Effect of deposition temperature on dielectric properties of PECVD Ta2O5 thin film

Hwan Seong Moon, Jae Suk Lee, Sung Wook Han, Jong Wan Park, Jae Hak Lee, Seung Kee Yang, Hyung-Ho Park

Research output: Contribution to journalComment/debate

12 Citations (Scopus)

Abstract

Tantalum oxide film formation by plasma-enhanced chemical vapour deposition (PECVD) using TaCl5 as a source material was examined. The effects of deposition temperature on the formation, structure and electric properties of the Ta2O5 film were investigated for Al/Ta2O5/ p-Si (MTS) capacitors. The deposition rate and refractive index increased with increasing deposition temperature. It was found that the structure of Ta2O5 deposited by PECVD was amorphous as-deposited. However, crystalline δ-Ta2O5 of hexagonal structure was formed by a 700 °C, 1 h heat treatment in argon. Capacitance and relative dielectric constant of the PECVD Ta2O5 were found to be 2.54 fF μm-2 and 23.5, respectively. The PECVD films obtained in this study have higher dielectric constants and remarkably better general film characteristics than those obtained by other deposition methods.

Original languageEnglish
Pages (from-to)3372-3375
Number of pages4
JournalJournal of Materials Science
Volume29
Issue number12
DOIs
Publication statusPublished - 1994 Jan 1

Fingerprint

Plasma enhanced chemical vapor deposition
Dielectric properties
Thin films
Permittivity
Tantalum oxides
Temperature
Argon
Deposition rates
Oxide films
Refractive index
Electric properties
Capacitors
Capacitance
Heat treatment
Crystalline materials

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Moon, Hwan Seong ; Lee, Jae Suk ; Han, Sung Wook ; Park, Jong Wan ; Lee, Jae Hak ; Yang, Seung Kee ; Park, Hyung-Ho. / Effect of deposition temperature on dielectric properties of PECVD Ta2O5 thin film. In: Journal of Materials Science. 1994 ; Vol. 29, No. 12. pp. 3372-3375.
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abstract = "Tantalum oxide film formation by plasma-enhanced chemical vapour deposition (PECVD) using TaCl5 as a source material was examined. The effects of deposition temperature on the formation, structure and electric properties of the Ta2O5 film were investigated for Al/Ta2O5/ p-Si (MTS) capacitors. The deposition rate and refractive index increased with increasing deposition temperature. It was found that the structure of Ta2O5 deposited by PECVD was amorphous as-deposited. However, crystalline δ-Ta2O5 of hexagonal structure was formed by a 700 °C, 1 h heat treatment in argon. Capacitance and relative dielectric constant of the PECVD Ta2O5 were found to be 2.54 fF μm-2 and 23.5, respectively. The PECVD films obtained in this study have higher dielectric constants and remarkably better general film characteristics than those obtained by other deposition methods.",
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Effect of deposition temperature on dielectric properties of PECVD Ta2O5 thin film. / Moon, Hwan Seong; Lee, Jae Suk; Han, Sung Wook; Park, Jong Wan; Lee, Jae Hak; Yang, Seung Kee; Park, Hyung-Ho.

In: Journal of Materials Science, Vol. 29, No. 12, 01.01.1994, p. 3372-3375.

Research output: Contribution to journalComment/debate

TY - JOUR

T1 - Effect of deposition temperature on dielectric properties of PECVD Ta2O5 thin film

AU - Moon, Hwan Seong

AU - Lee, Jae Suk

AU - Han, Sung Wook

AU - Park, Jong Wan

AU - Lee, Jae Hak

AU - Yang, Seung Kee

AU - Park, Hyung-Ho

PY - 1994/1/1

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N2 - Tantalum oxide film formation by plasma-enhanced chemical vapour deposition (PECVD) using TaCl5 as a source material was examined. The effects of deposition temperature on the formation, structure and electric properties of the Ta2O5 film were investigated for Al/Ta2O5/ p-Si (MTS) capacitors. The deposition rate and refractive index increased with increasing deposition temperature. It was found that the structure of Ta2O5 deposited by PECVD was amorphous as-deposited. However, crystalline δ-Ta2O5 of hexagonal structure was formed by a 700 °C, 1 h heat treatment in argon. Capacitance and relative dielectric constant of the PECVD Ta2O5 were found to be 2.54 fF μm-2 and 23.5, respectively. The PECVD films obtained in this study have higher dielectric constants and remarkably better general film characteristics than those obtained by other deposition methods.

AB - Tantalum oxide film formation by plasma-enhanced chemical vapour deposition (PECVD) using TaCl5 as a source material was examined. The effects of deposition temperature on the formation, structure and electric properties of the Ta2O5 film were investigated for Al/Ta2O5/ p-Si (MTS) capacitors. The deposition rate and refractive index increased with increasing deposition temperature. It was found that the structure of Ta2O5 deposited by PECVD was amorphous as-deposited. However, crystalline δ-Ta2O5 of hexagonal structure was formed by a 700 °C, 1 h heat treatment in argon. Capacitance and relative dielectric constant of the PECVD Ta2O5 were found to be 2.54 fF μm-2 and 23.5, respectively. The PECVD films obtained in this study have higher dielectric constants and remarkably better general film characteristics than those obtained by other deposition methods.

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