Effect of deposition conditions of poly Si1-xGex films and Ge atoms on the electrical properties of poly Si1-xGe x(x=0,0.6)/HfO2 gate stack

Sung Kwan Kang, Suheun Nam, Byoung Gi Min, Seok Woo Nam, Dae Hong Ko, Mann Ho Cho

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The effect of interfacial reactions at the poly Si1-xGe x/HfO2 interface on the electrical properties of MOS capacitors was investigated. X-ray photoelectron spectroscopy was used for the analysis. Results showed that with an increase in hydrogen induced from doping, the accumulation capacitance of the MOS capacitors became anamolous.

Original languageEnglish
Pages (from-to)4608-4613
Number of pages6
JournalJournal of Applied Physics
Volume94
Issue number7
DOIs
Publication statusPublished - 2003 Oct 1

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capacitors
electrical properties
atoms
capacitance
photoelectron spectroscopy
hydrogen
x rays

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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abstract = "The effect of interfacial reactions at the poly Si1-xGe x/HfO2 interface on the electrical properties of MOS capacitors was investigated. X-ray photoelectron spectroscopy was used for the analysis. Results showed that with an increase in hydrogen induced from doping, the accumulation capacitance of the MOS capacitors became anamolous.",
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Effect of deposition conditions of poly Si1-xGex films and Ge atoms on the electrical properties of poly Si1-xGe x(x=0,0.6)/HfO2 gate stack. / Kang, Sung Kwan; Nam, Suheun; Min, Byoung Gi; Nam, Seok Woo; Ko, Dae Hong; Cho, Mann Ho.

In: Journal of Applied Physics, Vol. 94, No. 7, 01.10.2003, p. 4608-4613.

Research output: Contribution to journalArticle

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AU - Nam, Suheun

AU - Min, Byoung Gi

AU - Nam, Seok Woo

AU - Ko, Dae Hong

AU - Cho, Mann Ho

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