The effect of interfacial reactions at the poly Si1-xGe x/HfO2 interface on the electrical properties of MOS capacitors was investigated. X-ray photoelectron spectroscopy was used for the analysis. Results showed that with an increase in hydrogen induced from doping, the accumulation capacitance of the MOS capacitors became anamolous.
|Number of pages||6|
|Journal||Journal of Applied Physics|
|Publication status||Published - 2003 Oct 1|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)