Effect of different etching processes on edge breakdown suppression for planar InP/InGaAs avalanche photodiodes

Bongyong Lee, Ilgu Yun

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

With the progress of semiconductor processing technology, avalanche photodiodes (APDs) based on InP/InGaAs are used for high-speed optical receiver modules. Planar-type APDs give higher reliability than mesa-type APDs. However, planar-type APDs struggle with a problem of intense electric field at the junction curvature, which causes edge breakdown phenomena at the junction periphery. In this paper, we focus our study on the effects of junction curvature for APDs performances by different etching processes followed by single diffusion to form p-n junction. The performance of each process is characterized by observing electric field profiles and carrier generation rates. From the results, it is understood that the optimum structure, which can minimize edge breakdown and improve the manufacturability, can be predicted.

Original languageEnglish
Pages (from-to)645-649
Number of pages5
JournalMicroelectronics Journal
Volume33
Issue number8
DOIs
Publication statusPublished - 2002 Aug 1

Fingerprint

Avalanche photodiodes
avalanches
photodiodes
Etching
breakdown
retarding
etching
curvature
Electric fields
Optical receivers
electric fields
mesas
p-n junctions
receivers
modules
high speed
Semiconductor materials
causes
Processing
profiles

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

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Effect of different etching processes on edge breakdown suppression for planar InP/InGaAs avalanche photodiodes. / Lee, Bongyong; Yun, Ilgu.

In: Microelectronics Journal, Vol. 33, No. 8, 01.08.2002, p. 645-649.

Research output: Contribution to journalArticle

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