Effect of deposition temperature on dielectric properties of PECVD Ta2O5 thin film

Hwan Seong Moon; Jae Suk Lee; Sung Wook Han; Jong Wan Park; Jae Hak Lee; Seung Kee Yang; Hyung Ho Park

doi:10.1007/BF00356687

Effect of deposition temperature on dielectric properties of PECVD Ta₂O₅ thin film

Hwan Seong Moon, Jae Suk Lee, Sung Wook Han, Jong Wan Park, Jae Hak Lee, Seung Kee Yang, Hyung Ho Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Comment/debate › peer-review

12 Citations (Scopus)

Abstract

Tantalum oxide film formation by plasma-enhanced chemical vapour deposition (PECVD) using TaCl₅ as a source material was examined. The effects of deposition temperature on the formation, structure and electric properties of the Ta₂O₅ film were investigated for Al/Ta₂O₅/ p-Si (MTS) capacitors. The deposition rate and refractive index increased with increasing deposition temperature. It was found that the structure of Ta₂O₅ deposited by PECVD was amorphous as-deposited. However, crystalline δ-Ta₂O₅ of hexagonal structure was formed by a 700 °C, 1 h heat treatment in argon. Capacitance and relative dielectric constant of the PECVD Ta₂O₅ were found to be 2.54 fF μm^-2 and 23.5, respectively. The PECVD films obtained in this study have higher dielectric constants and remarkably better general film characteristics than those obtained by other deposition methods.

Original language	English
Pages (from-to)	3372-3375
Number of pages	4
Journal	Journal of Materials Science
Volume	29
Issue number	12
DOIs	https://doi.org/10.1007/BF00356687
Publication status	Published - 1994 Jan

All Science Journal Classification (ASJC) codes

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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title = "Effect of deposition temperature on dielectric properties of PECVD Ta2O5 thin film",

abstract = "Tantalum oxide film formation by plasma-enhanced chemical vapour deposition (PECVD) using TaCl5 as a source material was examined. The effects of deposition temperature on the formation, structure and electric properties of the Ta2O5 film were investigated for Al/Ta2O5/ p-Si (MTS) capacitors. The deposition rate and refractive index increased with increasing deposition temperature. It was found that the structure of Ta2O5 deposited by PECVD was amorphous as-deposited. However, crystalline δ-Ta2O5 of hexagonal structure was formed by a 700 °C, 1 h heat treatment in argon. Capacitance and relative dielectric constant of the PECVD Ta2O5 were found to be 2.54 fF μm-2 and 23.5, respectively. The PECVD films obtained in this study have higher dielectric constants and remarkably better general film characteristics than those obtained by other deposition methods.",

author = "Moon, {Hwan Seong} and Lee, {Jae Suk} and Han, {Sung Wook} and Park, {Jong Wan} and Lee, {Jae Hak} and Yang, {Seung Kee} and Park, {Hyung Ho}",

year = "1994",

month = jan,

doi = "10.1007/BF00356687",

language = "English",

volume = "29",

pages = "3372--3375",

journal = "Journal of Materials Science",

issn = "0022-2461",

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number = "12",

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T1 - Effect of deposition temperature on dielectric properties of PECVD Ta2O5 thin film

AU - Moon, Hwan Seong

AU - Lee, Jae Suk

AU - Han, Sung Wook

AU - Park, Jong Wan

AU - Lee, Jae Hak

AU - Yang, Seung Kee

AU - Park, Hyung Ho

PY - 1994/1

Y1 - 1994/1

N2 - Tantalum oxide film formation by plasma-enhanced chemical vapour deposition (PECVD) using TaCl5 as a source material was examined. The effects of deposition temperature on the formation, structure and electric properties of the Ta2O5 film were investigated for Al/Ta2O5/ p-Si (MTS) capacitors. The deposition rate and refractive index increased with increasing deposition temperature. It was found that the structure of Ta2O5 deposited by PECVD was amorphous as-deposited. However, crystalline δ-Ta2O5 of hexagonal structure was formed by a 700 °C, 1 h heat treatment in argon. Capacitance and relative dielectric constant of the PECVD Ta2O5 were found to be 2.54 fF μm-2 and 23.5, respectively. The PECVD films obtained in this study have higher dielectric constants and remarkably better general film characteristics than those obtained by other deposition methods.

AB - Tantalum oxide film formation by plasma-enhanced chemical vapour deposition (PECVD) using TaCl5 as a source material was examined. The effects of deposition temperature on the formation, structure and electric properties of the Ta2O5 film were investigated for Al/Ta2O5/ p-Si (MTS) capacitors. The deposition rate and refractive index increased with increasing deposition temperature. It was found that the structure of Ta2O5 deposited by PECVD was amorphous as-deposited. However, crystalline δ-Ta2O5 of hexagonal structure was formed by a 700 °C, 1 h heat treatment in argon. Capacitance and relative dielectric constant of the PECVD Ta2O5 were found to be 2.54 fF μm-2 and 23.5, respectively. The PECVD films obtained in this study have higher dielectric constants and remarkably better general film characteristics than those obtained by other deposition methods.

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DO - 10.1007/BF00356687

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JO - Journal of Materials Science

JF - Journal of Materials Science

IS - 12

ER -

Effect of deposition temperature on dielectric properties of PECVD Ta₂O₅ thin film

Abstract

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