Effect of excess Pb and O content on the ferroelectric properties of sputter deposited Pb(Zr0.52Ti0.48)O3/Pt system

Hyung-Ho Park, Il Sup Jin, Do Hyun Kim, Tae Song Kim

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The effect of excess Pb and O content on the ferroelectric properties of Pb(Zr0.52Ti0.48)O3/Pt system has been investigated. PZT films were sputter-deposited from a target containing 50% excess Pb and O on a substrate heated at 520°C. This permitted the PZT films to be crystallized directly to a perovskite phase. The excess content of Pb and O in the sputter-deposited PZT films were controlled by successive furnace-annealing at 500°C by varying the annealing time. Polarization-switching field (P-E), current-applying electric field (I-E), and fatigue property measurements were done after rapid thermal annealing (RTA) of the films at 600 and 700°C. The 700°C-treated PZT film containing 26% of excess Pb before RTA showed better ferroelectric properties than the 600°C-treated film. On the contrary, a degradation of ferroelectric properties was observed with the 700°C-treated films containing 17 or 5% of excess Pb before RTA. These two opposed effects of high temperature-RTA treatment on the ferroelectric properties of the PZT films could be explained using a space charge model.

Original languageEnglish
Pages (from-to)300-304
Number of pages5
JournalThin Solid Films
Volume332
Issue number1-2
DOIs
Publication statusPublished - 1998 Nov 2

Fingerprint

Ferroelectric materials
Rapid thermal annealing
annealing
Annealing
Electric space charge
Perovskite
furnaces
space charge
Furnaces
Electric fields
Fatigue of materials
Polarization
degradation
Degradation
electric fields
Substrates
polarization

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

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title = "Effect of excess Pb and O content on the ferroelectric properties of sputter deposited Pb(Zr0.52Ti0.48)O3/Pt system",
abstract = "The effect of excess Pb and O content on the ferroelectric properties of Pb(Zr0.52Ti0.48)O3/Pt system has been investigated. PZT films were sputter-deposited from a target containing 50{\%} excess Pb and O on a substrate heated at 520°C. This permitted the PZT films to be crystallized directly to a perovskite phase. The excess content of Pb and O in the sputter-deposited PZT films were controlled by successive furnace-annealing at 500°C by varying the annealing time. Polarization-switching field (P-E), current-applying electric field (I-E), and fatigue property measurements were done after rapid thermal annealing (RTA) of the films at 600 and 700°C. The 700°C-treated PZT film containing 26{\%} of excess Pb before RTA showed better ferroelectric properties than the 600°C-treated film. On the contrary, a degradation of ferroelectric properties was observed with the 700°C-treated films containing 17 or 5{\%} of excess Pb before RTA. These two opposed effects of high temperature-RTA treatment on the ferroelectric properties of the PZT films could be explained using a space charge model.",
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Effect of excess Pb and O content on the ferroelectric properties of sputter deposited Pb(Zr0.52Ti0.48)O3/Pt system. / Park, Hyung-Ho; Jin, Il Sup; Kim, Do Hyun; Kim, Tae Song.

In: Thin Solid Films, Vol. 332, No. 1-2, 02.11.1998, p. 300-304.

Research output: Contribution to journalArticle

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AB - The effect of excess Pb and O content on the ferroelectric properties of Pb(Zr0.52Ti0.48)O3/Pt system has been investigated. PZT films were sputter-deposited from a target containing 50% excess Pb and O on a substrate heated at 520°C. This permitted the PZT films to be crystallized directly to a perovskite phase. The excess content of Pb and O in the sputter-deposited PZT films were controlled by successive furnace-annealing at 500°C by varying the annealing time. Polarization-switching field (P-E), current-applying electric field (I-E), and fatigue property measurements were done after rapid thermal annealing (RTA) of the films at 600 and 700°C. The 700°C-treated PZT film containing 26% of excess Pb before RTA showed better ferroelectric properties than the 600°C-treated film. On the contrary, a degradation of ferroelectric properties was observed with the 700°C-treated films containing 17 or 5% of excess Pb before RTA. These two opposed effects of high temperature-RTA treatment on the ferroelectric properties of the PZT films could be explained using a space charge model.

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