Effect of double substitutions of Cd and Cu on optical band gap and electrical properties of non-colloidal PbS thin films

Seung Min Lee, Deuk Ho Yeon, Sanggu Simon Chon, Yong Soo Cho

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Controllable band gap has been pursued to absorb a proper range of light by p-type absorber semiconductors for better performance photovoltaic devices. Here we introduce double substitutions with Cd and Cu for non-colloidal p-type PbS thin films to cover a broader range of optical band gap from 1.22 to 1.78 eV. Thin films of (Pb1-xCdx)1-yCuyS (x = 0-0.3 and y = 0-0.3) were grown by a single step chemical bath deposition process at a low temperature of 70 °C. The incorporation of Cd resulted in a wider band gap but changed the type of semiconductor into n-type above x = 0.2. Only the proper substitutions with both Cd and Cu induced an optimal band gap of 1.63 eV, which means a substantial improvement compared to 1.22 eV for pure PbS thin film, while maintaining p-type conductivity. Interestingly, excessive Cu substitutions beyond y = 0.2 inhibited crystallization significantly and generated an undesirably high carrier concentration.

Original languageEnglish
Pages (from-to)129-134
Number of pages6
JournalJournal of Alloys and Compounds
Volume685
DOIs
Publication statusPublished - 2016 Nov 15

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Optical band gaps
Electric properties
Energy gap
Substitution reactions
Thin films
Semiconductor materials
Crystallization
Carrier concentration
Temperature

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

Cite this

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abstract = "Controllable band gap has been pursued to absorb a proper range of light by p-type absorber semiconductors for better performance photovoltaic devices. Here we introduce double substitutions with Cd and Cu for non-colloidal p-type PbS thin films to cover a broader range of optical band gap from 1.22 to 1.78 eV. Thin films of (Pb1-xCdx)1-yCuyS (x = 0-0.3 and y = 0-0.3) were grown by a single step chemical bath deposition process at a low temperature of 70 °C. The incorporation of Cd resulted in a wider band gap but changed the type of semiconductor into n-type above x = 0.2. Only the proper substitutions with both Cd and Cu induced an optimal band gap of 1.63 eV, which means a substantial improvement compared to 1.22 eV for pure PbS thin film, while maintaining p-type conductivity. Interestingly, excessive Cu substitutions beyond y = 0.2 inhibited crystallization significantly and generated an undesirably high carrier concentration.",
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Effect of double substitutions of Cd and Cu on optical band gap and electrical properties of non-colloidal PbS thin films. / Lee, Seung Min; Yeon, Deuk Ho; Chon, Sanggu Simon; Cho, Yong Soo.

In: Journal of Alloys and Compounds, Vol. 685, 15.11.2016, p. 129-134.

Research output: Contribution to journalArticle

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