Effect of excimer laser annealing on the performance of amorphous indium gallium zinc oxide thin-film transistors

Byung Du Ahn, Woong Hee Jeong, Hyun Soo Shin, Dong Lim Kim, Hyun Jae Kim, Jae Kyeong Jeong, Sung Hwan Choi, Min Koo Han

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

This article reports a method for reducing the contact resistance between amorphous-InGaZnO (a-IGZO) channel and source/drain layer via XeCl excimer laser annealing (ELA) and the device performance of a-IGZO thin-film transistors (TFTs) in terms of laser energy density. The source/drain region in the a-IGZO layer was selectively ELA-treated using a mask, and the resistivity dramatically reduced compared to that of the untreated film (from 104 to 10 -3 ω cm). Our TFTs had a field-effect mobility of 21.7 cm 2/V s, an on/off ratio of 1.2× 108, a threshold voltage of -0.15 V, and a subthreshold swing of 0.26 V/decade.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume12
Issue number12
DOIs
Publication statusPublished - 2009 Oct 22

Fingerprint

Zinc Oxide
gallium oxides
Gallium
Indium
laser annealing
Excimer lasers
Thin film transistors
Zinc oxide
zinc oxides
excimer lasers
Oxide films
indium
transistors
Annealing
Amorphous films
Contact resistance
thin films
contact resistance
Threshold voltage
threshold voltage

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrical and Electronic Engineering
  • Electrochemistry

Cite this

Ahn, Byung Du ; Jeong, Woong Hee ; Shin, Hyun Soo ; Kim, Dong Lim ; Kim, Hyun Jae ; Jeong, Jae Kyeong ; Choi, Sung Hwan ; Han, Min Koo. / Effect of excimer laser annealing on the performance of amorphous indium gallium zinc oxide thin-film transistors. In: Electrochemical and Solid-State Letters. 2009 ; Vol. 12, No. 12.
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Effect of excimer laser annealing on the performance of amorphous indium gallium zinc oxide thin-film transistors. / Ahn, Byung Du; Jeong, Woong Hee; Shin, Hyun Soo; Kim, Dong Lim; Kim, Hyun Jae; Jeong, Jae Kyeong; Choi, Sung Hwan; Han, Min Koo.

In: Electrochemical and Solid-State Letters, Vol. 12, No. 12, 22.10.2009.

Research output: Contribution to journalArticle

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T1 - Effect of excimer laser annealing on the performance of amorphous indium gallium zinc oxide thin-film transistors

AU - Ahn, Byung Du

AU - Jeong, Woong Hee

AU - Shin, Hyun Soo

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AU - Kim, Hyun Jae

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AU - Choi, Sung Hwan

AU - Han, Min Koo

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