Effect of elastic anisotropy on the strain fields and band edges in stacked InAs/GaAs quantum dot nanostructures

Woong Lee, Jae Min Myoung, Yo Han Yoo, Hyunho Shin

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The effect of elastic anisotropy on the strain fields and confinement potentials in InAs/GaAs quantum dot (QD) nanostructures was investigated for an isolated dot and a stacked multi-layer dots using finite element analysis and model solid theory. The assumption of isotropy tends to underestimate especially hydrostatic strain that is known to modify confinement potentials in conduction band. Consideration of anisotropy results in a wider band gap and shallower potential well as compared with the isotropic model. Since the band gap and potential well depth would be related to opto-electronic properties of quantum dot systems via quantum mechanical effects, it is suggested that consideration of elastic anisotropy in the calculation of strains and band structures is necessary for the design of QD-based opto-electronic devices.

Original languageEnglish
Pages (from-to)135-140
Number of pages6
JournalSolid State Communications
Volume132
Issue number2
DOIs
Publication statusPublished - 2004 Oct 1

Fingerprint

elastic anisotropy
Semiconductor quantum dots
Nanostructures
Anisotropy
quantum dots
Energy gap
Conduction bands
Electronic properties
Optoelectronic devices
Band structure
isotropy
optoelectronic devices
hydrostatics
Finite element method
conduction bands
broadband
anisotropy
gallium arsenide
indium arsenide
electronics

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

@article{b8f11b18fb9d46d88e6cbe165a4ead22,
title = "Effect of elastic anisotropy on the strain fields and band edges in stacked InAs/GaAs quantum dot nanostructures",
abstract = "The effect of elastic anisotropy on the strain fields and confinement potentials in InAs/GaAs quantum dot (QD) nanostructures was investigated for an isolated dot and a stacked multi-layer dots using finite element analysis and model solid theory. The assumption of isotropy tends to underestimate especially hydrostatic strain that is known to modify confinement potentials in conduction band. Consideration of anisotropy results in a wider band gap and shallower potential well as compared with the isotropic model. Since the band gap and potential well depth would be related to opto-electronic properties of quantum dot systems via quantum mechanical effects, it is suggested that consideration of elastic anisotropy in the calculation of strains and band structures is necessary for the design of QD-based opto-electronic devices.",
author = "Woong Lee and Myoung, {Jae Min} and Yoo, {Yo Han} and Hyunho Shin",
year = "2004",
month = "10",
day = "1",
doi = "10.1016/j.ssc.2004.05.010",
language = "English",
volume = "132",
pages = "135--140",
journal = "Solid State Communications",
issn = "0038-1098",
publisher = "Elsevier Limited",
number = "2",

}

Effect of elastic anisotropy on the strain fields and band edges in stacked InAs/GaAs quantum dot nanostructures. / Lee, Woong; Myoung, Jae Min; Yoo, Yo Han; Shin, Hyunho.

In: Solid State Communications, Vol. 132, No. 2, 01.10.2004, p. 135-140.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effect of elastic anisotropy on the strain fields and band edges in stacked InAs/GaAs quantum dot nanostructures

AU - Lee, Woong

AU - Myoung, Jae Min

AU - Yoo, Yo Han

AU - Shin, Hyunho

PY - 2004/10/1

Y1 - 2004/10/1

N2 - The effect of elastic anisotropy on the strain fields and confinement potentials in InAs/GaAs quantum dot (QD) nanostructures was investigated for an isolated dot and a stacked multi-layer dots using finite element analysis and model solid theory. The assumption of isotropy tends to underestimate especially hydrostatic strain that is known to modify confinement potentials in conduction band. Consideration of anisotropy results in a wider band gap and shallower potential well as compared with the isotropic model. Since the band gap and potential well depth would be related to opto-electronic properties of quantum dot systems via quantum mechanical effects, it is suggested that consideration of elastic anisotropy in the calculation of strains and band structures is necessary for the design of QD-based opto-electronic devices.

AB - The effect of elastic anisotropy on the strain fields and confinement potentials in InAs/GaAs quantum dot (QD) nanostructures was investigated for an isolated dot and a stacked multi-layer dots using finite element analysis and model solid theory. The assumption of isotropy tends to underestimate especially hydrostatic strain that is known to modify confinement potentials in conduction band. Consideration of anisotropy results in a wider band gap and shallower potential well as compared with the isotropic model. Since the band gap and potential well depth would be related to opto-electronic properties of quantum dot systems via quantum mechanical effects, it is suggested that consideration of elastic anisotropy in the calculation of strains and band structures is necessary for the design of QD-based opto-electronic devices.

UR - http://www.scopus.com/inward/record.url?scp=4344620166&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4344620166&partnerID=8YFLogxK

U2 - 10.1016/j.ssc.2004.05.010

DO - 10.1016/j.ssc.2004.05.010

M3 - Article

AN - SCOPUS:4344620166

VL - 132

SP - 135

EP - 140

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

IS - 2

ER -