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TY - JOUR

T1 - Effect of chemical bonding states in TaOx base layers on rectifying bipolar resistive switching characteristics

AU - Kim, Jonggi

AU - Mok, In Su

AU - Kim, Youngjae

AU - Lee, Kyumin

AU - Ko, Dae Hong

AU - Sohn, Hyunchul

PY - 2013/5

Y1 - 2013/5

N2 - In this study, the authors investigated the rectifying bipolar resistive switching characteristics of Pt/HfO2/TaOx/Pt heterostacks with respect to the chemical bonding states of the TaOx base layer and the physical properties of the insulator layer. The authors demonstrated that the migration of oxygen ions at the interface between the HfO2 insulator layer and the TaOx base layer produced the rectifying bipolar resistive switching, and the switching current could be controlled via the oxygen concentration in the TaOx layer. They also observed that the current at the high-resistance state decreased with increasing thickness of the HfO2 insulator layer. Rectifying bipolar resistive switching behavior was additionally demonstrated by using an Al2O3 layer as an insulator instead of HfO2.

AB - In this study, the authors investigated the rectifying bipolar resistive switching characteristics of Pt/HfO2/TaOx/Pt heterostacks with respect to the chemical bonding states of the TaOx base layer and the physical properties of the insulator layer. The authors demonstrated that the migration of oxygen ions at the interface between the HfO2 insulator layer and the TaOx base layer produced the rectifying bipolar resistive switching, and the switching current could be controlled via the oxygen concentration in the TaOx layer. They also observed that the current at the high-resistance state decreased with increasing thickness of the HfO2 insulator layer. Rectifying bipolar resistive switching behavior was additionally demonstrated by using an Al2O3 layer as an insulator instead of HfO2.

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