Transparent conductive zinc oxide (ZnO) thin films were synthesized by a sol-gel spin coating method with the addition of Ga(NO3)3 in a Zn(CH3COO)2 solution and exposed to electron beam treatment. The UV-Vis spectra demonstrated that all of the films had transmittances of over 85% in the visible region. When Ga(NO3) 3 was added to the ZnO precursor solution, the resistivity of the ZnO thin film decreased and the carrier concentration increased significantly. After electron beam treatment was performed on the 0.4 at.% Ga-doped ZnO film, the optical band gap increased and the resistivity significantly decreased resulting from the increases of the carrier concentration and mobility. By combining Ga doping and electron beam treatment, the resistivity of the ZnO thin film was reduced by a factor of nine hundred.
Bibliographical noteFunding Information:
This work was supported by the New & Renewable Energy Technology Development Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea government Ministry of Trade, Industry & Energy (NO. 20113020010010 ). This work was also supported by the Priority Research Centers Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology ( 2009-0093823 ).
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Physics and Astronomy(all)