Effect of cross capacitance in three-junction single-electron transistors

Jinhee Kim, Sangchul Oh, Kyung-hwa Yoo

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The transport properties of an (Formula presented) three-junction single-electron transistor in the superconducting state were studied. Electrostatic coupling between different islands leads to a splitting of the peak in the Coulomb oscillations of the quasiparticle tunneling current. Also observed is a clear beating of the Coulomb oscillations, which is attributed to the cross capacitance between a gate electrode and neighboring island. Numerical calculations based on the orthodox theory with inclusion of cross capacitance reproduce well most of the features seen in our data.

Original languageEnglish
Pages (from-to)1629-1632
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume59
Issue number3
DOIs
Publication statusPublished - 1999 Jan 1

Fingerprint

Single electron transistors
junction transistors
single electron transistors
Capacitance
capacitance
oscillations
Transport properties
Electrostatics
transport properties
inclusions
electrostatics
Electrodes
electrodes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

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Effect of cross capacitance in three-junction single-electron transistors. / Kim, Jinhee; Oh, Sangchul; Yoo, Kyung-hwa.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 59, No. 3, 01.01.1999, p. 1629-1632.

Research output: Contribution to journalArticle

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AU - Yoo, Kyung-hwa

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N2 - The transport properties of an (Formula presented) three-junction single-electron transistor in the superconducting state were studied. Electrostatic coupling between different islands leads to a splitting of the peak in the Coulomb oscillations of the quasiparticle tunneling current. Also observed is a clear beating of the Coulomb oscillations, which is attributed to the cross capacitance between a gate electrode and neighboring island. Numerical calculations based on the orthodox theory with inclusion of cross capacitance reproduce well most of the features seen in our data.

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