Effect of deposition conditions of poly Si1-xGex films and Ge atoms on the electrical properties of poly Si1-xGe x(x=0,0.6)/HfO2 gate stack

Sung Kwan Kang; Suheun Nam; Byoung Gi Min; Seok Woo Nam; Dae Hong Ko; Mann Ho Cho

doi:10.1063/1.1605257

Effect of deposition conditions of poly Si_1-xGe_x films and Ge atoms on the electrical properties of poly Si_1-xGe _x(x=0,0.6)/HfO₂ gate stack

Sung Kwan Kang, Suheun Nam, Byoung Gi Min, Seok Woo Nam, Dae Hong Ko, Mann Ho Cho

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The effect of interfacial reactions at the poly Si_1-xGe _x/HfO₂ interface on the electrical properties of MOS capacitors was investigated. X-ray photoelectron spectroscopy was used for the analysis. Results showed that with an increase in hydrogen induced from doping, the accumulation capacitance of the MOS capacitors became anamolous.

Original language	English
Pages (from-to)	4608-4613
Number of pages	6
Journal	Journal of Applied Physics
Volume	94
Issue number	7
DOIs	https://doi.org/10.1063/1.1605257
Publication status	Published - 2003 Oct 1

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1063/1.1605257

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title = "Effect of deposition conditions of poly Si1-xGex films and Ge atoms on the electrical properties of poly Si1-xGe x(x=0,0.6)/HfO2 gate stack",

abstract = "The effect of interfacial reactions at the poly Si1-xGe x/HfO2 interface on the electrical properties of MOS capacitors was investigated. X-ray photoelectron spectroscopy was used for the analysis. Results showed that with an increase in hydrogen induced from doping, the accumulation capacitance of the MOS capacitors became anamolous.",

author = "Kang, {Sung Kwan} and Suheun Nam and Min, {Byoung Gi} and Nam, {Seok Woo} and Ko, {Dae Hong} and Cho, {Mann Ho}",

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AU - Kang, Sung Kwan

AU - Nam, Suheun

AU - Min, Byoung Gi

AU - Nam, Seok Woo

AU - Ko, Dae Hong

AU - Cho, Mann Ho

PY - 2003/10/1

Y1 - 2003/10/1

N2 - The effect of interfacial reactions at the poly Si1-xGe x/HfO2 interface on the electrical properties of MOS capacitors was investigated. X-ray photoelectron spectroscopy was used for the analysis. Results showed that with an increase in hydrogen induced from doping, the accumulation capacitance of the MOS capacitors became anamolous.

AB - The effect of interfacial reactions at the poly Si1-xGe x/HfO2 interface on the electrical properties of MOS capacitors was investigated. X-ray photoelectron spectroscopy was used for the analysis. Results showed that with an increase in hydrogen induced from doping, the accumulation capacitance of the MOS capacitors became anamolous.

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Effect of deposition conditions of poly Si_1-xGe_x films and Ge atoms on the electrical properties of poly Si_1-xGe _x(x=0,0.6)/HfO₂ gate stack

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