In this work, we investigated the effect of growth temperature and doping of Nb, with a valence different from that of Ni, on the resistance switching behavior of NiOx films. Reactive dc magnetron sputtering was used to fabricate Pt/ NiOx /Pt metal-insulator-metal (MIM) stacks on Ti/ SiO2 /Si substrates with Nb doping at various substrate temperatures. The crystallinity, surface morphology, and chemical bonding states of NiO x were also characterized in conjunction with the resistance switching. Deposition at 400°C improved the resistance switching endurance, and Nb doping of up to 3.5% at 400°C produced a higher endurance for the SET/RESET processes with a narrower distribution of VSET as compared to the undoped NiOx films. X-ray diffraction showed that sputtering at 400°C made the (111) textures pronounced with the reduced full width at half-maximum of the (111) peak as compared to the NiOx films deposited at room temperature. X-ray photoemission spectroscopy showed that the Nb doping of NiOx films produced a higher density in the metallic Ni0 than in the undoped NiOx films deposited at the same temperature. This work shows that resistive switching behavior of NiO x can be enhanced by doping it with Nb of different oxidation valences.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry