Abstract
The change of stoichiometric ratio caused by the increase in sputtering power in Al-doped ZnO (AZO) films was investigated, where the films were grown by pulsed dc magnetron sputtering with a cylindrical target. The properties of the films were strongly affected by the sputtering power. Lower sputtering power was found suitable for the growth of c-axis oriented AZO films. At 2 kW, assisted proper energetic particles, the high quality films having a proper stoichiometric ratio of ZnO were obtained. Whereas, at 4 kW, highly accelerated oxygen ions and recoiling Ar atoms strongly collide with target and these energetic collisions then degrade the quality of films. The average carrier concentrations of all the samples were about 1.5×1021 cm -3. For a sputtering power of 2 kW, the lowest value of resistivity was estimated to be 7.69×10-4 cm along with the highest Hall mobility of 6.2 cm2 V-1 s-1. The deposition rate of AZO films at this power was 130.8 nm/min. The lower sputtering power (2 kW) was found suitable for the fabrication of low-cost transparent conductive oxide layer for futuristic electronic devices with a transmittance of 85%.
| Original language | English |
|---|---|
| Pages (from-to) | 23-27 |
| Number of pages | 5 |
| Journal | Materials Science in Semiconductor Processing |
| Volume | 14 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2011 Mar 1 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
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Effect of deposition power on structural and electrical properties of Al-doped ZnO films using pulsed direct-current magnetron sputtering with single cylindrical target. / Shin, Beom Ki; Lee, Tae Il; Prakash Kar, Jyoti; Lee, Min Jung; Park, Kang Il; Ahn, Kyung Jun; Yeom, Keun Young; Cho, Joong Hwee; Myoung, Jae Min.
In: Materials Science in Semiconductor Processing, Vol. 14, No. 1, 01.03.2011, p. 23-27.Research output: Contribution to journal › Article
TY - JOUR
T1 - Effect of deposition power on structural and electrical properties of Al-doped ZnO films using pulsed direct-current magnetron sputtering with single cylindrical target
AU - Shin, Beom Ki
AU - Lee, Tae Il
AU - Prakash Kar, Jyoti
AU - Lee, Min Jung
AU - Park, Kang Il
AU - Ahn, Kyung Jun
AU - Yeom, Keun Young
AU - Cho, Joong Hwee
AU - Myoung, Jae Min
PY - 2011/3/1
Y1 - 2011/3/1
N2 - The change of stoichiometric ratio caused by the increase in sputtering power in Al-doped ZnO (AZO) films was investigated, where the films were grown by pulsed dc magnetron sputtering with a cylindrical target. The properties of the films were strongly affected by the sputtering power. Lower sputtering power was found suitable for the growth of c-axis oriented AZO films. At 2 kW, assisted proper energetic particles, the high quality films having a proper stoichiometric ratio of ZnO were obtained. Whereas, at 4 kW, highly accelerated oxygen ions and recoiling Ar atoms strongly collide with target and these energetic collisions then degrade the quality of films. The average carrier concentrations of all the samples were about 1.5×1021 cm -3. For a sputtering power of 2 kW, the lowest value of resistivity was estimated to be 7.69×10-4 cm along with the highest Hall mobility of 6.2 cm2 V-1 s-1. The deposition rate of AZO films at this power was 130.8 nm/min. The lower sputtering power (2 kW) was found suitable for the fabrication of low-cost transparent conductive oxide layer for futuristic electronic devices with a transmittance of 85%.
AB - The change of stoichiometric ratio caused by the increase in sputtering power in Al-doped ZnO (AZO) films was investigated, where the films were grown by pulsed dc magnetron sputtering with a cylindrical target. The properties of the films were strongly affected by the sputtering power. Lower sputtering power was found suitable for the growth of c-axis oriented AZO films. At 2 kW, assisted proper energetic particles, the high quality films having a proper stoichiometric ratio of ZnO were obtained. Whereas, at 4 kW, highly accelerated oxygen ions and recoiling Ar atoms strongly collide with target and these energetic collisions then degrade the quality of films. The average carrier concentrations of all the samples were about 1.5×1021 cm -3. For a sputtering power of 2 kW, the lowest value of resistivity was estimated to be 7.69×10-4 cm along with the highest Hall mobility of 6.2 cm2 V-1 s-1. The deposition rate of AZO films at this power was 130.8 nm/min. The lower sputtering power (2 kW) was found suitable for the fabrication of low-cost transparent conductive oxide layer for futuristic electronic devices with a transmittance of 85%.
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U2 - 10.1016/j.mssp.2010.12.013
DO - 10.1016/j.mssp.2010.12.013
M3 - Article
AN - SCOPUS:79952617889
VL - 14
SP - 23
EP - 27
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
SN - 1369-8001
IS - 1
ER -