Effect of deposition temperature and niobium doping on resistive switching properties of the polycrystalline NiOx films

Jonggi Kim, Kyumin Lee, Hyunchul Sohn

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

In this work, we investigated the effect of growth temperature and doping of Nb, with a valence different from that of Ni, on the resistance switching behavior of NiOx films. Reactive dc magnetron sputtering was used to fabricate Pt/ NiOx /Pt metal-insulator-metal (MIM) stacks on Ti/ SiO2 /Si substrates with Nb doping at various substrate temperatures. The crystallinity, surface morphology, and chemical bonding states of NiO x were also characterized in conjunction with the resistance switching. Deposition at 400°C improved the resistance switching endurance, and Nb doping of up to 3.5% at 400°C produced a higher endurance for the SET/RESET processes with a narrower distribution of VSET as compared to the undoped NiOx films. X-ray diffraction showed that sputtering at 400°C made the (111) textures pronounced with the reduced full width at half-maximum of the (111) peak as compared to the NiOx films deposited at room temperature. X-ray photoemission spectroscopy showed that the Nb doping of NiOx films produced a higher density in the metallic Ni0 than in the undoped NiOx films deposited at the same temperature. This work shows that resistive switching behavior of NiO x can be enhanced by doping it with Nb of different oxidation valences.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume156
Issue number12
DOIs
Publication statusPublished - 2009 Nov 10

Fingerprint

Niobium
niobium
Doping (additives)
endurance
Durability
Temperature
Metals
temperature
valence
Reactive sputtering
Growth temperature
Substrates
Photoelectron spectroscopy
X ray spectroscopy
Full width at half maximum
Magnetron sputtering
metals
Surface morphology
Sputtering
crystallinity

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Materials Chemistry
  • Electrochemistry

Cite this

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title = "Effect of deposition temperature and niobium doping on resistive switching properties of the polycrystalline NiOx films",
abstract = "In this work, we investigated the effect of growth temperature and doping of Nb, with a valence different from that of Ni, on the resistance switching behavior of NiOx films. Reactive dc magnetron sputtering was used to fabricate Pt/ NiOx /Pt metal-insulator-metal (MIM) stacks on Ti/ SiO2 /Si substrates with Nb doping at various substrate temperatures. The crystallinity, surface morphology, and chemical bonding states of NiO x were also characterized in conjunction with the resistance switching. Deposition at 400°C improved the resistance switching endurance, and Nb doping of up to 3.5{\%} at 400°C produced a higher endurance for the SET/RESET processes with a narrower distribution of VSET as compared to the undoped NiOx films. X-ray diffraction showed that sputtering at 400°C made the (111) textures pronounced with the reduced full width at half-maximum of the (111) peak as compared to the NiOx films deposited at room temperature. X-ray photoemission spectroscopy showed that the Nb doping of NiOx films produced a higher density in the metallic Ni0 than in the undoped NiOx films deposited at the same temperature. This work shows that resistive switching behavior of NiO x can be enhanced by doping it with Nb of different oxidation valences.",
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Effect of deposition temperature and niobium doping on resistive switching properties of the polycrystalline NiOx films. / Kim, Jonggi; Lee, Kyumin; Sohn, Hyunchul.

In: Journal of the Electrochemical Society, Vol. 156, No. 12, 10.11.2009.

Research output: Contribution to journalArticle

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AB - In this work, we investigated the effect of growth temperature and doping of Nb, with a valence different from that of Ni, on the resistance switching behavior of NiOx films. Reactive dc magnetron sputtering was used to fabricate Pt/ NiOx /Pt metal-insulator-metal (MIM) stacks on Ti/ SiO2 /Si substrates with Nb doping at various substrate temperatures. The crystallinity, surface morphology, and chemical bonding states of NiO x were also characterized in conjunction with the resistance switching. Deposition at 400°C improved the resistance switching endurance, and Nb doping of up to 3.5% at 400°C produced a higher endurance for the SET/RESET processes with a narrower distribution of VSET as compared to the undoped NiOx films. X-ray diffraction showed that sputtering at 400°C made the (111) textures pronounced with the reduced full width at half-maximum of the (111) peak as compared to the NiOx films deposited at room temperature. X-ray photoemission spectroscopy showed that the Nb doping of NiOx films produced a higher density in the metallic Ni0 than in the undoped NiOx films deposited at the same temperature. This work shows that resistive switching behavior of NiO x can be enhanced by doping it with Nb of different oxidation valences.

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