This article reports a method for reducing the contact resistance between amorphous-InGaZnO (a-IGZO) channel and source/drain layer via XeCl excimer laser annealing (ELA) and the device performance of a-IGZO thin-film transistors (TFTs) in terms of laser energy density. The source/drain region in the a-IGZO layer was selectively ELA-treated using a mask, and the resistivity dramatically reduced compared to that of the untreated film (from 104 to 10 -3 ω cm). Our TFTs had a field-effect mobility of 21.7 cm 2/V s, an on/off ratio of 1.2× 108, a threshold voltage of -0.15 V, and a subthreshold swing of 0.26 V/decade.
|Journal||Electrochemical and Solid-State Letters|
|Publication status||Published - 2009|
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering