The effect of the various crystal orientations of the InGaAs surface and their constituent elements on the InGaAs surface reactions was investigated from the viewpoints of reaction kinetics and structural characteristics of InGaAs crystal. The etching of the InGaAs in the  and  directions was observed to be near-isotropic in the acidic solution. However, it was observed that the etching amount along the [-110] direction was less than that along the  direction. The etching of the InGaAs in the  and [-111] directions was observed to be anisotropic in the acidic solution. It was found that the surface reaction of InGaAs is influenced by both crystal orientation and types of solutions. In addition, it is thought that the surface reactivity and the III-V atomic arrangement of each crystal plane determine the etching characteristics of InGaAs surface.
|Title of host publication||16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019|
|Editors||Koichiro Saga, Paul W. Mertens, Takeshi Hattori, Jerzy Ruzyllo, Anthony J. Muscat|
|Publisher||Electrochemical Society Inc.|
|Number of pages||7|
|Publication status||Published - 2019|
|Event||16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019 - 236th ECS Meeting - Atlanta, United States|
Duration: 2019 Oct 13 → 2019 Oct 17
|Conference||16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019 - 236th ECS Meeting|
|Period||19/10/13 → 19/10/17|
Bibliographical noteFunding Information:
This work was supported by the Technology Innovation (20006404, Development of IIIV Semiconductor Channel CMP and Post CMP Cleaning Process) funded By the Ministry of Trade, Industry & Energy (MOTIE, Korea). This work was also supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2016R1D1A1B03936347).
© The Electrochemical Society.
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