Effect of crystallinity on the resistive switching behavior of HfAlOx films

In Su Mok, Jonggi Kim, Kyumin Lee, Youngjae Kim, Hyunchul Sohn, Hyoungsub Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this work, we investigated the effect of the Al2O3 cyclic ratio and the annealing temperature on the crystallinity and the resistive switching behavior of HfO2 and HfAlOx cells. The microstructures of the HfO2 and the HfAlOx films were measured by using X-ray diffraction and transmission electron microscopy in order to observe the dependencies of the electro-forming and resistive switching behaviors on the crystallinity. The formation of grain boundaries in connection with a microstructural change from an amorphous to a poly-crystalline phase is expected to be responsible for the leakage current and for the formation of conductive path formation.

Original languageEnglish
Pages (from-to)419-423
Number of pages5
JournalJournal of the Korean Physical Society
Volume64
Issue number3
DOIs
Publication statusPublished - 2014 Feb 1

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crystallinity
leakage
grain boundaries
transmission electron microscopy
microstructure
annealing
cells
diffraction
x rays
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Mok, In Su ; Kim, Jonggi ; Lee, Kyumin ; Kim, Youngjae ; Sohn, Hyunchul ; Kim, Hyoungsub. / Effect of crystallinity on the resistive switching behavior of HfAlOx films. In: Journal of the Korean Physical Society. 2014 ; Vol. 64, No. 3. pp. 419-423.
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Effect of crystallinity on the resistive switching behavior of HfAlOx films. / Mok, In Su; Kim, Jonggi; Lee, Kyumin; Kim, Youngjae; Sohn, Hyunchul; Kim, Hyoungsub.

In: Journal of the Korean Physical Society, Vol. 64, No. 3, 01.02.2014, p. 419-423.

Research output: Contribution to journalArticle

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