The effect of excess Pb and O content on the ferroelectric properties of Pb(Zr0.52Ti0.48)O3/Pt system has been investigated. PZT films were sputter-deposited from a target containing 50% excess Pb and O on a substrate heated at 520°C. This permitted the PZT films to be crystallized directly to a perovskite phase. The excess content of Pb and O in the sputter-deposited PZT films were controlled by successive furnace-annealing at 500°C by varying the annealing time. Polarization-switching field (P-E), current-applying electric field (I-E), and fatigue property measurements were done after rapid thermal annealing (RTA) of the films at 600 and 700°C. The 700°C-treated PZT film containing 26% of excess Pb before RTA showed better ferroelectric properties than the 600°C-treated film. On the contrary, a degradation of ferroelectric properties was observed with the 700°C-treated films containing 17 or 5% of excess Pb before RTA. These two opposed effects of high temperature-RTA treatment on the ferroelectric properties of the PZT films could be explained using a space charge model.
Bibliographical noteFunding Information:
This study was supported by the Ministry of Education of Korea through the Research Fund for Advanced Materials in 1997–1998.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry