Effect of doping on the reliability of GaAs multiple quantum well avalanche photodiodes

Ilgu Yun, Hicham M. Menkara, Yang Wang, Ismail H. Oguzman, Jan Kolnik, Kevin F. Brennan, Gary S. May, Christopher J. Summers, Brent K. Wagner

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The effect of various doping methods on the reliability of gallium arsenide/aluminum gallium arsenide (GaAs/AlGaAs) multiple quantum well (MQW) avalanche photodiode (APD) structures fabricated by molecular beam epitaxy is investigated. Reliability is examined by accelerated life tests by monitoring dark current and breakdown voltage. Median device lifetime and the activation energy of the degradation mechanism are computed for undoped, doped-barrier, and doped-well APD structures. Lifetimes for each device structure are examined via a statistically designed experiment. Analysis of variance (ANOVA) shows that dark current is affected primarily by device diameter, temperature and stressing time, and breakdown voltage depends on the diameter, stressing time, and APD type. It is concluded that the undoped APD has the highest reliability, followed by the doped-well and doped-barrier devices, respectively. To determine the source of the degradation mechanism for each device structure, failure analysis using the electron-beam induced current method is performed. This analysis reveals some degree of device degradation caused by ionic impurities in the passivation layer, and energy-dispersive spectrometry subsequently verifies the presence of ionic sodium as the primary contaminant. However, since all device structures are similarly passivated, sodium contamination alone does not account for the observed variation between the differently doped APD's. This effect is explained by dopant migration during stressing, which is verified by free carrier concentration measurements using the capacitance-voltage (C-V) technique.

Original languageEnglish
Pages (from-to)535-544
Number of pages10
JournalIEEE Transactions on Electron Devices
Volume44
Issue number4
DOIs
Publication statusPublished - 1997 Dec 1

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Avalanche photodiodes
Semiconductor quantum wells
Doping (additives)
pamidronate
Dark currents
Electric breakdown
Degradation
Aluminum gallium arsenide
Sodium
Impurities
Gallium arsenide
Induced currents
Analysis of variance (ANOVA)
Passivation
Molecular beam epitaxy
Spectrometry
Failure analysis
Carrier concentration
Electron beams
Contamination

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Yun, I., Menkara, H. M., Wang, Y., Oguzman, I. H., Kolnik, J., Brennan, K. F., ... Wagner, B. K. (1997). Effect of doping on the reliability of GaAs multiple quantum well avalanche photodiodes. IEEE Transactions on Electron Devices, 44(4), 535-544. https://doi.org/10.1109/16.563355
Yun, Ilgu ; Menkara, Hicham M. ; Wang, Yang ; Oguzman, Ismail H. ; Kolnik, Jan ; Brennan, Kevin F. ; May, Gary S. ; Summers, Christopher J. ; Wagner, Brent K. / Effect of doping on the reliability of GaAs multiple quantum well avalanche photodiodes. In: IEEE Transactions on Electron Devices. 1997 ; Vol. 44, No. 4. pp. 535-544.
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Yun, I, Menkara, HM, Wang, Y, Oguzman, IH, Kolnik, J, Brennan, KF, May, GS, Summers, CJ & Wagner, BK 1997, 'Effect of doping on the reliability of GaAs multiple quantum well avalanche photodiodes', IEEE Transactions on Electron Devices, vol. 44, no. 4, pp. 535-544. https://doi.org/10.1109/16.563355

Effect of doping on the reliability of GaAs multiple quantum well avalanche photodiodes. / Yun, Ilgu; Menkara, Hicham M.; Wang, Yang; Oguzman, Ismail H.; Kolnik, Jan; Brennan, Kevin F.; May, Gary S.; Summers, Christopher J.; Wagner, Brent K.

In: IEEE Transactions on Electron Devices, Vol. 44, No. 4, 01.12.1997, p. 535-544.

Research output: Contribution to journalArticle

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