Effect of Diluent Gases on Growth Behavior and Characteristics of Chemically Vapor Deposited Silicon Carbide Films

Han Su Kim, Doo Jin Choi

Research output: Contribution to journalArticle

40 Citations (Scopus)

Abstract

SiC films were chemically vapor deposited onto graphite substrates using methyltrichlorosilane (MTS, CH3SiCl3) as a source and argon or hydrogen as diluent gases to investigate the effect of each diluent gas on growth behavior and characteristics. Each diluent gas used had a relative difference in deposition rate within a certain temperature region. Such growth characteristics of the SiC films as preferred orientation, microstructure, and chemical composition varied remarkably with the diluent gas used. Microhardness and surface roughness were compared for SiC films prepared using the different diluent gases.

Original languageEnglish
Pages (from-to)331-337
Number of pages7
JournalJournal of the American Ceramic Society
Volume82
Issue number2
Publication statusPublished - 1999 Feb 1

Fingerprint

Silicon carbide
Gases
Vapors
Graphite
Argon
Deposition rates
Microhardness
Hydrogen
Surface roughness
silicon carbide
Microstructure
Substrates
Chemical analysis
Temperature

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Materials Chemistry

Cite this

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Effect of Diluent Gases on Growth Behavior and Characteristics of Chemically Vapor Deposited Silicon Carbide Films. / Kim, Han Su; Choi, Doo Jin.

In: Journal of the American Ceramic Society, Vol. 82, No. 2, 01.02.1999, p. 331-337.

Research output: Contribution to journalArticle

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