Effect of excimer laser annealing on the performance of amorphous indium gallium zinc oxide thin-film transistors

Byung Du Ahn; Woong Hee Jeong; Hyun Soo Shin; Dong Lim Kim; Hyun Jae Kim; Jae Kyeong Jeong; Sung Hwan Choi; Min Koo Han

doi:10.1149/1.3231132

Effect of excimer laser annealing on the performance of amorphous indium gallium zinc oxide thin-film transistors

Byung Du Ahn, Woong Hee Jeong, Hyun Soo Shin, Dong Lim Kim, Hyun Jae Kim, Jae Kyeong Jeong, Sung Hwan Choi, Min Koo Han

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

This article reports a method for reducing the contact resistance between amorphous-InGaZnO (a-IGZO) channel and source/drain layer via XeCl excimer laser annealing (ELA) and the device performance of a-IGZO thin-film transistors (TFTs) in terms of laser energy density. The source/drain region in the a-IGZO layer was selectively ELA-treated using a mask, and the resistivity dramatically reduced compared to that of the untreated film (from 10⁴ to 10 ^-3 ω cm). Our TFTs had a field-effect mobility of 21.7 cm ²/V s, an on/off ratio of 1.2× 10⁸, a threshold voltage of -0.15 V, and a subthreshold swing of 0.26 V/decade.

Original language	English
Pages (from-to)	H430-H432
Journal	Electrochemical and Solid-State Letters
Volume	12
Issue number	12
DOIs	https://doi.org/10.1149/1.3231132
Publication status	Published - 2009

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/1.3231132

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title = "Effect of excimer laser annealing on the performance of amorphous indium gallium zinc oxide thin-film transistors",

abstract = "This article reports a method for reducing the contact resistance between amorphous-InGaZnO (a-IGZO) channel and source/drain layer via XeCl excimer laser annealing (ELA) and the device performance of a-IGZO thin-film transistors (TFTs) in terms of laser energy density. The source/drain region in the a-IGZO layer was selectively ELA-treated using a mask, and the resistivity dramatically reduced compared to that of the untreated film (from 104 to 10 -3 ω cm). Our TFTs had a field-effect mobility of 21.7 cm 2/V s, an on/off ratio of 1.2× 108, a threshold voltage of -0.15 V, and a subthreshold swing of 0.26 V/decade.",

author = "Ahn, {Byung Du} and Jeong, {Woong Hee} and Shin, {Hyun Soo} and Kim, {Dong Lim} and Kim, {Hyun Jae} and Jeong, {Jae Kyeong} and Choi, {Sung Hwan} and Han, {Min Koo}",

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T1 - Effect of excimer laser annealing on the performance of amorphous indium gallium zinc oxide thin-film transistors

AU - Ahn, Byung Du

AU - Jeong, Woong Hee

AU - Shin, Hyun Soo

AU - Kim, Dong Lim

AU - Kim, Hyun Jae

AU - Jeong, Jae Kyeong

AU - Choi, Sung Hwan

AU - Han, Min Koo

PY - 2009

Y1 - 2009

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AB - This article reports a method for reducing the contact resistance between amorphous-InGaZnO (a-IGZO) channel and source/drain layer via XeCl excimer laser annealing (ELA) and the device performance of a-IGZO thin-film transistors (TFTs) in terms of laser energy density. The source/drain region in the a-IGZO layer was selectively ELA-treated using a mask, and the resistivity dramatically reduced compared to that of the untreated film (from 104 to 10 -3 ω cm). Our TFTs had a field-effect mobility of 21.7 cm 2/V s, an on/off ratio of 1.2× 108, a threshold voltage of -0.15 V, and a subthreshold swing of 0.26 V/decade.

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Effect of excimer laser annealing on the performance of amorphous indium gallium zinc oxide thin-film transistors

Abstract

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