Effect of energetic electron beam treatment on Ga-doped ZnO thin films

Solbaro Kim, Changheon Kim, Chaehwan Jeong, Sangwoo Lim

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Transparent conductive zinc oxide (ZnO) thin films were synthesized by a sol-gel spin coating method with the addition of Ga(NO3)3 in a Zn(CH3COO)2 solution and exposed to electron beam treatment. The UV-Vis spectra demonstrated that all of the films had transmittances of over 85% in the visible region. When Ga(NO3) 3 was added to the ZnO precursor solution, the resistivity of the ZnO thin film decreased and the carrier concentration increased significantly. After electron beam treatment was performed on the 0.4 at.% Ga-doped ZnO film, the optical band gap increased and the resistivity significantly decreased resulting from the increases of the carrier concentration and mobility. By combining Ga doping and electron beam treatment, the resistivity of the ZnO thin film was reduced by a factor of nine hundred.

Original languageEnglish
Pages (from-to)862-867
Number of pages6
JournalCurrent Applied Physics
Volume14
Issue number6
DOIs
Publication statusPublished - 2014 Jun

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

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