Effect of crystal orientations of InGaAs on the surface reactions in acidic solutions

Jihoon Na; Sangwoo Lim

doi:10.1149/09202.0065ecst

Effect of crystal orientations of InGaAs on the surface reactions in acidic solutions

Jihoon Na, Sangwoo Lim

Department of Chemical and Biomolecular Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The effect of the various crystal orientations of the InGaAs surface and their constituent elements on the InGaAs surface reactions was investigated from the viewpoints of reaction kinetics and structural characteristics of InGaAs crystal. The etching of the InGaAs in the [100] and [110] directions was observed to be near-isotropic in the acidic solution. However, it was observed that the etching amount along the [-110] direction was less than that along the [110] direction. The etching of the InGaAs in the [001] and [-111] directions was observed to be anisotropic in the acidic solution. It was found that the surface reaction of InGaAs is influenced by both crystal orientation and types of solutions. In addition, it is thought that the surface reactivity and the III-V atomic arrangement of each crystal plane determine the etching characteristics of InGaAs surface.

Original language	English
Title of host publication	16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019
Editors	Koichiro Saga, Paul W. Mertens, Takeshi Hattori, Jerzy Ruzyllo, Anthony J. Muscat
Publisher	Electrochemical Society Inc.
Pages	65-71
Number of pages	7
Edition	2
ISBN (Electronic)	9781607688761
ISBN (Print)	9781607688761
DOIs	https://doi.org/10.1149/09202.0065ecst
Publication status	Published - 2019
Event	16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019 - 236th ECS Meeting - Atlanta, United States Duration: 2019 Oct 13 → 2019 Oct 17

Publication series

Name	ECS Transactions
Number	2
Volume	92
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019 - 236th ECS Meeting
Country/Territory	United States
City	Atlanta
Period	19/10/13 → 19/10/17

Bibliographical note

Funding Information:
This work was supported by the Technology Innovation (20006404, Development of IIIV Semiconductor Channel CMP and Post CMP Cleaning Process) funded By the Ministry of Trade, Industry & Energy (MOTIE, Korea). This work was also supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2016R1D1A1B03936347).

Publisher Copyright:
© The Electrochemical Society.

All Science Journal Classification (ASJC) codes

Engineering(all)

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10.1149/09202.0065ecst

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Na, J., & Lim, S. (2019). Effect of crystal orientations of InGaAs on the surface reactions in acidic solutions. In K. Saga, P. W. Mertens, T. Hattori, J. Ruzyllo, & A. J. Muscat (Eds.), 16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019 (2 ed., pp. 65-71). (ECS Transactions; Vol. 92, No. 2). Electrochemical Society Inc.. https://doi.org/10.1149/09202.0065ecst

Na, Jihoon ; Lim, Sangwoo. / Effect of crystal orientations of InGaAs on the surface reactions in acidic solutions. 16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019. editor / Koichiro Saga ; Paul W. Mertens ; Takeshi Hattori ; Jerzy Ruzyllo ; Anthony J. Muscat. 2. ed. Electrochemical Society Inc., 2019. pp. 65-71 (ECS Transactions; 2).

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abstract = "The effect of the various crystal orientations of the InGaAs surface and their constituent elements on the InGaAs surface reactions was investigated from the viewpoints of reaction kinetics and structural characteristics of InGaAs crystal. The etching of the InGaAs in the [100] and [110] directions was observed to be near-isotropic in the acidic solution. However, it was observed that the etching amount along the [-110] direction was less than that along the [110] direction. The etching of the InGaAs in the [001] and [-111] directions was observed to be anisotropic in the acidic solution. It was found that the surface reaction of InGaAs is influenced by both crystal orientation and types of solutions. In addition, it is thought that the surface reactivity and the III-V atomic arrangement of each crystal plane determine the etching characteristics of InGaAs surface.",

author = "Jihoon Na and Sangwoo Lim",

note = "Funding Information: This work was supported by the Technology Innovation (20006404, Development of IIIV Semiconductor Channel CMP and Post CMP Cleaning Process) funded By the Ministry of Trade, Industry & Energy (MOTIE, Korea). This work was also supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2016R1D1A1B03936347). Publisher Copyright: {\textcopyright} The Electrochemical Society.; 16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019 - 236th ECS Meeting ; Conference date: 13-10-2019 Through 17-10-2019",

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Na, J & Lim, S 2019, Effect of crystal orientations of InGaAs on the surface reactions in acidic solutions. in K Saga, PW Mertens, T Hattori, J Ruzyllo & AJ Muscat (eds), 16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019. 2 edn, ECS Transactions, no. 2, vol. 92, Electrochemical Society Inc., pp. 65-71, 16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019 - 236th ECS Meeting, Atlanta, United States, 19/10/13. https://doi.org/10.1149/09202.0065ecst

Effect of crystal orientations of InGaAs on the surface reactions in acidic solutions. / Na, Jihoon; Lim, Sangwoo.

16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019. ed. / Koichiro Saga; Paul W. Mertens; Takeshi Hattori; Jerzy Ruzyllo; Anthony J. Muscat. 2. ed. Electrochemical Society Inc., 2019. p. 65-71 (ECS Transactions; Vol. 92, No. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Effect of crystal orientations of InGaAs on the surface reactions in acidic solutions

AU - Na, Jihoon

AU - Lim, Sangwoo

N1 - Funding Information: This work was supported by the Technology Innovation (20006404, Development of IIIV Semiconductor Channel CMP and Post CMP Cleaning Process) funded By the Ministry of Trade, Industry & Energy (MOTIE, Korea). This work was also supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2016R1D1A1B03936347). Publisher Copyright: © The Electrochemical Society.

PY - 2019

Y1 - 2019

N2 - The effect of the various crystal orientations of the InGaAs surface and their constituent elements on the InGaAs surface reactions was investigated from the viewpoints of reaction kinetics and structural characteristics of InGaAs crystal. The etching of the InGaAs in the [100] and [110] directions was observed to be near-isotropic in the acidic solution. However, it was observed that the etching amount along the [-110] direction was less than that along the [110] direction. The etching of the InGaAs in the [001] and [-111] directions was observed to be anisotropic in the acidic solution. It was found that the surface reaction of InGaAs is influenced by both crystal orientation and types of solutions. In addition, it is thought that the surface reactivity and the III-V atomic arrangement of each crystal plane determine the etching characteristics of InGaAs surface.

AB - The effect of the various crystal orientations of the InGaAs surface and their constituent elements on the InGaAs surface reactions was investigated from the viewpoints of reaction kinetics and structural characteristics of InGaAs crystal. The etching of the InGaAs in the [100] and [110] directions was observed to be near-isotropic in the acidic solution. However, it was observed that the etching amount along the [-110] direction was less than that along the [110] direction. The etching of the InGaAs in the [001] and [-111] directions was observed to be anisotropic in the acidic solution. It was found that the surface reaction of InGaAs is influenced by both crystal orientation and types of solutions. In addition, it is thought that the surface reactivity and the III-V atomic arrangement of each crystal plane determine the etching characteristics of InGaAs surface.

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BT - 16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019

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A2 - Mertens, Paul W.

A2 - Hattori, Takeshi

A2 - Ruzyllo, Jerzy

A2 - Muscat, Anthony J.

PB - Electrochemical Society Inc.

T2 - 16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019 - 236th ECS Meeting

Y2 - 13 October 2019 through 17 October 2019

ER -

Effect of crystal orientations of InGaAs on the surface reactions in acidic solutions

Abstract

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Bibliographical note

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