Effect of curing conditions of a poly(4-vinylphenol) gate dielectric on the performance of a pentacene-based thin film transistor

Minkyu Hwang, Hwa Sung Lee, Yunseok Jang, Jeong Ho Cho, Shichoon Lee, Do Hwan Kim, Kilwon Cho

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We improved the performance of pentacene-based thin film transistors by changing the curing environment of poly(4-vinylphenol) (PVP) gate dielectrics, while keeping the dielectric constant the same. The field-effect mobility of the pentacene TFTs constructed using the vacuum cured PVP was higher than that of the device based on the Ar flow cured gate dielectric, possibly due to the higher crystalline perfection of the pentacene films. The present results demonstrated that the curing conditions used can markedly affect the surface energy of polymer gate dielectrics, thereby affecting the field-effect mobility of TFTs based on those dielectrics.

Original languageEnglish
Pages (from-to)436-440
Number of pages5
JournalMacromolecular Research
Volume17
Issue number6
DOIs
Publication statusPublished - 2009 Jan 1

Fingerprint

Gate dielectrics
Thin film transistors
Curing
Interfacial energy
Polymers
Permittivity
Vacuum
Crystalline materials
pentacene
poly(4-vinylphenol)

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Organic Chemistry
  • Polymers and Plastics
  • Materials Chemistry

Cite this

Hwang, Minkyu ; Lee, Hwa Sung ; Jang, Yunseok ; Cho, Jeong Ho ; Lee, Shichoon ; Kim, Do Hwan ; Cho, Kilwon. / Effect of curing conditions of a poly(4-vinylphenol) gate dielectric on the performance of a pentacene-based thin film transistor. In: Macromolecular Research. 2009 ; Vol. 17, No. 6. pp. 436-440.
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Effect of curing conditions of a poly(4-vinylphenol) gate dielectric on the performance of a pentacene-based thin film transistor. / Hwang, Minkyu; Lee, Hwa Sung; Jang, Yunseok; Cho, Jeong Ho; Lee, Shichoon; Kim, Do Hwan; Cho, Kilwon.

In: Macromolecular Research, Vol. 17, No. 6, 01.01.2009, p. 436-440.

Research output: Contribution to journalArticle

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