Effect of deposition power on structural and electrical properties of Al-doped ZnO films using pulsed direct-current magnetron sputtering with single cylindrical target

Beom Ki Shin; Tae Il Lee; Jyoti Prakash Kar; Min Jung Lee; Kang Il Park; Kyung Jun Ahn; Keun Young Yeom; Joong Hwee Cho; Jae Min Myoung

doi:10.1016/j.mssp.2010.12.013

Effect of deposition power on structural and electrical properties of Al-doped ZnO films using pulsed direct-current magnetron sputtering with single cylindrical target

Beom Ki Shin, Tae Il Lee, Jyoti Prakash Kar, Min Jung Lee, Kang Il Park, Kyung Jun Ahn, Keun Young Yeom, Joong Hwee Cho, Jae Min Myoung

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

The change of stoichiometric ratio caused by the increase in sputtering power in Al-doped ZnO (AZO) films was investigated, where the films were grown by pulsed dc magnetron sputtering with a cylindrical target. The properties of the films were strongly affected by the sputtering power. Lower sputtering power was found suitable for the growth of c-axis oriented AZO films. At 2 kW, assisted proper energetic particles, the high quality films having a proper stoichiometric ratio of ZnO were obtained. Whereas, at 4 kW, highly accelerated oxygen ions and recoiling Ar atoms strongly collide with target and these energetic collisions then degrade the quality of films. The average carrier concentrations of all the samples were about 1.5×10²¹ cm ^-3. For a sputtering power of 2 kW, the lowest value of resistivity was estimated to be 7.69×10^-4 cm along with the highest Hall mobility of 6.2 cm² V^-1 s^-1. The deposition rate of AZO films at this power was 130.8 nm/min. The lower sputtering power (2 kW) was found suitable for the fabrication of low-cost transparent conductive oxide layer for futuristic electronic devices with a transmittance of 85%.

Original language	English
Pages (from-to)	23-27
Number of pages	5
Journal	Materials Science in Semiconductor Processing
Volume	14
Issue number	1
DOIs	https://doi.org/10.1016/j.mssp.2010.12.013
Publication status	Published - 2011 Mar

Bibliographical note

Funding Information:
This research was supported by the Converging Research Center Program through the Ministry of Education, Science and Technology (Grant no. 2010K001082 ).

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mssp.2010.12.013

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Shin, B. K., Lee, T. I., Prakash Kar, J., Lee, M. J., Park, K. I., Ahn, K. J., Yeom, K. Y., Cho, J. H., & Myoung, J. M. (2011). Effect of deposition power on structural and electrical properties of Al-doped ZnO films using pulsed direct-current magnetron sputtering with single cylindrical target. Materials Science in Semiconductor Processing, 14(1), 23-27. https://doi.org/10.1016/j.mssp.2010.12.013

@article{d426db91831f465cad3c4a5a30a97bdf,

title = "Effect of deposition power on structural and electrical properties of Al-doped ZnO films using pulsed direct-current magnetron sputtering with single cylindrical target",

abstract = "The change of stoichiometric ratio caused by the increase in sputtering power in Al-doped ZnO (AZO) films was investigated, where the films were grown by pulsed dc magnetron sputtering with a cylindrical target. The properties of the films were strongly affected by the sputtering power. Lower sputtering power was found suitable for the growth of c-axis oriented AZO films. At 2 kW, assisted proper energetic particles, the high quality films having a proper stoichiometric ratio of ZnO were obtained. Whereas, at 4 kW, highly accelerated oxygen ions and recoiling Ar atoms strongly collide with target and these energetic collisions then degrade the quality of films. The average carrier concentrations of all the samples were about 1.5×1021 cm -3. For a sputtering power of 2 kW, the lowest value of resistivity was estimated to be 7.69×10-4 cm along with the highest Hall mobility of 6.2 cm2 V-1 s-1. The deposition rate of AZO films at this power was 130.8 nm/min. The lower sputtering power (2 kW) was found suitable for the fabrication of low-cost transparent conductive oxide layer for futuristic electronic devices with a transmittance of 85%.",

author = "Shin, {Beom Ki} and Lee, {Tae Il} and {Prakash Kar}, Jyoti and Lee, {Min Jung} and Park, {Kang Il} and Ahn, {Kyung Jun} and Yeom, {Keun Young} and Cho, {Joong Hwee} and Myoung, {Jae Min}",

note = "Funding Information: This research was supported by the Converging Research Center Program through the Ministry of Education, Science and Technology (Grant no. 2010K001082 ).",

year = "2011",

month = mar,

doi = "10.1016/j.mssp.2010.12.013",

language = "English",

volume = "14",

pages = "23--27",

journal = "Materials Science in Semiconductor Processing",

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Shin, BK, Lee, TI, Prakash Kar, J, Lee, MJ, Park, KI, Ahn, KJ, Yeom, KY, Cho, JH & Myoung, JM 2011, 'Effect of deposition power on structural and electrical properties of Al-doped ZnO films using pulsed direct-current magnetron sputtering with single cylindrical target', Materials Science in Semiconductor Processing, vol. 14, no. 1, pp. 23-27. https://doi.org/10.1016/j.mssp.2010.12.013

Effect of deposition power on structural and electrical properties of Al-doped ZnO films using pulsed direct-current magnetron sputtering with single cylindrical target. / Shin, Beom Ki; Lee, Tae Il; Prakash Kar, Jyoti et al.

In: Materials Science in Semiconductor Processing, Vol. 14, No. 1, 03.2011, p. 23-27.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Effect of deposition power on structural and electrical properties of Al-doped ZnO films using pulsed direct-current magnetron sputtering with single cylindrical target

AU - Shin, Beom Ki

AU - Lee, Tae Il

AU - Prakash Kar, Jyoti

AU - Lee, Min Jung

AU - Park, Kang Il

AU - Ahn, Kyung Jun

AU - Yeom, Keun Young

AU - Cho, Joong Hwee

AU - Myoung, Jae Min

N1 - Funding Information: This research was supported by the Converging Research Center Program through the Ministry of Education, Science and Technology (Grant no. 2010K001082 ).

PY - 2011/3

Y1 - 2011/3

N2 - The change of stoichiometric ratio caused by the increase in sputtering power in Al-doped ZnO (AZO) films was investigated, where the films were grown by pulsed dc magnetron sputtering with a cylindrical target. The properties of the films were strongly affected by the sputtering power. Lower sputtering power was found suitable for the growth of c-axis oriented AZO films. At 2 kW, assisted proper energetic particles, the high quality films having a proper stoichiometric ratio of ZnO were obtained. Whereas, at 4 kW, highly accelerated oxygen ions and recoiling Ar atoms strongly collide with target and these energetic collisions then degrade the quality of films. The average carrier concentrations of all the samples were about 1.5×1021 cm -3. For a sputtering power of 2 kW, the lowest value of resistivity was estimated to be 7.69×10-4 cm along with the highest Hall mobility of 6.2 cm2 V-1 s-1. The deposition rate of AZO films at this power was 130.8 nm/min. The lower sputtering power (2 kW) was found suitable for the fabrication of low-cost transparent conductive oxide layer for futuristic electronic devices with a transmittance of 85%.

AB - The change of stoichiometric ratio caused by the increase in sputtering power in Al-doped ZnO (AZO) films was investigated, where the films were grown by pulsed dc magnetron sputtering with a cylindrical target. The properties of the films were strongly affected by the sputtering power. Lower sputtering power was found suitable for the growth of c-axis oriented AZO films. At 2 kW, assisted proper energetic particles, the high quality films having a proper stoichiometric ratio of ZnO were obtained. Whereas, at 4 kW, highly accelerated oxygen ions and recoiling Ar atoms strongly collide with target and these energetic collisions then degrade the quality of films. The average carrier concentrations of all the samples were about 1.5×1021 cm -3. For a sputtering power of 2 kW, the lowest value of resistivity was estimated to be 7.69×10-4 cm along with the highest Hall mobility of 6.2 cm2 V-1 s-1. The deposition rate of AZO films at this power was 130.8 nm/min. The lower sputtering power (2 kW) was found suitable for the fabrication of low-cost transparent conductive oxide layer for futuristic electronic devices with a transmittance of 85%.

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M3 - Article

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JO - Materials Science in Semiconductor Processing

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SN - 1369-8001

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Effect of deposition power on structural and electrical properties of Al-doped ZnO films using pulsed direct-current magnetron sputtering with single cylindrical target

Abstract

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All Science Journal Classification (ASJC) codes

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