The effect of interfacial reactions at the poly Si1-xGe x/HfO2 interface on the electrical properties of MOS capacitors was investigated. X-ray photoelectron spectroscopy was used for the analysis. Results showed that with an increase in hydrogen induced from doping, the accumulation capacitance of the MOS capacitors became anamolous.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)