Effect of deposition power on structural and electrical properties of Al-doped ZnO films using pulsed direct-current magnetron sputtering with single cylindrical target

Beom Ki Shin, Tae Il Lee, Jyoti Prakash Kar, Min Jung Lee, Kang Il Park, Kyung Jun Ahn, Keun Young Yeom, Joong Hwee Cho, Jae Min Myoung

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The change of stoichiometric ratio caused by the increase in sputtering power in Al-doped ZnO (AZO) films was investigated, where the films were grown by pulsed dc magnetron sputtering with a cylindrical target. The properties of the films were strongly affected by the sputtering power. Lower sputtering power was found suitable for the growth of c-axis oriented AZO films. At 2 kW, assisted proper energetic particles, the high quality films having a proper stoichiometric ratio of ZnO were obtained. Whereas, at 4 kW, highly accelerated oxygen ions and recoiling Ar atoms strongly collide with target and these energetic collisions then degrade the quality of films. The average carrier concentrations of all the samples were about 1.5×1021 cm -3. For a sputtering power of 2 kW, the lowest value of resistivity was estimated to be 7.69×10-4 cm along with the highest Hall mobility of 6.2 cm2 V-1 s-1. The deposition rate of AZO films at this power was 130.8 nm/min. The lower sputtering power (2 kW) was found suitable for the fabrication of low-cost transparent conductive oxide layer for futuristic electronic devices with a transmittance of 85%.

Original languageEnglish
Pages (from-to)23-27
Number of pages5
JournalMaterials Science in Semiconductor Processing
Volume14
Issue number1
DOIs
Publication statusPublished - 2011 Mar 1

Fingerprint

Magnetron sputtering
Structural properties
magnetron sputtering
Electric properties
direct current
electrical properties
Sputtering
sputtering
Hall mobility
recoilings
energetic particles
oxygen ions
Deposition rates
Oxides
Carrier concentration
transmittance
Ions
Oxygen
Fabrication
Atoms

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Shin, Beom Ki ; Lee, Tae Il ; Prakash Kar, Jyoti ; Lee, Min Jung ; Park, Kang Il ; Ahn, Kyung Jun ; Yeom, Keun Young ; Cho, Joong Hwee ; Myoung, Jae Min. / Effect of deposition power on structural and electrical properties of Al-doped ZnO films using pulsed direct-current magnetron sputtering with single cylindrical target. In: Materials Science in Semiconductor Processing. 2011 ; Vol. 14, No. 1. pp. 23-27.
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Effect of deposition power on structural and electrical properties of Al-doped ZnO films using pulsed direct-current magnetron sputtering with single cylindrical target. / Shin, Beom Ki; Lee, Tae Il; Prakash Kar, Jyoti; Lee, Min Jung; Park, Kang Il; Ahn, Kyung Jun; Yeom, Keun Young; Cho, Joong Hwee; Myoung, Jae Min.

In: Materials Science in Semiconductor Processing, Vol. 14, No. 1, 01.03.2011, p. 23-27.

Research output: Contribution to journalArticle

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AU - Shin, Beom Ki

AU - Lee, Tae Il

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AU - Park, Kang Il

AU - Ahn, Kyung Jun

AU - Yeom, Keun Young

AU - Cho, Joong Hwee

AU - Myoung, Jae Min

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