Effect of doped nitrogen on the crystallization behaviors of Ge2 Sb2 Te5

Inseok Yang; Kihoon Do; Hyun Jin Chang; Dae Hong Ko; Hyunchul Sohn

doi:10.1149/1.3321759

Effect of doped nitrogen on the crystallization behaviors of Ge₂ Sb₂ Te₅

Inseok Yang, Kihoon Do, Hyun Jin Chang, Dae Hong Ko, Hyunchul Sohn

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

The crystallization behaviors of Ge₂ Sb₂ Te ₅ and nitrogen-doped Ge₂ Sb₂ Te₅ films, deposited by dc magnetron sputtering, were investigated using the in situ resistance measurement, X-ray diffractometry, and transmission electron microscopy (TEM). The kinetic constants were estimated using the classical Johnson-Mehl-Avrami-Kolmogrov model from the resistance measurement of Ge ₂ Sb₂ Te₅ and nitrogen-doped Ge₂ Sb₂ Te₅ films. The nitrogen-doped Ge₂ Sb ₂ Te₅ showed a one-step process with the Avrami constant (n) of 1, while the Ge₂ Sb₂ Te₅ thin film showed a two-step transformation with n of 3.6 and 1. The cross-sectional TEM revealed that the crystallizations were concentrated to the regions of 20-30 nm near the top surfaces rather than occurring throughout the films of Ge ₂ Sb₂ Te₅ and nitrogen-doped Ge₂ Sb₂ Te₅ films. The annealed Ge₂ Sb₂ Te₅ showed continuous crystalline films with 20 nm grains at the surface in conjunction with the saturation of the sheet resistance, while the annealed nitrogen-doped Ge₂ Sb₂ Te₅ showed nanocrystalline phases with 5 nm grains near the surface with a continuous decrease in sheet resistance. The crystallization of nitrogen-doped Ge ₂ Sb₂ Te₅ was observed to be a nucleation-dominant process, while that of Ge₂ Sb₂ Te ₅ was a growth-dominant process.

Original language	English
Pages (from-to)	H483-H486
Journal	Journal of the Electrochemical Society
Volume	157
Issue number	4
DOIs	https://doi.org/10.1149/1.3321759
Publication status	Published - 2010

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1149/1.3321759

Cite this

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title = "Effect of doped nitrogen on the crystallization behaviors of Ge2 Sb2 Te5",

abstract = "The crystallization behaviors of Ge2 Sb2 Te 5 and nitrogen-doped Ge2 Sb2 Te5 films, deposited by dc magnetron sputtering, were investigated using the in situ resistance measurement, X-ray diffractometry, and transmission electron microscopy (TEM). The kinetic constants were estimated using the classical Johnson-Mehl-Avrami-Kolmogrov model from the resistance measurement of Ge 2 Sb2 Te5 and nitrogen-doped Ge2 Sb2 Te5 films. The nitrogen-doped Ge2 Sb 2 Te5 showed a one-step process with the Avrami constant (n) of 1, while the Ge2 Sb2 Te5 thin film showed a two-step transformation with n of 3.6 and 1. The cross-sectional TEM revealed that the crystallizations were concentrated to the regions of 20-30 nm near the top surfaces rather than occurring throughout the films of Ge 2 Sb2 Te5 and nitrogen-doped Ge2 Sb2 Te5 films. The annealed Ge2 Sb2 Te5 showed continuous crystalline films with 20 nm grains at the surface in conjunction with the saturation of the sheet resistance, while the annealed nitrogen-doped Ge2 Sb2 Te5 showed nanocrystalline phases with 5 nm grains near the surface with a continuous decrease in sheet resistance. The crystallization of nitrogen-doped Ge 2 Sb2 Te5 was observed to be a nucleation-dominant process, while that of Ge2 Sb2 Te 5 was a growth-dominant process.",

author = "Inseok Yang and Kihoon Do and Chang, {Hyun Jin} and Ko, {Dae Hong} and Hyunchul Sohn",

year = "2010",

doi = "10.1149/1.3321759",

language = "English",

volume = "157",

pages = "H483--H486",

journal = "Journal of the Electrochemical Society",

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T1 - Effect of doped nitrogen on the crystallization behaviors of Ge2 Sb2 Te5

AU - Yang, Inseok

AU - Do, Kihoon

AU - Chang, Hyun Jin

AU - Ko, Dae Hong

AU - Sohn, Hyunchul

PY - 2010

Y1 - 2010

N2 - The crystallization behaviors of Ge2 Sb2 Te 5 and nitrogen-doped Ge2 Sb2 Te5 films, deposited by dc magnetron sputtering, were investigated using the in situ resistance measurement, X-ray diffractometry, and transmission electron microscopy (TEM). The kinetic constants were estimated using the classical Johnson-Mehl-Avrami-Kolmogrov model from the resistance measurement of Ge 2 Sb2 Te5 and nitrogen-doped Ge2 Sb2 Te5 films. The nitrogen-doped Ge2 Sb 2 Te5 showed a one-step process with the Avrami constant (n) of 1, while the Ge2 Sb2 Te5 thin film showed a two-step transformation with n of 3.6 and 1. The cross-sectional TEM revealed that the crystallizations were concentrated to the regions of 20-30 nm near the top surfaces rather than occurring throughout the films of Ge 2 Sb2 Te5 and nitrogen-doped Ge2 Sb2 Te5 films. The annealed Ge2 Sb2 Te5 showed continuous crystalline films with 20 nm grains at the surface in conjunction with the saturation of the sheet resistance, while the annealed nitrogen-doped Ge2 Sb2 Te5 showed nanocrystalline phases with 5 nm grains near the surface with a continuous decrease in sheet resistance. The crystallization of nitrogen-doped Ge 2 Sb2 Te5 was observed to be a nucleation-dominant process, while that of Ge2 Sb2 Te 5 was a growth-dominant process.

AB - The crystallization behaviors of Ge2 Sb2 Te 5 and nitrogen-doped Ge2 Sb2 Te5 films, deposited by dc magnetron sputtering, were investigated using the in situ resistance measurement, X-ray diffractometry, and transmission electron microscopy (TEM). The kinetic constants were estimated using the classical Johnson-Mehl-Avrami-Kolmogrov model from the resistance measurement of Ge 2 Sb2 Te5 and nitrogen-doped Ge2 Sb2 Te5 films. The nitrogen-doped Ge2 Sb 2 Te5 showed a one-step process with the Avrami constant (n) of 1, while the Ge2 Sb2 Te5 thin film showed a two-step transformation with n of 3.6 and 1. The cross-sectional TEM revealed that the crystallizations were concentrated to the regions of 20-30 nm near the top surfaces rather than occurring throughout the films of Ge 2 Sb2 Te5 and nitrogen-doped Ge2 Sb2 Te5 films. The annealed Ge2 Sb2 Te5 showed continuous crystalline films with 20 nm grains at the surface in conjunction with the saturation of the sheet resistance, while the annealed nitrogen-doped Ge2 Sb2 Te5 showed nanocrystalline phases with 5 nm grains near the surface with a continuous decrease in sheet resistance. The crystallization of nitrogen-doped Ge 2 Sb2 Te5 was observed to be a nucleation-dominant process, while that of Ge2 Sb2 Te 5 was a growth-dominant process.

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