Effect of excimer laser annealing on the performance of amorphous indium gallium zinc oxide thin-film transistors

Byung Du Ahn, Woong Hee Jeong, Hyun Soo Shin, Dong Lim Kim, Hyun Jae Kim, Jae Kyeong Jeong, Sung Hwan Choi, Min Koo Han

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21 Citations (Scopus)


This article reports a method for reducing the contact resistance between amorphous-InGaZnO (a-IGZO) channel and source/drain layer via XeCl excimer laser annealing (ELA) and the device performance of a-IGZO thin-film transistors (TFTs) in terms of laser energy density. The source/drain region in the a-IGZO layer was selectively ELA-treated using a mask, and the resistivity dramatically reduced compared to that of the untreated film (from 104 to 10 -3 ω cm). Our TFTs had a field-effect mobility of 21.7 cm 2/V s, an on/off ratio of 1.2× 108, a threshold voltage of -0.15 V, and a subthreshold swing of 0.26 V/decade.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Issue number12
Publication statusPublished - 2009 Oct 22


All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrical and Electronic Engineering
  • Electrochemistry

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