Effect of excess Pb and O content on the ferroelectric properties of sputter deposited Pb(Zr0.52Ti0.48)O3/Pt system

Hyung Ho Park; Il Sup Jin; Do Hyun Kim; Tae Song Kim

doi:10.1016/S0040-6090(98)01265-6

Effect of excess Pb and O content on the ferroelectric properties of sputter deposited Pb(Zr_0.52Ti_0.48)O₃/Pt system

Hyung Ho Park, Il Sup Jin, Do Hyun Kim, Tae Song Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

The effect of excess Pb and O content on the ferroelectric properties of Pb(Zr_0.52Ti_0.48)O₃/Pt system has been investigated. PZT films were sputter-deposited from a target containing 50% excess Pb and O on a substrate heated at 520°C. This permitted the PZT films to be crystallized directly to a perovskite phase. The excess content of Pb and O in the sputter-deposited PZT films were controlled by successive furnace-annealing at 500°C by varying the annealing time. Polarization-switching field (P-E), current-applying electric field (I-E), and fatigue property measurements were done after rapid thermal annealing (RTA) of the films at 600 and 700°C. The 700°C-treated PZT film containing 26% of excess Pb before RTA showed better ferroelectric properties than the 600°C-treated film. On the contrary, a degradation of ferroelectric properties was observed with the 700°C-treated films containing 17 or 5% of excess Pb before RTA. These two opposed effects of high temperature-RTA treatment on the ferroelectric properties of the PZT films could be explained using a space charge model.

Original language	English
Pages (from-to)	300-304
Number of pages	5
Journal	Thin Solid Films
Volume	332
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(98)01265-6
Publication status	Published - 1998 Nov 2

Bibliographical note

Funding Information:
This study was supported by the Ministry of Education of Korea through the Research Fund for Advanced Materials in 1997–1998.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/S0040-6090(98)01265-6

Cite this

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title = "Effect of excess Pb and O content on the ferroelectric properties of sputter deposited Pb(Zr0.52Ti0.48)O3/Pt system",

abstract = "The effect of excess Pb and O content on the ferroelectric properties of Pb(Zr0.52Ti0.48)O3/Pt system has been investigated. PZT films were sputter-deposited from a target containing 50% excess Pb and O on a substrate heated at 520°C. This permitted the PZT films to be crystallized directly to a perovskite phase. The excess content of Pb and O in the sputter-deposited PZT films were controlled by successive furnace-annealing at 500°C by varying the annealing time. Polarization-switching field (P-E), current-applying electric field (I-E), and fatigue property measurements were done after rapid thermal annealing (RTA) of the films at 600 and 700°C. The 700°C-treated PZT film containing 26% of excess Pb before RTA showed better ferroelectric properties than the 600°C-treated film. On the contrary, a degradation of ferroelectric properties was observed with the 700°C-treated films containing 17 or 5% of excess Pb before RTA. These two opposed effects of high temperature-RTA treatment on the ferroelectric properties of the PZT films could be explained using a space charge model.",

author = "Park, {Hyung Ho} and Jin, {Il Sup} and Kim, {Do Hyun} and Kim, {Tae Song}",

note = "Funding Information: This study was supported by the Ministry of Education of Korea through the Research Fund for Advanced Materials in 1997–1998.",

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T1 - Effect of excess Pb and O content on the ferroelectric properties of sputter deposited Pb(Zr0.52Ti0.48)O3/Pt system

AU - Park, Hyung Ho

AU - Jin, Il Sup

AU - Kim, Do Hyun

AU - Kim, Tae Song

N1 - Funding Information: This study was supported by the Ministry of Education of Korea through the Research Fund for Advanced Materials in 1997–1998.

PY - 1998/11/2

Y1 - 1998/11/2

N2 - The effect of excess Pb and O content on the ferroelectric properties of Pb(Zr0.52Ti0.48)O3/Pt system has been investigated. PZT films were sputter-deposited from a target containing 50% excess Pb and O on a substrate heated at 520°C. This permitted the PZT films to be crystallized directly to a perovskite phase. The excess content of Pb and O in the sputter-deposited PZT films were controlled by successive furnace-annealing at 500°C by varying the annealing time. Polarization-switching field (P-E), current-applying electric field (I-E), and fatigue property measurements were done after rapid thermal annealing (RTA) of the films at 600 and 700°C. The 700°C-treated PZT film containing 26% of excess Pb before RTA showed better ferroelectric properties than the 600°C-treated film. On the contrary, a degradation of ferroelectric properties was observed with the 700°C-treated films containing 17 or 5% of excess Pb before RTA. These two opposed effects of high temperature-RTA treatment on the ferroelectric properties of the PZT films could be explained using a space charge model.

AB - The effect of excess Pb and O content on the ferroelectric properties of Pb(Zr0.52Ti0.48)O3/Pt system has been investigated. PZT films were sputter-deposited from a target containing 50% excess Pb and O on a substrate heated at 520°C. This permitted the PZT films to be crystallized directly to a perovskite phase. The excess content of Pb and O in the sputter-deposited PZT films were controlled by successive furnace-annealing at 500°C by varying the annealing time. Polarization-switching field (P-E), current-applying electric field (I-E), and fatigue property measurements were done after rapid thermal annealing (RTA) of the films at 600 and 700°C. The 700°C-treated PZT film containing 26% of excess Pb before RTA showed better ferroelectric properties than the 600°C-treated film. On the contrary, a degradation of ferroelectric properties was observed with the 700°C-treated films containing 17 or 5% of excess Pb before RTA. These two opposed effects of high temperature-RTA treatment on the ferroelectric properties of the PZT films could be explained using a space charge model.

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